© 2008 IXYS All rights reserved 1 - 4
20080523a
IXKC 20N60C
IXYS reserves the right to change limits, test conditions and dimensions.
VDSS = 600 V
ID25 = 15 A
RDS(on) max = 190 mΩ
CoolMOS™ 1) Power MOSFET
MOSFET
Symbol Conditions Maximum Ratings
VDSS TVJ = 25°C 600 V
VGS ± 20 V
ID25
ID90
TC = 25°C
TC = 90°C
15
10.5
A
A
EAS
EAR
single pulse; ID = 10 A; TC = 25°C
repetitive; ID = 20 A; TC = 25°C
690
1
mJ
mJ
D
G
S
Electrically isolated back surface
2500 V electrical isolation
N-Channel Enhancement Mode
Low RDSon, high VDSS MOSFET
Ultra low gate charge
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specifi ed)
min. typ. max.
RDSon VGS = 10 V; ID = 16 A 160 190 mΩ
VGS(th) VDS = VGS; ID = 1 mA 2.1 3.9 V
IDSS VDS = 600 V; VGS = 0 V TVJ = 25°C
TVJ = 150°C
25
250
µA
µA
IGSS VGS = ± 20 V; VDS = 0 V 100 nA
Ciss
Coss
VGS = 0 V; VDS = 25 V
f = 1 MHz
2400
780
pF
pF
Qg
Qgs
Qgd
VGS = 0 to 10 V; VDS = 350 V; ID = 20 A
87
11
33
114 nC
nC
nC
td(on)
tr
td(off)
tf
VGS = 13 V; VDS = 380 V
ID = 21 A; RG = 3.3 Ω; TVJ = 125°C
10
5
67
4.5
ns
ns
ns
ns
RthJC 1 K/W
Features
• Silicon chip on Direct-Copper-Bond
substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 30 pF)
• CoolMOS™ 1) power MOSFET
- 3rd generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
- low thermal resistance
due to reduced chip thickness
• Enhanced total power density
Applications
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
Advantages
• Easy assembly:
no screws or isolation foils required
• Space savings
• High power density
• High reliability
1) CoolMOS™ is a trademark of
Infi neon Technologies AG.
ISOPLUS220TM
G
D
Sisolated tab
q
E72873
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© 2008 IXYS All rights reserved 2 - 4
20080523a
IXKC 20N60C
IXYS reserves the right to change limits, test conditions and dimensions.
Source-Drain Diode
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specifi ed)
min. typ. max.
ISVGS = 0 V 20 A
VSD IF = 16 A; VGS = 0 V 0.9 1.2 V
trr
QRM
IRM
IF = 20 A; -diF /dt = 100 A/µs; VR = 480 V
500
11
70
800 ns
µC
A
Component
Symbol Conditions Maximum Ratings
TVJ
Tstg
operating
storage
-55...+150
-55...+150
°C
°C
VISOL RMS leads-to-tab, 50/60 Hz, f = 1 minute 2500 V~
FCmounting force 11-65 / 2.4-11 N/lb
Symbol Conditions Characteristic Values
min. typ. max.
RthCH with heatsink compound 0.3 K/W
Weight 2.7 g
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© 2008 IXYS All rights reserved 3 - 4
20080523a
IXKC 20N60C
IXYS reserves the right to change limits, test conditions and dimensions.
ISOPLUS220TM Outline
SYM
A2
b4
D1
b2
L1
E1
E
1. Bottom heatsink is electrically isolated from Pin 1, 2, or 3.
Product Outline TO-273 except D and D1 dimension.
2. This drawing will meet dimensional requirement of JEDEC SS
NOTE:
T
L
e
b
c
D
A
11.0010.00.433.394
13.00
3.00
42.5
7.50
.118
.100
.512
.295
.138
.571
.335
BASIC 14.50
3.50
8.50
47.5
2.55 BASIC
2.50
4.00
2.35
12.00
15.00
.051
.035
.028
.472
.591
.093
.049
.039
.512
.630
.100
.065
INCHES
MIN
.098
.157 MAX
.118
.197
1.300.90
2.55
1.65
1.00
0.70
13.00
16.00
1.25
MILLIMETERS
MAXMIN
3.00
5.00
2X b2
L1
L
A2
2X b4
2X e 3X b
123
c
D
EA
T
* Note 1
Fig. 1 Power dissipation Fig. 2 Typ. output characteristics Fig. 3 Typ. output characteristics
04080120160
0
20
40
60
80
100
120
140
TC [°C]
Ptot [W]
V =
GS
VDS [V] 20
ID [A]
70 20 V
10 V
8 V
7 V
6.5 V
6 V
5.5 V
5 V
4.5 V
TJ = 25°C
40
VDS [V]
ID [A]
20 V
10 V
7 V
6 V
5.5 V
5 V
4.5 V
V =
GS
TJ = 150°C
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© 2008 IXYS All rights reserved 4 - 4
20080523a
IXKC 20N60C
IXYS reserves the right to change limits, test conditions and dimensions.
Fig. 5 Drain-source on-state resistanceFig. 4 Typ. drain-source on-state
resistance
Fig. 7 Forward characteristic
of reverse diode
Fig. 8 Typ. gate charge
Fig. 10 Avalanche energy Fig. 11 Drain-source breakdown voltage
Fig. 6 Typ. transfer characteristics
Fig. 9 Typ. capacitances
RDS(on) [7]
1.4
ID [A]
4 V
4.5 V
5 V
5.5 V
6 V
6.5 V
20 V
35
V =
GS
TJ = 150°C
1.0
RDS(on) [7]
TJ [°C]
1.0
140
ID = 13.1 A
VGS = 10 V
ID [A]
70
VGS [V]
8
VDS > 2x ID x RDS(on)max
IF [A]
VSD [V]
VDS max
VDS max
QG [nC]
120
VGS [V]
14 ID = 20.7 A pulsed
VDS [V] 500
C [ pF ]
VGS = 0 V, f = 1 MHz
TJ [°C]
140
EAS [mJ]
650
700 ID = 10 A
TJ [°C] 140
V(BR)DSS [V]
700 ID = 0.25 mA
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