Silicon Surge Voltage Suppressor
5SSB ..X Series
Weight: 0.115 kgDimensions in mm
Doc. No. 5SYA 1031-01 Nov.95
Features
The 5SSB silicon surge voltage suppressor consists of a diffused pnp-Si-wafer mounted with
pressure contact in a hermetically sealed metal-ceramic-package.
5SSB silicon surge voltage suppressors are best suited to protect power thyristors against small
and medium power surges (e.g. 200 kW over 10 µs). They allow the use of thyristors with lower
voltage capability and much smaller snubber circuits.
Applications are e.g.:
Traction, HVDC transmission, generator excitation, transmitter power supply, high power motor
controls.
ABB Semiconductors AG
Type and
ordering number VR
[ V ]
5SSB 50X0400
5SSB 50X0500
5SSB 38X0600
5SSB 38X0700
5SSB 30X0800
5SSB 30X0900
5SSB 26X1000
5SSB 26X1100
5SSB 23X1200
5SSB 23X1300
5SSB 20X1400
5SSB 20X1500
5SSB 30X1600
5SSB 30X1700
5SSB 30X1800
5SSB 30X1900
5SSB 26X2000
5SSB 26X2100
5SSB 26X2200
5SSB 26X2300
5SSB 23X2400
5SSB 23X2500
5SSB 23X2600
5SSB 23X2700
5SSB 20X2800
5SSB 20X2900
5SSB 20X3000
5SSB 20X3100
450 ± 50
550 ± 50
650 ± 50
750 ± 50
850 ± 50
950 ± 50
1050 ± 50
1150 ± 50
1250 ± 50
1350 ± 50
1450 ± 50
1550 ± 50
1650 ± 50
1750 ± 50
1850 ± 50
1950 ± 50
2050 ± 50
2150 ± 50
2250 ± 50
2350 ± 50
2450 ± 50
2550 ± 50
2650 ± 50
2750 ± 50
2850 ± 50
2950 ± 50
3050 ± 50
3150 ± 50
Type and
ordering number VR
Thyristor
VDRM
VRRM
IRM [A] IRRM
10 x 100 µsPRAV PRSM
1 x 10 µs
[V] [V] 1 x 10µs 1 x 100µs 1 x 1ms 1 x 10ms [A] [W] [kW]
5SSB 50X0400
5SSB 50X0500 450 ± 50
550 ± 50 500
600 500 135 33 7.5 70 30 * 350
5SSB 38X0600
5SSB 38X0700 650 ± 50
750 ± 50 700
800 380 100 25 4.5 60 30 * 350
5SSB 30X0800
5SSB 30X0900 850 ± 50
950 ± 50 900
1000 300 80 21 4 50 30 * 350
5SSB 26X1000
5SSB 26X1100 1050 ± 50
1150 ± 50 1100
1200 260 67 18 3.6 41 30 * 350
5SSB 23X1200
5SSB 23X1300 1250 ± 50
1350 ± 50 1300
1400 230 58 15 3.4 35 30 * 350
5SSB 20X1400
5SSB 20X1500 1450 ± 50
1550 ± 50 1500
1600 200 50 13 3 30 30 * 350
5SSB 30X1600
5SSB 30X1700
5SSB 30X1800
5SSB 30X1900
1650 ± 50
1750 ± 50
1850 ± 50
1950 ± 50
1800
1800
2000
2000
300 80 21 4 50 60 ** 700
5SSB 26X2000
5SSB 26X2100
5SSB 26X2200
5SSB 26X2300
2050 ± 50
2150 ± 50
2250 ± 50
2350 ± 50
2200
2200
2400
2400
260 67 18 3.6 41 60 ** 700
5SSB 23X2400
5SSB 23X2500
5SSB 23X2600
5SSB 23X2700
2450 ± 50
2550 ± 50
2650 ± 50
2750 ± 50
2600
2600
2800
2800
230 58 15 3.4 35 60 ** 700
5SSB 20X2800
5SSB 20X2900
5SSB 20X3000
5SSB 20X3100
2850 ± 50
2950 ± 50
3050 ± 50
3150 ± 50
3000
3000
3200
3200
200 50 13 3 30 60 ** 700
2 of 6 Doc. No. 5SYA 1031-01 Nov.95
Thermal resistance junction-heatsink:
5SSB 50X0400 ... 20X1500: Rth = 0.5 K/W.
5SSB 30X1600 ... 20X3100 (double sided cooling): Rth = 0.25 K/W.
For single sided cooling (5SSB 50X0400 ... 20X1500) the side carrying the
serial number shall be cooled.
Temperature coefficient of the avalanche voltage VR:+ 0.11 % per degree C:
VR (T) = VRO [1 + 1.1 * 10-3 (T - 60 ºC)].
VR (60 ºC) = VRO; VR (25 ºC) = 0.93* VRO; VR (125 ºC) = 1.07 * VRO.
The blocking current IR is proportional to e [T(ºC)/20ºC].
