SD210DE-2/214DE-2
Vishay Siliconix
Document Number: 70294
S-02889—Rev. E, 21-Dec-00 www.vishay.com
1
N-Channel Lateral DMOS FETs
(Available Only In Extended Hi-Rel Flow)
PRODUCT SUMMARY
Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns)
SD210DE-2 30 1.5 45 @ VGS = 10 V 0.5 2
SD214DE-2 20 1.5 45 @ VGS = 10 V 0.5 2
FEATURES BENEFITS APPLICATIONS
DUltra-High Speed Switching—tON: 1 ns
DUltra-Low Reverse Capacitance: 0.2 pF
DLow Guaranteed rDS @ 5 V
DLow Turn-On Threshold Voltage
DN-Channel Enhancement Mode
DHigh Speed System Performance
DLow Insertion Loss at High Frequencies
DLow Transfer Signal Loss
DSimple Driver Requirement
DSingle Supply Operation
DFast Analog Switch
DFast Sample-and-Holds
DPixel-Rate Switching
DDAC Deglitchers
DHigh-Speed Driver
DESCRIPTION
The SD210DE-2/214DE-2 are enhancement-mode MOSFETs
designed for h i gh s peed low-gl i t ch s wi t chi ng i n a udi o, vi deo, a nd
high-frequency applications. The SD214DE-2 is normally used
for "10-V analog switching. These MOSFETs utilize lateral
construction to achieve low capacitance and ultra-fast switchi n g
speeds. These MOSFETs do not have a gate protection Zener
diode which results in lower gate leakage and " voltage
capability f rom gate t o substrate. A p oly-silicon gate is featured for
manufacturing reli ability.
The SD210DE/214DE are available only in the “–2” extended
hi-rel flow. The Vishay Siliconix “–2” flow complies with the
requirements of MIL-PRF-19500 for JANTX discrete devices.
For similar products see: quad array—SD5000I-2, and Zener
protected—SD211DE-2/213DE-2/215DE-2.
G
Top View
S
D
TO-206AF
(TO-72) Body
Substrate
(Case)
1
23
4
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Gate-Drain, Gate-Source Voltage "40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Substrate Voltage "30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain-Source Voltage (SD210DE-2)30 V. . . . . . . . . . . . . . . . . . . . . . . .
(SD214DE-2) 20 V. . . . . . . . . . . . . . . . . . . . . . . .
Source-Drain Voltage (SD210DE-2)10 V. . . . . . . . . . . . . . . . . . . . . . . .
(SD214DE-2)20 V. . . . . . . . . . . . . . . . . . . . . . . .
Drain-Substrate Voltage (SD210DE-2)30 V. . . . . . . . . . . . . . . . . . . . . . . .
(SD214DE-2)25 V. . . . . . . . . . . . . . . . . . . . . . . .
Source-Substrate Voltage (SD210DE-2)15 V. . . . . . . . . . . . . . . . . . . . . . . .
(SD214DE-2)25 V. . . . . . . . . . . . . . . . . . . . . . . .
Drain Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 seconds) 300_C. . . . . . . . . . . . . . . .
Storage Temperature –65 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 125_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipationa300 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a. Derate 3 mW/_C above 25_C
Applications Information—See Applications Note AN502
SD210DE-2/214DE-2
Vishay Siliconix
www.vishay.com
2Document Number: 70294
S-02889—Rev. E, 21-Dec-00
SPECIFICATIONSa
Limits
SD210DE-2 SD214DE-2
Parameter SymbolbTest ConditionsbTypcMin Max Min Max Unit
Static
VGS = VBS = 0 V, ID = 10 mA 35 30
Drain-Source Breakdown Voltage V(BR)DS VGS = VBS = –5 V, ID = 10 nA 30 10 20
Source-Drain Breakdown Voltage V(BR)SD VGD = VBD = –5 V, IS = 10 nA 22 10 20 V
Drain-Substrate Breakdown Voltage V(BR)DBO VGB = 0 V, ID = 10 nA,
Source Open 35 15 25
V
Source-Substrate Breakdown Voltage V(BR)SBO VGB = 0 V, IS = 10 mA, Drain Open 35 15 25
VDS = 10 V 0.4 10
Drain-Source Leakage IDS(off) VGS = VBS = –5 V VDS = 20 V 0.9 10
VSD = 10 V 0.5 10 nA
Source-Drain Leakage ISD(off) VGD = VBD = –5 V VSD = 20 V 0.8 10
Gate Leakage IGBS VDB = VSB = 0 V, VGB = "40 V 0.001 0.1 0.1
Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA, VSB = 0 V 0.8 0.5 1.5 0.1 1.5 V
VGS = 5 V 58 70 70
VGS = 10 V 38 45 45
Drain-Source On-Resistance rDS(on) VSB = 0 V
I
D
= 1 mA VGS = 15 V 30 W
ID = 1 mA VGS = 20 V 26
VGS = 25 V 24
Dynamic
gfs V
DS
= 10 V, V
SB
= 0 V, I
D
= 20 mA 11 10 10
Forward Transconductance gos
