DSA80C100PB
Low Loss and Soft Recovery
High Performance Schottky Diode
Common Cathode
Schottky Diode Gen ²
1 2 3
Part number
DSA80C100PB
Backside: cathode
FAV
F
VV0.8
RRM
40
100
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
TO-220
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA80C100PB
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
0.97
R0.6 K/
W
R
min.
40
V
RSM
V
680T = 25°C
VJ
T = °C
VJ
m
A
7V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
150
P
tot
250
W
T = 25°C
C
RK/
W
40
100
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
1.19
T = 25°C
VJ
125
V
F0
V
0.45T = °C
VJ
175
r
F
6.5 m
Ω
V
0.80T = °C
VJ
I = A
F
V
40
1.05
I = A
F
80
I = A
F
80
threshold voltage
slope resistance for power loss calculation only
µ
A
125
V
RRM
V
100
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
406
j
unction capacitance V = V12 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
490
A
100
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
100
0.50
IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA80C100PB
Ratings
XXXXXX
Zyyww
Logo
Part Number
Date Code
Lot #
abcdef
Product Markin
g
A
ssembly Line
D
S
A
80
C
100
PB
Part number
Diode
Schottky Diode
low VF
Common Cathode
TO-220AB (3)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm0.6
mounting torque 0.4
T
VJ
°C175
virt ua l j un ctio n temp eratu re -55
Weight g2
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N60
mount ing for ce w i th cli p 20
I
RMS
RMS current 35 A
per terminal
150-55
TO-220
Similar Part Package Voltage class
DSA70C100HB TO-247AD (3) 100
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
DSA80C100PB 502795Tube 50DSA80C100PBStandard
T
stg
°C150
storage temperature -55
threshold voltage V0.45
mΩ
V
0 max
R
0 max
slope resistance * 3.3
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Schottky
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA80C100PB
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 2.54 BSC 0.100 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
ØP 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125
3x b2
E
ØP
Q
D
L1
L
3x b 2x e C
A2
H1
A1
A
123
4
1 2 3
Outlines TO-220
IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA80C100PB
0 20 40 60 80 100 120
0.001
0.01
0.1
1
10
100
20 60 100
04080
0
200
400
600
800
1000
1200
0.0 0.4 0.8 1.2
0
20
40
60
80
C
J
[pF]
I
R
[A]
I
F
[A]
VF[V] V
R
[V] VF[V]
t[ms]
R
thJC
[K/W]
0 5 10 15 20 25 30 35
0
5
10
15
20
25
1 10 100 1000 10000
0.2
0.4
0.6
P
tot
[W]
I
FAV
[A]
0 40 80 120 160 200
0
10
20
30
40
I
DAVM
[A]
T
C
[°C]
DC
D = 0.5
Fig. 1 Max. forward voltage
drop characteristics
Fig. 2 Typ. value of rev. current
I
R
vs. reverse voltage V
R
Fig. 3 Typ. junction capacitance
C
J
vs. reverse voltage V
R
Fig. 4 Average forward current
I
F(AV)
vs.casetemp.T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
150°C
125°C
75°C
50°C
25°C
T
VJ
= 150°C
T
VJ
= 125°C
T
VJ
= 25°C 175°C
100°C
T
VJ
=25°C
D =
DC
0.5
0.33
0.25
0.17
0.08
Schottky
IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
