BF 414
Semiconductor Group 2
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
DC Characteristics
MHzTransition frequency
C = 1 mA, VCE = 10 V, f = 100 MHz
C = 5 mA, VCE = 10 V, f = 100 MHz
fT–
–400
560 –
–
dBNoise figure
C = 5 mA, VCE = 10 V, f = 100 MHz
S = 60 Ω
F–3–
pFCollector-emitter capacitance
VCE = 10 V, VBE = 0 V, f = 1 MHz Cce – 0.1 –
UnitValues
V
Parameter
Collector-emitter breakdown voltage
C = 2 mA, IB = 0
Collector-base breakdown voltage
C = 10 µA, IE = 0
Emitter-base breakdown voltage
E = 10 µA
Symbol
V(BR) CE0
V(BR) CB0
V(BR) EB0
min.
30
40
4
typ.
–
–
–
max.
–
–
–
nACollector cutoff current
VCB = 20 V ICB0 ––60
–
DC current gain
C = 4 mA, VCE = 10 V hFE 30 80 –
AC Characteristics