SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 FEBRUARY 1996 ✪
FEATURES
* Suitable for AF drivers and output stages
* High collector current and Low VCE(sat)
COMPLEMENTARY TYPE BCP69
PARTMARKING DETAIL BCP68
BCP68 25
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 25 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 2A
Continuous Collector Current IC1A
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature
Range
Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 25 V IC=10µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 20 V IC= 30mA *
Emitter-Base
Breakdown Voltage
V(BR)EBO 5V
IE=10µA
Collector Cut-Off
Current
ICBO 100
10
nA
µA
VCB
=25V
VCB
=25V, Tamb
=150°C
Emitter Cut-Off Current IEBO 10 µAVEB
=5V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.5 V IC=1A, IB=100mA*
Base-Emitter Turn-On
Voltage
VBE(on) 0.6
1.0
V
V
IC=5A, VCE
=10V*
IC=1A, VCE
=1V*
Static Forward Current
Transfer Ratio
hFE
BCP68
BCP68-25
50
63
160 250
400
400
IC=5mA, VCE
=10V*
IC=500mA, VCE
=1V*
IC=500mA, VCE
=1V*
Transition Frequency fT100 MHz IC=100mA, VCE
=5V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT449 datasheet.
BCP68
C
C
E
B
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