CMOS SERIAL E2PROM
S-29UXX0A Series
6 Seiko Instruments Inc.
2. WRITE (WRITE, ERASE)
There are two write instructions, WRITE and ERASE. Each automatically begins writing to the non-volatile memory
when CS go es low at the completion of the specified clock input.
The write operation is completed in 10 ms (tPR Max.), and the typical write period is less than 5 ms. In the S-
29UXX0A Series, it is easy to VERIFY the completion of the write operation in order to minimize the write cycle by
setting CS t o high and checking the DO pin, wh ich is low during the write operat ion and high aft er its completion. This
VERIFY procedure can be executed over and ov er again.
Because all SK and DI input s ar e ignored during the write operation, any input of instruction will also be disregarded.
W hen DO outputs high aft er completion of t he write operation or if it is in the high-impedence st at e (Hi-Z), t he input of
instructions is available. Even if the DO pin remains high, it will e nt er the high-im pedence state upon t he r ecognition
of a high of DI (start- bit) attached to t he r ising edge of an SK pulse ( see Figure 3).
DI input sho uld be low during the VERI FY pr ocedure.
2.1 WRITE
This instruct ion writes 16-bit data to a specified address.
After changing CS to high, input a start-bit, op-code (W RITE), address, and 16- bit data. If there is a dat a overflow of
more than 16 bits, only the last 16-bits of the data is considered valid. Changing CS to low will start the WRITE
operatio n. It is not necessar y to make the data "1" before initiating the WRITE operation.
Figure 7 WRITE Timi ng (S - 29 U 1 30A)
tCDS
tPR
busy Hi-Z
tSV
VERIFY
Hi-Z
1
CS
SK
DI
DO tHZ1
2345678910 25
01D0
ready
A5 A4 A3 A2 A1 A0 D15
Figure 8 WRI TE Ti ming (S-2 9U2 20A)
tCDS
tPR
busy Hi-Z
tSV
VERIFY
Hi-Z
1
CS
SK
DI
DO tHZ1
2 3 4 5 6 7 8 9 10 11 12 27
01D0
ready
XA6