OWER MOS FET FIELD EFFECT POWER TRANSISTOR IRF542,543 24 AMPERES 100, 60 VOLTS RDS(ON) = 0.11 0 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. N-CHANNEL CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS) Also, the extended safe operating area with good linear 04198) 118298) roo14.99) transfer characteristics makes it well suited for many linear fr Senteee) of 70.82) SR applications such as audio amplifiers and servo motors. PO o- nak = . vi Features | ' at TEMPERATURE POINT e Polysilicon gate Improved stability and reliability 15S Bln, i Bee I . . -220(5.59) e 4 No secondary breakdown Excellent ruggedness TTT ssosa arene e Ultra-fast switching Independent of temperature vert [ EF .500(12.7)MIN, * Voltage controlled High transconductance TERM2 2551.20 e Low input capacitance Reduced drive requirement veawe 4 } 93310 84) | 2 ,105(2.67) ob} L107 gin Excellent thermal stability Ease of paralleling aL =e Be.41) rl ~~ EE SrBT38) 95611.98)__| ae TERM.1TERM.2] TERM.3 TAB UNIT TYPE POWER MOS FET T0-220-AB) GATE | ()RAIN| SOURCE ORAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF542 IRF543 UNITS Drain-Source Voltage Vpss 100 60 Volts Drain-Gate Voltage, Ras = 1MO VpGAa 100 60 Volts Continuous Drain Current @ To = 25C Ip 24 24 A @ Tc = 100C 15 15 A Pulsed Drain Current lpm 96 96 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 125 125 Watts Derate Above 25C 1.0 1.0 w/c Operating and Storage Junction Temperature Range Ty, Tsta -65 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Resc 1.00 1.00 C/AN Thermal Resistance, Junction to Ambient RaJa 80 80 C/W Maximum Lead Temperature for Soldering Purposes: %" from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 187 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC |SYMBOL | MIN | TYP MAX UNIT | off characteristics Drain-Source Breakdown Voltage IRF542 BVpss 100 ee _ Volts (Vas = OV, Ip = 250 pA) IRF543 60 _ _ Zero Gate Voltage Drain Current Ipss (Vpg = Max Rating, Vgg = OV, Tc = 25C) _ _ 250 LA (Vps = Max Rating, x 0.8, Vgg = OV, To = 125C) _ _ 1000 OVoe soy oe Current less _ _ +500 nA on characteristics* Gate Threshold Voltage To = 25C | Vest) 2.0 _ 4.0 Volts (Vos = Ves; ID = 250 A) On-State Drain Current | 24 A (V@g = 10V, Vpg = 10V) DON) Static Drain-Source On-State Resistance (Vag = 10V, Ip = 15A) Rps(On) _ 0.09 0.14 Ohms Forward Transconductance (Vpg = 10V, Ip = 15A) Ofs 5.4 7.0 _ mhos dynamic characteristics Input Capacitance Vag = 0V Ciss 1400 1600 pF Output Capacitance Vos = 25V Coss _ 560 800 pF Reverse Transfer Capacitance f= 1 MHz Crss 120 300 pF switching characteristics Turn-on Delay Time Vos = 30V tdjon) _ 20 ~ ns Rise Time Ip = 15A, Vag = 15V tr _ 115 _ ns Turn-off Delay Time ReGen = 500, Rag = 12.50 | taioff) _ 50 _ ns Fall Time (Ras (EQuiv.) = 102) tf 30 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 24 A Pulsed Source Current Ism _ _ 96 A Diode Forward Voltage _ 11 \ (To = 25C, Vas = OV, Ig = 24A) Vsp 2.3 Volts Reverse Recovery Time ter _ 250 _ ns (Ig = 27A, dis/dt = 100A/usec, To = 125C) QrrR _ 2.0 _ uc *Pulse Test: Pulse width < 300 us, duty cycle = 2% 800 400 200 100 80 60 40 7 10 8 OPERATION IN THIS AREA MAY BE LIMITED BY Rosin) Ip, DRAIN CURRENT (AMPERES) I 2 [SINGLE PULSE Te= 25C IRF542 oc 40 6080100 200 Vos. DRAINSOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 1 1 2 4 6 810 20 400 600 1000 188 2.4 22 CONDITIONS: Rps(on) CONDITIONS: ip = 15 A, Vgg = 10V 2.0 Vas(tH) CONDITIONS: Ip = 25024, Vos = Vag 1.8 1.6 1.4 4.2 1.0 0.8 06 Rosion) AND Veggiray NORMALIZED 0.4 0.2 0 -40 0 40 80 Ty, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rogion) AND Vagirn) VS. TEMP. 420 Rosiony 160