BF 414
Semiconductor Group 1
NPN Silicon RF Transistor BF 414
For low-noise, common base
VHF and FM stages
13
2
Maximum Ratings
Type Ordering CodeMarking Package1)
Pin Configuration
BF 414 Q62702-F517 TO-92
123
C B E
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 30 V
Collector-base voltage VCB0 40
Emitter-base voltage VEB0 4
Thermal Resistance
Junction - ambient Rth JA 350 K/W
Collector current IC25 mA
Base current IB3
Total power dissipation, TA 45 ˚C Ptot 300 mW
Junction temperature Tj150 ˚C
Storage temperature range Tstg – 55 … + 150
1) For detailed information see chapter Package Outlines.
BF 414
Semiconductor Group 2
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
DC Characteristics
MHzTransition frequency
I
C = 1 mA, VCE = 10 V, f = 100 MHz
I
C = 5 mA, VCE = 10 V, f = 100 MHz
fT
400
560
dBNoise figure
I
C = 5 mA, VCE = 10 V, f = 100 MHz
R
S = 60
F–3–
pFCollector-emitter capacitance
VCE = 10 V, VBE = 0 V, f = 1 MHz Cce 0.1
UnitValues
V
Parameter
Collector-emitter breakdown voltage
I
C = 2 mA, IB = 0
Collector-base breakdown voltage
I
C = 10 µA, IE = 0
Emitter-base breakdown voltage
I
E = 10 µA
Symbol
V(BR) CE0
V(BR) CB0
V(BR) EB0
min.
30
40
4
typ.
max.
nACollector cutoff current
VCB = 20 V ICB0 ––60
DC current gain
I
C = 4 mA, VCE = 10 V hFE 30 80
AC Characteristics