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DATA SH EET
Product data sheet 2003 Sep 29
DISCRETE SEMICONDUCTORS
PBSS4230T
30 V, 2 A
NPN low VCEsat (BISS) transistor
M3D08
8
2003 Sep 29 2
NXP Semiconductors Product data sheet
30 V, 2 A
NPN low VCEsat (BISS) transistor PBSS4230T
FEATURES
Low collector-emitter saturation volt age VCEsat
High collector current capability IC and ICM
High efficiency leading to less heat generation
Reduced printed-circuit bo ard requirements
Cost effective alternative to MOSFETs in specific
applications.
APPLICATIONS
Power management
DC/DC conversion
Supply line switching
Battery charger
LCD backlighting.
Peripheral driver
Driver in low su pply voltage applications (e.g. lamps
and LEDs)
Inductive load drive rs (e.g. relays, buzzers an d
motors).
DESCRIPTION
NPN BISS transistor in a SOT23 plastic package providing
ultra low VCEsat an d RCEsat parame ter s.
PNP complement: PBSS5230T.
MARKING
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE(1)
PBSS4230T *3D
SYMBOL PARAMETER MAX. UNIT
VCEO collector-emitter voltage 30 V
ICcollector current (DC) 2 A
ICM peak collector current 3 A
RCEsat equivalent on-resistance 200 mΩ
PIN DESCRIPTION
1base
2emitter
3collector
handbook, halfpage
21
3
MAM255
Top view
2
3
1
Fig.1 Simplified outline (SOT23 ) and symbo l .
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
PBSS4230T plastic surface mounted package; 3 leads SOT23
2003 Sep 29 3
NXP Semiconductors Pr oduct data shee t
30 V, 2 A
NPN low VCEsat (BISS) transistor PBSS4230T
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
Notes
1. Device mounted o n a FR4 printed-circuit board, single-sided copper, ti np la ted, standard footpr int.
2. Device mounted on a FR4 printed-circuit board, single-sided coppe r, tin plate d, mounting pad for collector 1 cm2.
THERMAL CHARACTE RISTICS
Notes
1. Device mounted o n a FR4 printed-circuit board, single-sided copper, ti np la ted, standard footpr int.
2. Device mounted on a FR4 printed-circuit board, single-sided coppe r, tin plate d, mounting pad for collector 1 cm2.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter 40 V
VCEO collector-emitter voltage open base 30 V
VEBO emitter-base voltage open collector 5 V
ICcollector current (DC) 2 A
ICM peak collector current 3 A
IBM peak base current 300 mA
Ptot total power dissipation Tamb 25 °C; note 1 300 mW
Tamb 25 °C; note 2 480 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient in free air; note 1 417 K/W
in free air; note 2 260 K/W
2003 Sep 29 4
NXP Semiconductors Pr oduct data shee t
30 V, 2 A
NPN low VCEsat (BISS) transistor PBSS4230T
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp 300 μs; δ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB = 30 V; IE = 0 −−100 nA
VCB = 30 V; IE = 0; Tj = 150 °C−−50 μA
IEBO emitter-base cu t-off current VEB = 4 V; IC = 0 −−100 nA
hFE DC current gain VCE = 2 V; IC = 100 mA 350 470
VCE = 2 V; IC = 500 mA 300 450
VCE = 2 V; IC = 1 A 300 420
VCE = 2 V; IC = 2 A 150 250
VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA 45 70 mV
IC = 500 mA; IB = 50 mA 70 100 mV
IC = 750 mA; IB = 15 mA 120 180 mV
IC = 1 A; IB = 50 mA; note 1 130 180 mV
IC = 2 A; IB = 200 mA; note 1 240 320 mV
RCEsat equivalent on-resistance IC = 500 mA; IB = 50 mA; note 1 140 200 mΩ
VBEsat base-emitt er saturation voltage IC = 2 A; IB = 200 mA; note 1 −−1.1 V
VBEon base-emitter turn-on voltage VCE = 2 V; IC = 100 mA −−0.75 V
fTtransition frequen c y IC = 100 mA; VCE = 10 V;
f = 100 MHz 100 230 MHz
Cccollector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz 15 20 pF
2003 Sep 29 5
NXP Semiconductors Pr oduct data shee t
30 V, 2 A
NPN low VCEsat (BISS) transistor PBSS4230T
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT2
3
2003 Sep 29 6
NXP Semiconductors Pr oduct data shee t
30 V, 2 A
NPN low VCEsat (BISS) transistor PBSS4230T
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document co ntains data from the objective s pecification for produc t
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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regulations. Export might require a prior authorization from
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document d oes not form part o f an y quotation or cont ra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands R75/01/pp7 Date of release: 2003 Sep 29 Document orde r number: 9397 750 11898