© Semiconductor Components Industries, LLC, 2017
January, 2020 − Rev. 2
1Publication Order Number:
FFSP05120A/D
Silicon Carbide Schottky
Diode
1200 V, 5 A
FFSP05120A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Features
•Max Junction Temperature 175°C
•Avalanche Rated 55 mJ
•High Surge Current Capacity
•Positive Temperature Coefficient
•Ease of Paralleling
•No Reverse Recovery/No Forward Recovery
•This Device is Pb−Free, Halogen Free/BFR Free and RoHS
Compliant
Applications
•General Purpose
•SMPS, Solar Inverter, UPS
•Power Switching Circuits
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TO−220−2LD
CASE 340BB
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
Schottky Diode
MARKING DIAGRAM
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FFSP05120A = Specific Device Code
2. Anode1. Cathode
$Y&Z&3&K
FFSP
05120A
12
FFSP05120A
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2
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol Parameter Value Unit
VRRM Peak Repetitive Reverse Voltage 1200 V
EAS Single Pulse Avalanche Energy (Note 1) 55 mJ
IFContinuous Rectified Forward Current @ TC < 160°C 5 A
Continuous Rectified Forward Current @ TC < 135°C 9.2 A
IF,Max Non-Repetitive Peak Forward Surge Current TC = 25°C, 10 ms380 A
TC = 150°C, 10 ms330 A
IF,SM Non-Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 42 A
IF,RM Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 21 A
PTOT Power Dissipation TC = 25°C 94 W
TC = 150°C 16 W
TJ, TSTG Operating and Storage Temperature Range −55 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. EAS of 55 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 15 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
RqJC Thermal Resistance, Junction to Case, Max 1.6 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Test Condition Min Typ Max Unit
VFForward Voltage IF = 5 A, TC = 25°C−1.45 1.75 V
IF = 5 A, TC = 125°C−1.7 2.0
IF = 5 A, TC = 175°C−2.0 2.4
IRReverse Current VR = 1200 V, TC = 25°C− − 200 mA
VR = 1200 V, TC = 125°C− − 300
VR = 1200 V, TC = 175°C− − 400
QCTotal Capacitive Charge V = 800 V −37 −nC
CTotal Capacitance VR = 1 V, f = 100 kHz −337 −pF
VR = 400 V, f = 100 kHz −33 −
VR = 800 V, f = 100 kHz −26 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number Top Marking Package Packing Method Quantity
FFSP05120A FFSP05120A TO−220−2LD Tube 50 Units
FFSP05120A
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3
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7 D = 1
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
Figure 3. Current Derating Figure 4. Power Derating
Figure 5. Capacitive Charge vs. Reverse
Voltage
VF
, Forward Voltage (V)
0.0 0.5 1.0 3.0
0
10
TJ = −55°C
TJ = 25°C
TJ = 75°C
TJ = 125°C
TJ = 175°C
VR, Reverse Voltage (V)
IR, Reverse Current (mA)
200 600 800 1000
10−3
10−2
10−1
101
1200
TJ = −55°C
TJ = 25°C
TJ = 75°C
TJ = 125°CTJ = 175°C
TC, Case Temperature (5C)
25
0
20
60
100
50 75 100 125 150 175
TC, Case Temperature (5C)
25
0
20
40
60
50 75 100 125 150 175
VR, Reverse Voltage (V)
0
0
QC, Capacitive Charge (nC)
200 600
10
20
4
IF
, Peak Forward Current (A)
100
30
50
1.5
IF
, Forward Current (A)
Figure 6. Capacitance vs. Reverse Voltage
VR, Reverse Voltage (V)
0.1
10
1 10 100 1000
Capacitance (pF)
100
1000
2
1000
100
PTOT
, Power Dissipation (W)
80 80
40
400 800
4002.0 2.5
8
6
40
FFSP05120A
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4
TYPICAL CHARACTERISTICS (Continued)
(TJ = 25°C unless otherwise noted)
DUTY CIRCLE−DESCENDING ORDER
SINGLE PULSE
0.01
0.02
0.05
0.1 0.2
0.5
PDM
t1
t2
Figure 7. Capacitance Stored Energy
Figure 8. Junction−to−Case Transient Thermal Response Curve
VR, Reverse Voltage (V)
0
0
400 800
5
EC, Capacitive Energy (mJ)
t, Rectangular Pulse Duration (s)
ZqJC, Normalized Thermal
Impedance
1
2
10−310−11
15
NOTES:
ZqJC(t) = r(t) × RqJC
RqJC = 1.6°C/W
Peak TJ = PDM × ZqJC(t) + TC
Duty Cycle, D = t1 / t2
0.01
0.001
10−610−2
200 600 1000
10
10−4
10−5
0.1
TEST CIRCUIT AND WAVEFORMS
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
LR
+
−
DUT
CURRENT
SENSE VDD
VDD
Q1
IV
VAVL
tt0t1t2
IL
IL
L = 0.5 mH
R < 0.1 W
VDD = 50 V
EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
TO−220−2LD
CASE 340BB
ISSUE O
DATE 31 AUG 2016
5°
3°
5°
3°
4.80
4.30
10.67
9.65
4.09
3.50
3.43
2.54
9.40
8.38
2.54
5.08
16.51
14.22
14.73
13.60
1.02
0.38
6.35 MAX
1.65
1.25
1.91
0.36 MBAM
0.36 MCAB
A
C
1.40
0.51
7°
3°
6.86
5.84
2.92
2.03
0.61
0.33
5°
3°
5°
3°
B
13.40
12.19
8.89
6.86
0.60 MAX
16.15
15.75
NOTES:
A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K,
VARIATION AC,DATED APRIL 2002.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−2009.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
1 2
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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TO−220−2LD
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