4-271
Product Description
Ordering In formation
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS SiGe HBT Si CMOS
InGaP/HBT GaN HEMT SiGe Bi-CMOS
1
2
3
5
4
RF OUT
GND
GND
GND
RF IN
RF2334
GENERAL PURPOSE AMPLIFIER
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low Power Applications
• Broadband Test Equipment
The RF2334 is a general purpose, low-cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50 Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 4000MHz.
The device is self-contained with 50Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified. The RF2334 is avail-
able in a very small industry-standard SOT23-5 surface
mount package, enabling compact designs which con-
serve board space.
• DC to 6000MHz Operation
• Internally matched Input and Output
• 16dB Small Signal Gain
• 5dB Noise Figure
• +18.5dBm Output Power
• Single Positive Power Supply
RF2334 General Purpose Amplifier
RF2334 PCBA Fully Assembled Evaluation Board
0
Rev A10 030415
1
1.60
+ 0.01
0.400
2.80
+ 0.20
2.90
+ 0.10
0.45
+ 0.10
3° MAX
0° MIN 0.127
0.15
0.05
1.44
1.04
Dimensions in mm.
0.950
Package Style: SOT23-5
9
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RF2334
Rev A10 030415
Absolute Maximum Ratings
Parameter Rating Unit
Input RF Power +13 dBm
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -60 to +150 °C
Parameter Specification Unit Condition
Min. Typ. Max.
Overall T=25°C, ICC=65mA
Frequency Range DC to 6000 MHz
3dB Bandwidth 2.5 GHz
Gain 19.4 dB Freq=100MHz
18 dB Freq=1000MHz
16 dB Freq=2000MHz
14 dB Freq=3000MHz
13 Freq=4000MHz
Gain Flatness ±2 dB 100MHz to 2000MHz
Noise Figure 4.8 dB Freq=2000MHz
Input VSWR 2.1:1 In a 50Ω system, DC to 4000MHz
Output VSWR 1.8:1 In a 50Ω system, DC to 4000MHz
Output IP3 +33 dBm Freq=1000MHz±50kHz, PTONE=-10dBm
Output P1dB +18.5 dBm Freq=1000MHz
Reverse Isolation 20.5 dB Freq=2000MHz
Thermal ICC=65mA, PDISS=300mW (See Note.)
ThetaJC 288 °C/W
Maximum Measured Junction
Temperature 172 °C TAMB=+85°C, VPIN=4.64V
Mean Time Between Failures 400 years See Note.
Power Supply With 22Ω bias resistor
Device Operating Voltage 4.8 V At pin 5 with ICC=65mA
Supply Voltage 6.3 V At evaluation board connector, ICC=65mA
Operating Current 65 68 mA See note.
Note: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution should
be used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 68mA over all intended operating
conditions.
Caution! ESD sensitive device.
RF Micro De vices be lie ves the furnished inf ormation is cor rect and accu rate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume respo nsibility for the use of the described product(s).
4-273
RF2334
Rev A10 030415
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
Pin Function Description Interface Schematic
1GND
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
2GND
Same as pin 1.
3RF IN
RF input pin. This pin is NOT internally DC-blocked. A DC-blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil-
ity.
4GND
Same as pin 1.
5RF OUT
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to VCC. The resistor is selected to set the
DC current into this pin to a desired level. The resistor value is deter-
mined by the following equation:
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds 68mA over the planned oper-
ating temperature. This means that a resistor between the supply and
this pin is always required, even if a supply near 4.8V is available, to
provide DC feedback to prevent thermal r u naway. Because DC is
present on this pin, a DC blocking capacitor, suitable for the frequency
of operation, should be used in most applications. The supply side of
the bias network should also be well bypassed.
RVSUPPLY VDEVICE
–()
ICC
-------------------------------------------------------=
RF OUT
RF IN
1
2
3
5
4
C2
100 pF
C1
100 pF
50 Ω μstrip
50 Ω μstrip J2
RF OUT
J1
RF IN
L1
100 nH
R1
22 Ω
VCC
P1-1
C3
100 pF C4
1 μF
233X410-
P1
1
2
3
P1-1 VCC
GND
NC
4-274
RF2334
Rev A10 030415
Evaluation Board Layout
Board Size 1.0” x 1.0”
Board Thickness 0.020”, Board Material R0-4003 Rogers
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RF2334
Rev A10 030415
Gain versus Frequency Across Temperature
ICC = 65 mA
10.0
12.0
14.0
16.0
18.0
20.0
22.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Fr equency (GHz)
Gain (dB)
-40°C
26°C
85°C
Output P1dB versus Frequency Across Temperature
ICC = 65 mA
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Fre quency (GHz)
Output Power (dbm)
-40°C
26°C
85°C
Output IP3 versus Frequency Across Temperature
ICC = 65 m A
21.00
23.00
25.00
27.00
29.00
31.00
33.00
35.00
0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00
Fr equency (GHz)
3rd Order Intercept Power (dBm)
-40°C
26°C
85°C
Noise Figure versus Frequency Across Temperature
ICC = 65 mA
3.00
4.00
5.00
6.00
7.00
8.00
9.00
0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00
Fr equency (GHz)
Noise Figure (dB)
-40°C
26°C
85°C
Input VSWR ve rsus Frequency Across Temperature
ICC = 65 m A
1.00
1.20
1.40
1.60
1.80
2.00
2.20
0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00
Fr eq uency (GHz)
VSWR
-40°C
26°C
85°C
Output VSWR versus Frequency Across Temperature
ICC = 65 mA
1.00
1.20
1.40
1.60
1.80
2.00
2.20
0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00
Fr equency (GHz)
VSWR
-40°C
26°C
85°C
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RF2334
Rev A10 030415
Reverse Isolation versus Frequency Across
Temperature, ICC = 65 m A
15.00
16.00
17.00
18.00
19.00
20.00
21.00
22.00
0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00
Fr equency (GHz)
Reverse Isolation (dB)
-40°C
26°C
85°C
Current versus Voltage at Evaluation Board Connector,
RBIAS = 22 Ω
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
80.0
90.0
100.0
5.6 5.8 6.0 6.2 6.4 6.6 6.8
VCC (V)
ICC (mA)
-40C
25C
85C
Current versu s Volta g e
(At Pin 5)
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
80.0
90.0
100.0
4.6 4.7 4.8 4.9 5.0 5.1 5.2
VPIN (V)
ICC (mA)
-40C
25C
85C
Vcc=6.3V
Power Dissipated versus Voltage at Pin 5
(TAMBIENT = +85°C)
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
4.64 4.66 4.68 4.70 4.72 4.74 4.76 4.78
VPIN (V)
Power Dissipated (W)
Junction Temperature versus Power Dissipated
(TAMBIENT = +85°C)
120.00
130.00
140.00
150.00
160.00
170.00
180.00
190.00
200.00
210.00
220.00
0.20 0.22 0.24 0.26 0.28 0.30 0.32 0.34 0.36 0.38 0.40
Power Dissi pated (W )
Junction Temperature (°C)
MTTF versus Junction Temperature
(60% Confidence Interval)
10
100
1000
10000
100000
1000000
100 125 150 175 200
Junction Temper ature ( °C )
MTTF (Years)
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RF2334
Rev A10 030415
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S11 Swp Max
6GHz
Swp Min
0.01GHz
De-Embedded S11, VCC = 4.84V, ICC = 65mA, T = 25°C
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S22 Swp Max
6GHz
Swp Min
0.01GHz
De-Embedded S22, VCC = 4.84V, ICC = 65mA, T = 25°C
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RF2334
Rev A10 030415
