UG2A thru UG2D Vishay General Semiconductor Miniature Ultrafast Plastic Rectifier FEATURES * Glass passivated chip junction * Ultrafast reverse recovery time * Soft recovery characteristics * Low forward voltage drop * Low switching losses, high efficiency * High forward surge capability DO-204AC (DO-15) * Solder dip 275 C max. 10 s, per JESD 22-B106 * Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 50 V to 200 V IFSM 80 A trr 15 ns VF 0.95 V TJ max. 150 C For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. MECHANICAL DATA Case: DO-204AC (DO-15) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL UG2A UG2B UG2C UG2D UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V Maximum RMS voltage VRMS 35 70 105 140 V Maximum DC blocking voltage VDC 50 100 150 200 V Maximum average forward rectified current at 0.375" (9.5 mm) lead length at TL = 75 C (fig. 1) IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 80 A TJ, TSTG - 55 to + 150 C Operating junction and storage temperature range Document Number: 88761 Revision: 23-Oct-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 UG2A thru UG2D Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage IF = 2.0 A TA = 25 C Maximum DC reverse current at rated DC blocking voltage IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Typical reverse recovery time IF = 2.0 A, VR = 30 V, dI/dt = 50 A/s, Irr = 10 % IRM Typical junction capacitance UNIT VF (1) 0.95 V 5.0 A 200 trr TJ = 25 C 15 ns 25 trr TJ = 100 C TJ = 25 C IF = 2.0 A, VR = 30 V, dI/dt = 50 A/s, Irr = 10 % IRM Typical stored charge VALUE IR TA = 100 C Maximum reverse recovery time SYMBOL ns 35 10 Qrr TJ = 100 C 4 V, 1 MHz nC 22 CJ 15 pF UG2C UG2D UNIT Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance UG2A UG2B (1) RJA 45 C/W Note Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE UG2D-E3/54 0.404 54 4000 13" diameter paper tape and reel UG2D-E3/73 0.404 73 2000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 100 Resistive or Inductive Load 0.375" (9.5 mm) Lead Length TL Lead Temperature 2.5 2.0 1.5 1.0 TA, Ambient Temperature P.C.B. Mounted 0.47" x 0.47" (12 mm x 12 mm) Copper Pads 0.5 0 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 3.0 10 TL = 75 C 8.3 ms Single Half Sine-Wave 1 0 25 50 75 100 125 150 175 1 10 100 Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Maximum Forward Current Derating Curves Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 88761 Revision: 23-Oct-09 UG2A thru UG2D Vishay General Semiconductor 60 Recovered Stored Charge/Reverse Recovery Time, nC/ns Instantaneous Forward Current (A) 100 TJ = 150 C 10 TJ = 125 C 1 TJ = 100 C 0.1 TJ = 25 C 0.01 0.2 50 dI/dt = 150 A/s dI/dt = 100 A/s trr Qrr 40 dI/dt = 20 A/s dI/dt = 50 A/s 30 dI/dt = 100 A/s dI/dt = 150 A/s dI/dt = 50 A/s 20 dI/dt = 20 A/s 10 0 0.4 0.6 0.8 1.0 1.2 1.4 0 25 75 50 100 125 175 150 Instantaneous Forward Voltage (V) Junction Temperature (C) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Reverse Switching Charateristics 100 1000 Junction Capacitance (pF) 10 000 Instantaneous Reverse Leakage Current (A) IF = 2.0 A VR = 30 V TJ = 150 C TJ = 125 C 100 TJ = 100 C 10 TJ = 25 C 1 0.1 0 20 40 60 80 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 10 1 0.1 100 1 100 10 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 6 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AC (DO-15) 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. Document Number: 88761 Revision: 23-Oct-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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