April 1995
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
_______________________________________________________________________________
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter BS170 MMBF170 Units
VDSS Drain-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGS < 1MΩ)60 V
VGSS Gate-Source Voltage ± 20V
IDDrain Current - Continuous 500 500 mA
- Pulsed 1200 800
PDMaximum Power Dissipation 830 300 mW
Derate Above 25°C6.6 2.4 mW/°C
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
TLMaximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds 300 °C
THERMAL CHARACTERISTICS
RθJA Thermal Resistacne, Junction-to-Ambient 150 417 °C/W
BS170 Rev. C / MMBF170 Rev. D
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
These N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
S
D
G
© 1997 Fairchild Semiconductor Corporation
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Type Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 µA All 60 V
IDSS Zero Gate Voltage Drain Current VDS = 25 V, VGS = 0 V All 0.5 µA
IGSSF Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V All 10 nA
ON CHARACTERISTICS (Note 1)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA All 0.8 2.1 3V
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 200 mA All 1.2 5Ω
gFS Forward Transconductance VDS = 10 V, ID = 200 mA BS170 320 mS
VDS > 2 VDS(on), ID = 200 mAMMBF170 320
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 10 V, VGS = 0 V,
f = 1.0 MHz All 24 40 pF
Coss Output Capacitance All 17 30 pF
Crss Reverse Transfer Capacitance All 7 10 pF
SWITCHING CHARACTERISTICS (Note 1)
ton Turn-On Time VDD = 25 V, ID = 200 m A,
VGS = 10 V, RGEN = 25 ΩBS170 10 ns
VDD = 25 V, ID = 500 mA,
VGS = 10 V, RGEN = 50 ΩMMBF170 10
toff Turn-Off Time VDD = 25 V, ID = 200 m A,
VGS = 10 V, RGEN = 25 ΩBS170 10 ns
VDD = 25 V, ID = 500 mA,
VGS = 10 V, RGEN = 50 ΩMMBF170 10
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
BS170 Rev. C / MMBF170 Rev. D
BS170 Rev. C / MMBF170 Rev. D
012345
0
0.5
1
1.5
2
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
9.0
4.0
8.0
3.0
7.0
V = 10V
GS
DS
D
5.0
6.0
-50 -25 025 50 75 100 125 150
0.5
0.75
1
1.25
1.5
1.75
2
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
V = 10V
GS
I = 500mA
D
-50 -25 025 50 75 100 125 150
0.8
0.85
0.9
0.95
1
1.05
1.1
T , JUNCTION TEMPERATURE (°C)
GATE-SOURCE THRESHOLD VOLTAGE
J
I = 1 mA
D
V = V
DS GS
V , NORMALIZED
th
00.4 0.8 1.2 1.6 2
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V =4.0V
GS
D
R , NORMALIZED
DS(on)
7.0
4.5
10
5.0
6.0
9.0
8.0
00.4 0.8 1.2 1.6 2
0
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125°C
J
25°C
-55°C
D
V = 10V
GS
R , NORMALIZED
DS(on)
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
Figure 3. On-Resistance Variation
with Temperature.Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with
Temperature.
0246810
0
0.4
0.8
1.2
1.6
2
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = 10V
DS
GS
D
T = -55°C
J 25°C 125°C
BS170 / MMBF170
BS170 Rev. C / MMBF170 Rev. D
-50 -25 0 25 50 75 100 125 150
0.925
0.95
0.975
1
1.025
1.05
1.075
1.1
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
J
BV , NORMALIZED
DSS
I = 100µA
D
0.2 0.4 0.6 0.8 11.2 1.4
0.001
0.005
0.01
0.05
0.1
0.5
1
2
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
V = 0V
GS
T = 125°C
J
SD
S
25°C
-55°C
00.4 0.8 1.2 1.6 2
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I =500mA
DV = 25V
DS
1 2 3 5 10 20 30 50
1
2
5
10
20
40
60
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
G
D
S
VDD
RL
V
V
IN
OUT
VGS DUT
RGEN
10%
50%
90%
10%
90%
90%
50%
Input, Vin
Output, V
out
ton toff
td(off) tf
tr
td(on)
Inverted
10%
Pulse Width
Figure 7. Breakdown Voltage Variation
with Temperature.Figure 8. Body Diode Forward Voltage Variation with
Current and Temperature.
Figure 9. Capacitance Characteristics.Figure 10. Gate Charge Characteristics.
Figure 11. Switching Test Circuit.Figure 12. Switching Waveforms.
Typical Electrical Characteristics (continued)
BS170 / MMBF170
BS170 Rev. C / MMBF170 Rev. D
0.0001 0.001 0.01 0.1 1 10 100 300
0.001
0.002
0.01
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1 2
R (t) = r(t) * R
R = (See Datasheet)
θJAθJA
θJA
T - T = P * R (t)
θJA
A
J
P(pk)
t
1 t
2
0.0001 0.001 0.01 0.1 1 10 100 300
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1 2
R (t) = r(t) * R
R = (See Datasheet)
θJAθJA
θJA
T - T = P * R (t)
θJA
A
J
P(pk)
t
1 t
2
1 2 5 10 20 30 60 80
0.005
0.01
0.05
0.1
0.5
1
2
3
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
V = 10V
SINGLE PULSE
T = 25°C
GS
A
RDS(ON) Limit
100ms
1ms
10ms
DC
1s
100us
10s
Figure 15. TO-92, BS170 Transient Thermal Response Curve.
Figure 16. SOT-23, MMBF170 Transient Thermal Response Curve.
1 2 5 10 20 30 60 80
0.005
0.01
0.05
0.1
0.5
1
2
3
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
V = 10V
SINGLE PULSE
T = 25°C
GS
A
RDS(ON) Limit
100ms
1ms
10ms
DC
1s
10s
100us
Figure 13. BS170 Maximum
Safe Operating Area.Figure 14. MMBF170 Maximum
Safe Operating Area.
Typical Electrical Characteristics (continued)
