MTPAMAT Trew DECTH SE International HEXFET Power MOSFETs Tea Rectifier v b BR)DSS D Droin-to-Source Rosjon) Continuous ne nue Ro Pp Fax : Breakdown On-State Drain Current "8" Max. Thermal Max. Power on _Case Part Voltage Resistance 25C 70 Resistance | Ds Demand Outline Number (V) (Q (A) (A) (crw) Surface Mount Packages $0-8 N-Channel IRF9410 30 0.03 7 5.8 50 2.5 91562 H4 IRF7413A 30 0.0135 12 8.4 50 2.5 91613 IRF7413 30 0.011 13 9.2 50 2.5 91330 Dual N-Channel IRF7311 20 0.029 6.6 5.3 62.8 2.0 91435 H4 IRF7333 30 0.10 3.5 2.8 62.5 2.0 91700 [RF9956 30 0.10 3.5 2.8 62.5 91589 30 0.050 49 3.9 62.5 2.0 91700 IRF7313 30 0.029 65 5.2 62.5 2.0 91480 Dual P-Channel [RF7314 -20 0.058 -5,3 -43 62.5 20 91435 H4 IRF9953 -30 6.25 -2.3 -1.8 62.5 2.0 91560 IRF7316 -30 0.058 4.9 3.9 62.5 2.0 91505 * Indicates low VGSth), which can operate at VGS = 2.7 1. Measured at ambient for Micro3, Micro6, Micro8, SO-8. and SOT-223 package styles. All others measured at case. SOT-223 SO0-8 e222 Micro6 Illustrations not to scale SOT-227 Micro8 D-Pak D*-Pak www.irf.com E-13