BF 414 NPN Silicon RF Transistor BF 414 For low-noise, common base VHF and FM stages 2 3 1 Type Marking Ordering Code BF 414 - Q62702-F517 Pin Configuration 1 2 3 C B Package1) TO-92 E Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 30 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 4 Collector current IC 25 Base current IB 3 Total power dissipation, TA 45 C Ptot 300 mW Junction temperature Tj 150 C Storage temperature range Tstg - 55 ... + 150 Rth JA mA Thermal Resistance Junction - ambient 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 350 K/W BF 414 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Values Symbol Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 2 mA, IB = 0 V(BR) CE0 30 - - Collector-base breakdown voltage IC = 10 A, IE = 0 V(BR) CB0 40 - - Emitter-base breakdown voltage IE = 10 A V(BR) EB0 4 - - Collector cutoff current VCB = 20 V ICB0 - - 60 nA DC current gain IC = 4 mA, VCE = 10 V hFE 30 80 - - - - 400 560 - - V AC Characteristics Transition frequency IC = 1 mA, VCE = 10 V, f = 100 MHz IC = 5 mA, VCE = 10 V, f = 100 MHz fT Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Cce - 0.1 - pF Noise figure IC = 5 mA, VCE = 10 V, f = 100 MHz RS = 60 F - 3 - dB Semiconductor Group 2 MHz