BFP540F NPN Silicon RF Transistor * For highest gain low noise amplifier 3 at 1.8 GHz 2 4 1 * Outstanding G ms = 20 dB Noise Figure F = 0.9 dB * Gold metallization for high reliability * SIEGET 45 - Line to p v ie w " ! A T s d ir e c tio n o f u n r e e lin g ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP540F Marking ATs* 1=B Pin Configuration 2=E 3=C 4=E - Package - TSFP-4 * Pin configuration fixed relative to marking (see package picture) Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA > 0 C 4.5 TA 0 C 4 Collector-emitter voltage VCES 14 Collector-base voltage VCBO 14 Emitter-base voltage VEBO 1 Collector current IC 80 Base current IB 8 Total power dissipation1) TS 80C Ptot 250 mW Junction temperature Tj 150 C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 mA 1T is measured on the collector lead at the soldering point to the pcb S 2005-10-11 1 BFP540F Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS 280 K/W Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 4.5 5 - V ICES - - 10 A ICBO - - 100 nA IEBO - - 10 A hFE 50 110 185 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 14 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3.5 V, pulse measured 1For calculation of R thJA please refer to Application Note Thermal Resistance 2005-10-11 2 BFP540F Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 21 30 - Ccb - 0.14 0.24 Cce - 0.3 - Ceb - 0.6 - GHz IC = 50 mA, VCE = 4 V, f = 1 GHz Collector-base capacitance pF VCB = 2 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure dB F IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt - 0.9 1.4 IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt - 1.3 - IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz - 20 - f = 3 GHz - 14.5 - Power gain, maximum available1) G ma |S21e|2 Transducer gain IC = 20 mA, VCE = 2 V, ZS = ZL = 50 , f = 1.8 GHz 15.5 18 - - 13 - IP 3 - 24.5 - P-1dB - 11 - f = 3 GHz Third order intercept point at output2) dB dBm VCE = 2 V, I C = 20 mA, f = 1.8 GHz, ZS = ZL = 50 1dB Compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 2005-10-11 3 BFP540F SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 82.84 28.383 3.19 19.705 1.172 1.3 1.8063 6.76 1 0.81969 2.324 0 3 aA V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 107.5 0.48731 5.5 0.02 5.4 0.31111 0.8051 0.4219 0 0.30232 0 0 0.73234 A A V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1 11.15 1 19.237 0.72983 4 0.46576 0.23794 234 0.3 0.75 1.11 300 fA aA mA V fF V eV K All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: The TSFP-4 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both lead are combined in on electrical connection. RLxI are series resistors for the inductance LxI and Kxa-yb are the coupling coefficients between the inductance Lxa and Lyb. The referencepins for the couple ports are B, E, C, B, E, C. For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes LBI = LBO = LEI = LEO = LCI = LCO = CBE = CBC = CCE = KBO-EO = KBO-CO = KEO-CO = KCI-EI = KBI-CI = KEI-CI = RLBI = RLEI = RLCI = 0.42 0.22 0.26 0.28 0.35 0.22 34 2 33 0.1 0.01 0.11 -0.05 -0.08 0.2 0.15 0.11 0.13 nH nH nH nH pH nH fF fF fF Valid up to 6GHz 2005-10-11 4 BFP540F Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p) 10 3 300 mW RthJS PTOT K/W 200 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 2 150 100 50 0 0 15 30 45 60 75 90 105 120 C 10 1 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 s TS 10 tp Permissible Pulse Load Collector-base capacitance Ccb= (VCB) Ptotmax/P totDC = (tp) f = 1MHz 10 1 Ptotmax / PtotDC 0.3 CCB pF D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.2 0.15 0.1 0.05 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 tp 2 4 6 8 10 V 14 VCB 2005-10-11 5 0 BFP540F Transition frequency fT= (IC) Power gain Gma, Gms = (IC) f = 1GHz VCE = 2V VCE = Parameter in V f = Parameter in GHz 30 dB 30 GHz 26 24 24 22 22 0.9GHz 20 G fT 20 18 18 3V to 4V 16 16 1.8GHz 14 14 12 2V 3GHz 10 8 1V 6 4 4GHz 8 5GHz 6 0.5V 6GHz 4 2 0 0 2.4GHz 12 10 10 20 30 40 50 60 70 80 mA 2 0 100 10 20 30 40 50 60 70 80 mA IC 100 IC Power Gain Gma, Gms = (f), Power gain Gma, Gms = (VCE) |S21| = f (f) IC = 20mA VCE = 2V, IC = 20mA f = Parameter in GHz 55 30 dB dB 0.9GHz 26 45 22 35 20 18 30 Gms 2.4GHz 16 25 20 1.8GHz G G 24 40 3GHz 14 4GHz 12 S|21e| 5GHz Gma 10 15 6GHz 8 10 6 5 0 0 4 1 2 3 4 GHz 2 0 6 0.5 1 1.5 2 2.5 3 3.5 4 V VCE f 2005-10-11 6 5 Package TSFP-4 BFP540F Package Outline 0.55 0.04 0.2 0.05 3 1 1.2 0.05 0.2 0.05 4 2 0.2 0.05 10 MAX. 0.8 0.05 1.4 0.05 0.15 0.05 0.5 0.05 0.5 0.05 Foot Print 0.9 0.45 0.35 0.5 0.5 Marking Layout Manufacturer Pin 1 Type code BFP420F Example Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 0.2 1.4 8 4 Pin 1 0.7 1.55 2005-10-11 7 BFP540F Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2005. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2005-10-11 8