GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 SFH 495 P SFH 4552 Wesentliche Merkmale Features * Stimulierter Emitter mit sehr hohem Wirkungsgrad * Laserdiode in diffusem Gehause * Besonders geeignet fur Impulsbetrieb bei hohen Stromen * Hohe Zuverlassigkeit * Gegurtet lieferbar * * * * * Anwendungen Applications * Datenubertragung * Fernsteuerungen * Messen, Steuern, Regeln" * Data transfer * Remote controls * For drive and control circuits Stimulated emitter with high efficiency Laser diode in diffuse package Suitable esp. for pulse operation at high current High reliability Available on tape and reel Typ Type Bestellnummer Ordering Code Gehause Package SFH 495 P Q62703-Q2891 5-mm-LED-Gehause (T 1 3/4), plan, schwarz eingefarbt, 2.54-mm-Raster, Kathodenkennzeichnung: kurzerer Anschlu 5 mm LED package (T 1 3/4), flat, black colored, spacing 2.54 mm, cathode marking: short lead. SFH 4552 Q62702-P5054 5-mm-LED-Gehause (T 1 3/4), wei diffus eingefarbt, 2.54-mm-Raster, Kathodenkennzeichnung: kurzerer Anschlu 5 mm LED package (T 1 3/4), white diffuse colored, spacing 2.54 mm, cathode marking: short lead. 2001-04-19 1 SFH 495 P, SFH 4552 Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Tstg Top - 40 ... + 85 0 ... + 85 C Sperrspannung Reverse voltage VR 1 V Stostrom, tp = 200 s, D = 0 Surge current IFSM 1 A Verlustleistung Power dissipation Ptot 160 mW Warmewiderstand Thermal resistance RthJA 350 K/W Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der Strahlung Wavelength at peak emission IF = 200 mA, tp = 20 ms peak 940 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 200 mA 4 nm Abstrahlwinkel Half angle SFH 495 P SFH 4552 Kennwerte (TA = 25 C) Characteristics 30 50 Schaltzeiten, Ie von 10% auf 90% und von 90% auf tr, tf 10%, bei IF = 200 mA, RL = 50 Switching times, Ie from 10% to 90% and from 90% to 10%, IF = 200 mA, RL = 50 Kapazitat Capacitance VR = 0 V, f = 1 MHz Durchlaspannung Forward voltage IF = 1 A, tp = 100 s 2001-04-19 Grad deg. 2 1 ns Co 90 pF VF 2.1 V SFH 495 P, SFH 4552 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Schwellenstrom1) Threshold current 1) Ith < 150 mA Gesamtstrahlungsflu Total radiant flux IF = 1 A, tp = 10 s e 700 mW Strahlstarke Radiant intensity IF = 1 A, tp = 10 s SFH 495 P SFH 4552 Ie 1) mW/sr 400 200 Remark: This IRED works efficiently at forward currents higher than Ith. Warning: This data sheet refers to high power infrared emitting semiconductors. Depending on operating conditions (drive current, pulse duration, optics, etc.) they may emit luminance/radiance levels considered harmful to the human eye, acc. to IEC 825.1. When operating powerful emitters, care should be taken to comply with IEC 825.1 to minimize any possible eye hazard: - Use lowest possible drive level - Use diffusing optics where possible - Avoid staring into powerful emitters or connected fibers 2001-04-19 3 SFH 495 P, SFH 4552 Radiant Intensity I e = f (IF ) e Forward Current IF = f (VF) OHF00328 160 % F 140 OHF00329 2.0 A 1.8 1.6 120 1.4 100 1.2 80 1.0 0.8 60 0.6 40 0.4 20 0 0.2 0 0.4 0.8 1.2 0 1.4 1.6 A 2.0 F 1.6 1.8 2.0 2.2 V 2.4 VF Radiation Characteristics SFH 495 P Irel = f () 40 30 20 10 0 OHF00330 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Radiation Characteristics SFH 4552 Irel = f () 40 30 20 10 0 OHF00441 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2001-04-19 0.8 0.6 0.4 0 20 40 60 80 4 100 120 SFH 495 P, SFH 4552 Mazeichnung Package Outlines 1.8 (0.071) 29.0 (1.142) 27.0 (1.063) 5.0 (0.197) 4.2 (0.165) 0.6 (0.024) 0.4 (0.016) 0.8 (0.031) 0.4 (0.016) o5.1 (0.201) o4.8 (0.189) 2.54 (0.100) spacing SFH 495 P 5.9 (0.232) 5.5 (0.217) Anode 0.6 (0.024) 0.4 (0.016) 3.85 (0.152) 3.35 (0.132) 1.2 (0.047) Area not flat Chip position GEXY6971 SFH 4552 Cathode 6.1 (0.240) 5.7 (0.224) 5.5 (0.217) 1.8 (0.071) 4.0 (0.157) 1.2 (0.047) 29.5 (1.161) 27.5 (1.083) 3.4 (0.134) Chip position o4.8 (0.189) 6.9 (0.272) o5.1 (0.201) 2.54 (0.100) spacing 0.6 (0.024) 0.4 (0.016) 0.8 (0.031) 0.4 (0.016) Area not flat 5.9 (0.232) 5.5 (0.217) 0.6 (0.024) 0.4 (0.016) GEXY6632 Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2001-04-19 5 SFH 495 P, SFH 4552 Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-04-19 6