VDS = 10 V, VSB = 0 V, ID = 20 mA
f = 1 kHz 0.9 mS
Gate Node Capacitance C(GS+GD+GB) 2.5 3.5 3.5
Drain Node Capacitance C(GD+DB) V
DS
= 10 V, f = 1 MHz 1.1 1.5 1.5
Source Node Capacitance C(GS+SB)
VDS = 10 V, f = 1 MHz
VGS = VBS = –15 V 3.7 5.5 5.5 pF
Reverse Transfer Capacitance Crss 0.2 0.5 0.5
Switching
td(on) 0.5 1 1
Turn-On Time trVSB = 0 V, VIN 0 to 5 V, RG = 25 W0.6 1 1
td(off)
VSB = 0 V, VIN 0 to 5 V, RG = 25
W
VDD = 5 V, RL = 680 W2ns
Turn-Off Time tf6
Notes:
a. TA = 25_C unless otherwise noted. DMCBB
b. B is is the body (substrate) and V(BR) is breakdown.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
SD210DE-2/214DE-2
Vishay Siliconix
Document Number: 70294
S-02889—Rev. E, 21-Dec-00 www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Leakage Current vs. Applied Voltage
On-Resistance vs. Temperature
On-Resistance vs. Gate-Source Voltage
Common-Source Forward Transconductance
vs. Drain Current
Applied Voltage (V)
020
IGSS (Diode)
ID (off) @ VGS = VBG = –5 V
IS(off) @ VGD = VBD = –5V
ISBO @ VGB = 0 V, Drain Open
10 nA
1 nA
100 pA
10 pA
1 pA
Leakage
300
04812 20
240
180
60
016
120 5 V
10 V
VGS = 4 V
1 100
20
16
12
8
4
010
25_C
VDS = 15 V
VBS = 0 V
TA = 55_C
125_C
100
–60 6020–20 100 140
80
60
40
20
0
10 V
15 V
20 V
4 8 12 16
TA – Temperature (_C) ID – Drain Current (mA)
gfs – Forward Transconductance (mS)
Threshold Voltage vs. Temperature
5
–60 60 10020–20 140
4
3
2
1
0
–5 V
–1 V
0 V
VGS = VDS = VTH
ID = 1 mA
VBS = –10 V
TA – Temperature (_C)
rDS(on)– Drain-Source On-Resistance ( )
– Gate-Source Threshold Voltage (V)VGS(th)
ISBO
IS(off)
VGS = 5 V
ID = 5 mA, VBS = 0 V
Switching Characteristics
700
600
500
001 7
400
300
200
100
23456
tf – Fall Time (ns)
RL
VSB – Source-Body Voltage (V)
ID(off)
–0.5 V
W
( )
WrDS(on)– Drain-Source On-Resistance ( )
W
SD210DE-2/214DE-2
Vishay Siliconix
www.vishay.com
4Document Number: 70294
S-02889—Rev. E, 21-Dec-00
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage vs. Substrate-Source Voltage Leakage Current vs. Temperature
Input Admittance Forward Admittance
Capacitance vs. Gate-Source Voltage Body Leakage Current vs. Drain-Body Voltage
5
0–4–20
4
3
2
1
0
H
L
VGS = VDS = VTH
ID = 1 mA
TA = 25_C
VBS – Body-Source Voltage (V)
100
10
125 50 75 100 125
ID(off) @ VGS = VBS = –5 V, VDS = 10 V
IS(off) @ VGD = VBD = –5 V, VSD = 10 V
ISBO
ID(off)
IS(off)
IGSS
(Diode)
Leakage (nA)
10
04 20
8
6
4
2
0
VDS = 10 V, f = 1 MHz
VGS = VBS
Capacitance (pF)
C(GS+SB)
C(GS+GD+GB)
C(GD+DB)
C(DG)
012168420
100 mA
100 nA
1 nA
100 pA
ID = 13 mA
1 mA
– Body Leakage
IB
100
10
1
0.1 100 1000
bis
gis
(mS)
VDS = 10 V
ID = 10 mA
TA = 25_C
100
10
1
0.1 100 1000
VDS = 10 V
ID = 10 mA
TA = 25_C
gfs
–bfs
TA – Temperature (_C)
VGS – Gate-Source Voltage (V)
f – Frequency (MHz) f – Frequency (MHz)
–8–12 –16
81216
200 500 200 500
1 pA
VDB – Drain-Body Voltage (V)
– Gate-Source Threshold Voltage (V)VGS(th)
IGSS @ VGS = 10 V
ISBO @ VSB = 10 V
Drain Open
(mS)
10 mA
1 mA
10 nA
10 pA
SD210DE-2/214DE-2
Vishay Siliconix
Document Number: 70294
S-02889—Rev. E, 21-Dec-00 www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Admittance Output Admittance
Output Conductance vs. Drain Current
Output Characteristics
1
0.1
0.01
0.001100 1000
(mS)
brs
+grg
–grg
100
10
1
0.1 100 1000
(mS)
VDS = 10 V
ID = 10 mA
TA = 25_C
50
04 20
40
30
20
10
0
4 V
3 V
2 V
VBS = 0 V
TA = 25_C
VGS = 5 V
1.0
0204
0.8
0.6
0.4
0.2
0
VDS = 5 V
15 V
VBS = 0 V
f = 1 kHz
bog
gog
f – Frequency (MHz) f – Frequency (MHz)
VDS – Drain-Source Voltage (V) ID – Drain Current (mA)
gos– Output Conductance (mS)
– Drain Current (mA)
ID
200 500 200 500
81216 81216
VDS = 10 V
ID = 10 mA
TA = 25_C
10 V
9
SWITCHING TIME TEST CIRCUIT
510 WRL
51 W
VIN
To
Scope +VDD
VOUT
To Scope
0 V
50%
10%
90%
td(on) td(off)
trtf
+5 V
0 V
+VDD
VIN
VOUT
Input pulse: td, tr < 1 ns
Pulse width: 100 ns
Rep rate: 1 MHz
Sampling Scope
tr < 360 ps
RIN = 1 MW
CIN = 2 pF
BW = 500 MHz
50%
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
