2005-10-11
BFP540F
1
NPN Silicon RF Transistor
• For highest gain low noise amplifier
at 1.8 GHz
• Outstanding Gms = 20 dB
Noise Figure F = 0.9 dB
• Gold metallization for high reliability
• SIEGET 45 - Line
12
43
A T s
!
"
d i r e c t i o n o f u n r e e l i n g
t o p v i e w
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP540F ATs* 1=B 2=E 3=C 4=E - - TSFP-4
* Pin configuration fixed relative to marking (see package picture)
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
TA > 0 °C
T
A
≤ 0 °C
VCEO
4.5
4
V
Collector-emitter voltage VCES 14
Collector-base voltage VCBO 14
Emitter-base voltage VEBO 1
Collector current IC80 mA
Base current IB8
Total power dissipation1) TS ≤ 80°C Pto
t
250 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
1TS is measured on the collector lead at the soldering point to the pcb
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BFP540F
2
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 280 K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 4.5 5 - V
Collector-emitter cutoff current
VCE = 14 V, VBE = 0 ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0 ICBO - - 100 nA
Emitter-base cutoff current
VEB = 0.5 V, IC = 0 IEBO - - 10 µA
DC current gain
IC = 20 mA, VCE = 3.5 V, pulse measured hFE 50 110 185 -
1For calculation of RthJA please refer to Application Note Thermal Resistance
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BFP540F
3
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 50 mA, VCE = 4 V, f = 1 GHz fT21 30 - GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.14 0.24 pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.3 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.6 -
Noise figure
IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt
IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt
F
-
-
0.9
1.3
1.4
-
dB
Power gain, maximum available1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt,
f = 1.8 GHz
f = 3 GHz
Gma
-
-
20
14.5
-
-
Transducer gain
IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
f = 3 GHz
|S21e|2
15.5
-
18
13
-
-
dB
Third order intercept point at output2)
VCE = 2 V, IC = 20 mA, f = 1.8 GHz,
ZS = ZL = 50 Ω
IP3- 24.5 - dBm
1dB Compression point at output
IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
P-1dB - 11 -
1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
2005-10-11
BFP540F
4
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
IS = 82.84 aA
VAF = 28.383 V
NE = 3.19 -
VAR = 19.705 V
NC = 1.172 -
RBM = 1.3 Ω
CJE = 1.8063 fF
TF = 6.76 ps
ITF = 1mA
VJC = 0.81969 V
TR = 2.324 ns
MJS = 0-
XTI = 3-
NF = 1-
ISE = 11.15 fA
NR = 1-
ISC = 19.237 aA
IRB = 0.72983 mA
RC = 4Ω
MJE = 0.46576 -
VTF = 0.23794 V
CJC = 234 fF
XCJC = 0.3 -
VJS = 0.75 V
EG = 1.11 eV
TNOM 300 K
BF = 107.5 -
IKF = 0.48731 A
BR = 5.5 -
IKR = 0.02 A
RB = 5.4 Ω
RE = 0.31111 -
VJE = 0.8051 V
XTF = 0.4219 -
PTF = 0 deg
MJC = 0.30232 -
CJS = 0 fF
XTB = 0 -
FC = 0.73234
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
LBI = 0.42 nH
LBO = 0.22 nH
LEI = 0.26 nH
LEO = 0.28 nH
LCI = 0.35 pH
LCO = 0.22 nH
CBE =34 fF
CBC = 2fF
CCE = 33 fF
KBO-EO = 0.1 -
KBO-CO = 0.01 -
KEO-CO = 0.11 -
KCI-EI = -0.05 -
KBI-CI = -0.08 -
KEI-CI = 0.2 -
RLBI = 0.15 Ω
RLEI = 0.11 Ω
RL
C
I = 0.13 Ω
Valid up to 6GHz
The TSFP-4 package has two emitter leads. To avoid high
complexity of the package equivalent circuit, both lead are
combined in on electrical connection. RLxI are series resistors
for the inductance LxI and Kxa-yb are the coupling coefficients
between the inductance Lxa and Lyb. The referencepins for
the couple ports are B, E, C, B´, E`, C´.
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
2005-10-11
BFP540F
5
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
50
100
150
200
mW
300
PTOT
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
Ptotmax/ PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0 2 4 6 8 10 V14
VCB
0
0.05
0.1
0.15
0.2
pF
0.3
CCB
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BFP540F
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Transition frequency fT= ƒ(IC)
f = 1GHz
VCE = Parameter in V
0 10 20 30 40 50 60 70 80 mA 100
IC
0
2
4
6
8
10
12
14
16
18
20
22
24
GHz
30
fT
3V to 4V
2V
1V
0.5V
Power gain Gma, Gms = ƒ(IC)
VCE = 2V
f = Parameter in GHz
0 10 20 30 40 50 60 70 80 mA 100
IC
2
4
6
8
10
12
14
16
18
20
22
24
26
dB
30
G
0.9GHz
1.8GHz
2.4GHz
3GHz
4GHz
5GHz
6GHz
Power Gain Gma, Gms = ƒ(f),
|S21|² = f (f)
VCE = 2V, IC = 20mA
01234GHz 6
f
0
5
10
15
20
25
30
35
40
45
dB
55
G
Gms
Gma
S|21e|²
Power gain Gma, Gms = ƒ (VCE)
IC = 20mA
f = Parameter in GHz
0 0.5 1 1.5 2 2.5 3 3.5 4 V5
VCE
2
4
6
8
10
12
14
16
18
20
22
24
26
dB
30
G
0.9GHz
1.8GHz
2.4GHz
3GHz
4GHz
5GHz
6GHz
2005-10-11
BFP540F
7
Package TSFP-4
Package Outline
Foot Print
Marking Layout
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Manufacturer
Type code BFP420F
Example
Pin 1
0.35
0.45
0.9
0.5 0.5
40.2
1.55 0.7
1.4
8
Pin 1
±0.05
0.2
±0.05
1.4
12
10˚ MAX.
±0.05
0.8
1.2
±0.05
±0.04
0.55
±0.05
0.2
±0.05
0.15
±0.05
0.2
0.5
±0.05
0.5
±0.05
43
2005-10-11
BFP540F
8
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