IR (0.8 * VR; Tvj = 45 ºC): 50 % - Value: < 4 µA; Arithm. meanvalue: < 8 µA.
Junction capacitance at zero voltage (Tvj = 60 ºC);
5SSB 50X0400 ... 20X1500: 1100 pF; 5SSB 30X1600 ... 20X3100: 550 pF.
Storage temperature/max. junction temperature -40...125 ºC/125 ºC .
Admissible acceleration (vibration): 10 g.
Mounting torque: 3.5 Nm.
VR
Symmetrical avalanche voltage at sin ÎA = 20 A, tp = 10 µs, Tvj = 60 ºC.
IRM
Max. avalanche current for a single sine half wave pulse.
IRRM
Max. avalanche current for 10 pulses of 100 µs width, repetition frequency 50 Hz.
PRAV
Admissible continuous losses at RthCA ≤ 1 K/W, TA ≤ 60 ºC.
* Single side cooling
** Double side cooling
PRSM
Peak power losses for a single 10 µs current surge.
Tvj
The initial virtual junction temperature is 60 ºC.
ABB Semiconductors AG 5SSB ..X Series
Doc. No. 5SYA 1031-01 Nov.95 3 of 6
5SSB ..X Series ABB Semiconductors AG
Product of max. admissible square wave current IRRM and avalanche voltage VR in function of pulse width tp;
parameter is the repetition frequency. Case temperature Tc ≤ 60 ºC.
5SSB 30X1600 - 5SSB 20X31005SSB 50X0400 - 5SSB 20X1500
5SSB 20X1400
5SSB 20X1500
5SSB 20X2800
5SSB 20X2900
5SSB 20X3000
5SSB 20X3100
F5SSB 23X1200
5SSB 23X1300
5SSB 23X2400
5SSB 23X2500
5SSB 23X2600
5SSB 23X2700
5SSB 26X1000
5SSB 26X1100
5SSB 26X2000
5SSB 26X2100
5SSB 26X2200
5SSB 26X2300
ED5SSB 30X0800
5SSB 30X0900
5SSB 30X1600
5SSB 30X1700
5SSB 30X1800
5SSB 30X1900
C
5SSB 50X0400
5SSB 50X0500 5SSA 38X0600
5SSB 38X0700
BA
Max. admissible current peak IR vs. base width tp.Avalanche voltage VR vs. junction temperature Tvj.
ABB Semiconductors AG 5SSB ..X Series
4 of 6 Doc. No. 5SYA 1031-01 Nov.95
Avalanche current IR in function of the avalanche voltage VR for single sine wave pulses of base width tp ≤ 20µs.
Tvj = 60 ºC.
17 5SSB 26X2000
18 5SSB 26X2100
19 5SSB 26X2200
20 5SSB 26X2300
10 5SSB 23X1300
11 5SSB 20X1400
12 5SSB 20X1500
7 5SSB 26X1000
8 5SSB 26X1100
9 5SSB 23X1200
15SSB 50X0400
25SSB 50X0500
35SSB 38X0600
45SSB 38X0700
55SSB 30X0800
65SSB 30X0900
13 5SSB 30X1600
14 5SSB 30X1700
15 5SSB 30X1800
16 5SSB 30X1900
21 5SSB 23X2400
22 5SSB 23X2500
23 5SSB 23X2600
24 5SSB 23X2700
25 5SSB 20X2800
26 5SSB 20X2900
27 5SSB 20X3000
28 5SSB 20X3100
5SSB ..X Series ABB Semiconductors AG
Doc. No. 5SYA 1031-01 Nov.95 5 of 6
Avalanche voltage VR vs. base width tp for a single sine half wave current with peak IR as parameter. Tvj = 60 ºC.
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 62 888 6300
Fax +41 62 888 6305
Sales Fax +41 62 888 6306
Doc. No. 5SYA 1031-01 Nov.95
Avalanche voltage VR vs. base width tp for a single sine half wave current with peak IR as parameter. Tvj = 60 ºC.
Advantages of the 5SSB ..R Surge Voltage Suppressors:
•Sharp avalanche-knee: small safety factor (≤ 1.2) for the protected thyristor required, very
small leakage currents at 0.8 x VR; that means higher operating voltages or cost reduction by
using thyristors with lower blocking voltage.
•Immediate «turn-on», no dangerous overshoot as seen e.g. with varistors, thereby clear and
safe protection against overvoltages. RC-snubber can be smaller (smaller losses, cheaper),
approx. 50-100 nF/100 Ω, to damp RFI oscillations. By using 5SSB, a matching of power
thyristors can in most cases be avoided.
•5SSB can be heat sunk and is therefore ideal to protect against repetitive surges. There is no
aging, e.g. as compared to varistors (limited number of surges, deterioration of electrical data).
The temperature coefficient is the same for both 5SSB and protected thyristor.
•In case of a thermal overload, the 5SSB produces always a short circuit, thus still protecting
the thyristor.
