DSA80C100PB Schottky Diode Gen VRRM = 100 V I FAV = 2x 40 A VF = 0.8 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA80C100PB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-220 Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a DSA80C100PB Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 100 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 100 V IR reverse current, drain current VR = 100 V TVJ = 25C 680 A VR = 100 V TVJ = 125C 7 mA TVJ = 25C 0.97 V 1.19 V 0.80 V VF IF = forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. 40 A IF = 80 A IF = 40 A IF = 80 A TVJ = 125 C TC = 150C rectangular 1.05 V T VJ = 175 C 40 A TVJ = 175 C 0.45 V d = 0.5 for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = TVJ = 25C IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved typ. 6.5 m 0.6 K/W K/W 0.50 TC = 25C 12 V f = 1 MHz 250 490 406 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20131031a DSA80C100PB Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 C -55 150 C 150 C 1) Weight 2 MD mounting torque FC mounting force with clip Product Marking Part Number 0.4 0.6 Nm 20 60 N Part number D S A 80 C 100 PB XXXXXX Logo Assembly Line Lot # g = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-220AB (3) Zyyww abcdef Date Code Ordering Standard Part Number DSA80C100PB Similar Part DSA70C100HB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA80C100PB Package TO-247AD (3) * on die level Delivery Mode Tube Code No. 502795 Voltage class 100 T VJ = 175 C Schottky V 0 max threshold voltage 0.45 V R 0 max slope resistance * 3.3 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a DSA80C100PB Outlines TO-220 Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 OP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A A1 OP H1 Q E D 4 3 L 3x b2 2 L1 1 3x b C 2x e A2 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a DSA80C100PB Schottky 80 1200 100 TVJ = 150C TVJ = 125C TVJ = 25C 60 TVJ = 25C 1000 175C 10 150C IR IF 100C 40 [A] 0.1 [A] 75C 50C 20 0.8 1.2 20 40 60 80 100 120 VR [V] VF [V] 0 20 40 60 80 100 VF [V] Fig. 2 Typ. value of rev. current IR vs. reverse voltage VR 40 400 0 0 Fig. 1 Max. forward voltage drop characteristics 600 [pF] 200 0.001 0.4 CJ 25C 0.01 0 0.0 800 125C 1 Fig. 3 Typ. junction capacitance CJ vs. reverse voltage VR 25 D = 0.5 DC 20 30 IDAVM Ptot 15 20 [W] [A] D= DC 0.5 0.33 0.25 0.17 0.08 10 10 5 0 0 0 40 80 120 160 200 0 TC [C] 5 10 15 20 25 30 35 IFAV [A] Fig. 5 Forward power loss characteristics Fig. 4 Average forward current IF(AV) vs. case temp. TC 0.6 RthJC 0.4 [K/W] 0.2 Note: All curves are per diode 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a