07/23/10
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HEXFET® Power MOSFET
VDSS = 100V
RDS(on) = 26.5mΩ
ID = 36A
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
S
D
G
Description
Features
IRF540ZPbF
IRF540ZSPbF
IRF540ZLPbF
D2Pak
IRF540ZSPbF
TO-220AB
IRF540ZPbF
TO-262
IRF540ZLPbF
Absolute Maximum Ratings
Parameter Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A
IDM
P
u
l
se
d D
ra
i
n
C
urrent
c
PD @TC = 25°C Power Dissipation W
Linear Derating Factor W/°C
VGS Gate-to-Source Voltage V
EAS (Thermally limited)
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy
d
mJ
EAS (Tested )
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy T
este
d V
a
l
ue
h
IAR
A
va
l
anc
h
e
C
urrent
c
A
EAR
R
epet
i
t
i
ve
A
va
l
anc
h
e
E
ner
gy
g
mJ
TJ Operating Junction and
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
i
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.64 °C/W
RθCS Case-to-Sink, Flat Greased Surface
i
0.50 –––
RθJA Junction-to-Ambient
i
––– 62
RθJA Junction-to-Ambient (PCB Mount)
j
––– 40
-55 to + 175
300 (1.6mm from case )
10 lbf
y
in (1.1N
y
m)
92
0.61
± 20
Max.
36
25
140
120
83
See Fig.12a, 12b, 15, 16
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free
PD - 95531A
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S
D
G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V
∆V(BR)DSS
/
∆TJ Breakdown Voltage Temp. Coefficient ––– 0.093 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 21 26.5 mΩ
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V
gfs Forward Transconductance 36 ––– ––– V
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
QgTotal Gate Charge ––– 42 63
Qgs Gate-to-Source Charge ––– 9.7 ––– nC
Qgd Gate-to-Drain ("Miller") Charge ––– 15 –––
td(on) Turn-On Delay Time ––– 15 –––
trRise Time ––– 51 –––
td(off) Turn-Off Delay Time ––– 43 ––– ns
tfFall Time ––– 39 –––
LDInternal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
LSInternal Source Inductance ––– 7.5 ––– from package
and center of die contact
Ciss Input Capacitance ––– 1770 –––
Coss Output Capacitance ––– 180 –––
Crss Reverse Transfer Capacitance ––– 100 ––– pF
Coss Output Capacitance ––– 730 –––
Coss Output Capacitance ––– 110 –––
Coss eff. Effective Output Capacitance ––– 170 –––
Source-Drain Ratin
s and Characteristics
Parameter Min. Typ. Max. Units
ISContinuous Source Current ––– ––– 36
(Body Diode) A
ISM Pulsed Source Current ––– ––– 140
(Body Diode)
c
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 33 50 ns
Qrr Reverse Recovery Charge ––– 41 62 nC
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
f
VGS = 10V
e
VDD = 50V
ID = 22A
RG = 12 Ω
TJ = 25°C, IS = 22A, VGS = 0V
e
TJ = 25°C, IF = 22A, VDD = 50V
di/dt = 100A/µs
e
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 22A
e
VDS = VGS, ID = 250µA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VDS = 25V, ID = 22A
ID = 22A
VDS = 80V
Conditions
VGS = 10V
e
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 20V
VGS = -20V
IRF540Z/S/LPbF
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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance
Vs. Drain Current
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
60µs PULSE WIDTH
Tj = 25°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0 1 10 100
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
60µs PULSE WIDTH
Tj = 175°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (Α)
VDS = 25V
60µs PULSE WIDTH
TJ = 25°C
TJ = 175°C
0 1020304050
ID, Drain-to-Source Current (A)
0
20
40
60
80
Gfs, Forward Transconductance (S)
TJ = 25°C
TJ = 175°C
VDS = 10V
380µs PULSE WIDTH
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
0
500
1000
1500
2000
2500
3000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0 102030405060
QG Total Gate Charge (nC)
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
VDS= 80V
VDS= 50V
VDS= 20V
ID= 22A
FOR TEST CIRCUIT
SEE FIGURE 13
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100 1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Normalized On-Resistance
Vs. Temperature
25 50 75 100 125 150 175
TJ , Junction Temperature (°C)
0
10
20
30
40
ID , Drain Current (A)
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 22A
VGS = 10V
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
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Q
G
Q
GS
Q
GD
V
G
Charge
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 14. Threshold Voltage Vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.5
2.0
2.5
3.0
3.5
4.0
VGS(th) Gate threshold Voltage (V)
ID = 250µA
1K
VCC
DUT
0
L
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
120
140
160
180
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 8.3A
14A
BOTTOM 20A
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Fig 15. Typical Avalanche Current Vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses
0.01
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
10
20
30
40
50
60
70
80
90
100
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 10% Duty Cycle
ID = 20A
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Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
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TO-220AB package is not recommended for Surface Mount Application
TO-220AB Part Marking Information
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
INTERNAT IONAL PART NUMBER
RECTIFIER
LOT CODE
ASSEMBLY
LOGO
YEAR 0 = 2000
DAT E CODE
WEEK 19
LINE C
LOT CODE 1789
EXAMPLE: T HIS IS AN IRF 1010
Note: "P" in assembly line position
indi cates "L ead - F ree"
IN THE ASSEMBLY LINE "C"
AS S E MB LED ON WW 19, 2000
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
IRF540Z/S/LPbF
10 www.irf.com
D2Pak (TO-263AB) Part Marking Information
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
DATE CODE
YEAR 0 = 2000
WEE K 02
A = AS S E MB L Y S IT E CODE
RE CT IFIE R
INTE RNAT IONAL PART NUMBER
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
F530S
IN THE ASS EMBLY LINE "L"
AS S E MB L E D ON WW 02, 2 0 00
THIS IS AN IRF530S WITH
LOT CODE 8024 INTERNAT IONAL
LOGO
RE CT IFIE R
LOT CODE
AS S E M B L Y YEAR 0 = 2000
PART NUMBER
DAT E CODE
LINE L
WEEK 02
OR
F530S
LOGO
AS S E M B L Y
LOT CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
IRF540Z/S/LPbF
www.irf.com 11
ASSEMBLY
LOT CODE
RE CT IF IE R
INT ER NAT IONAL
AS S E MB L E D ON WW 19, 1997
Note: "P" in as sembly line
pos iti on i ndicates "L ead-F ree"
IN THE ASSEMBLY LINE "C" LOGO
THIS IS AN IRL3103L
LOT CODE 1789
EXAMPLE:
LINE C
DATE CODE
WE E K 19
YEAR 7 = 1997
PART NUMBE R
PART NUMBER
LOGO
LOT CODE
ASSEMBLY
INT ER NAT IONAL
RE CT IF IE R
PRODUCT (OPTIONAL)
P = DESIGNAT ES LEAD-FREE
A = AS S EMBL Y S IT E CODE
WE E K 19
YEAR 7 = 1997
DATE CODE
OR
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IRF540Z/S/LPbF
12 www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2010
TO-220AB package is not recommended for Surface Mount Application.
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.46mH
RG = 25Ω, IAS = 20A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
Notes:
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is only applied to TO-220AB pakcage.
This is applied to D2Pak, when mounted on 1" square PCB (FR-
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
D2Pak Tape & Reel Infomation