TIP30C - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

  

 

. . . designed for use in general purpose amplifier and switching applications.

Compact TO–220 AB package.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

TIP29B

TIP30B

ÎÎÎÎÎ

TIP29C

TIP30C

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

TIP30B

ÎÎÎÎÎ

TIP30C

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎ

ÎÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎÎ

ÎÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

1.0

3.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

0.4

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

0.24

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TA = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

2.0

0.016

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

Unclamped Inductive Load Energy

(See Note 3)

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎ

RθJA

ÎÎÎÎÎÎÎÎ

62.5

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎ

RθJC

ÎÎÎÎÎÎÎÎ

4.167

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1) TIP29B, TIP30B

(IC = 30 mAdc, IB = 0) TIP29C, TIP30C

ÎÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

100

ÎÎÎÎÎ

—

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCE = 60 Vdc, IB = 0)

ÎÎÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎÎ

0.3

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 80 Vdc, VEB = 0) TIP29B, TIP30B

(VCE = 100 Vdc, VEB = 0) TIP29C, TIP30C

ÎÎÎÎÎÎ

ICES

ÎÎÎÎ

—

ÎÎÎÎÎ

200

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎÎ

1.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc)

DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎÎ

hFE

ÎÎÎÎ

ÎÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc)

ÎÎÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎÎ

0.7

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎÎ

1.3

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product (2)

(IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

ÎÎÎÎÎÎ

ÎÎÎÎ

3.0

ÎÎÎÎÎ

—

ÎÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)

ÎÎÎÎÎÎ

hfe

ÎÎÎÎ

ÎÎÎÎÎ

—

ÎÎÎÎ

—

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

(2) fT = hfe• ftest.

(3) This rating based on testing with LC = 20 mH, RBE = 100 Ω, VCC = 10 V, IC = 1.8 A, P.R.F = 10 Hz.



SEMICONDUCTOR TECHNICAL DATA Order this document

by TIP29B/D

 Motorola, Inc. 1995









1 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

80–100 VOLTS

30 WATTS





CASE 221A–06

TO–220AB

REV 1

   

2 Motorola Bipolar Power Transistor Device Data

0.03

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.03

hFE, DC CURRENT GAIN

0.5

5.0

3.0

100

7.0

300

0.1 0.3

0.07 1.0

TJ = 150

–55

VCE = 2.0 V

500

3.0

t, TIME ( s)

Figure 2. Turn–Off Time

IC, COLLECTOR CURRENT (AMP)

IB1 = IB2

IC/IB = 10

′

= ts – 1/8 tf

TJ = 25

′

TURN–ON PULSE

APPROX

+11 V

Vin 0

VEB(off) t1

APPROX

+11 V

Vin

TURN–OFF PULSE

≤

7.0 ns

100 < t2 < 500

t3 < 15 ns

DUTY CYCLE

≈

2.0%

APPROX –9.0 V

RB and RC VARIED TO OBTAIN

DESIRED CURRENT LEVELS.

SCOPE

VCC

Vin

Cjd << Ceb

–4.0 V

Figure 3. Switching Time Equivalent Circuit

0.03

Figure 4. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

0.02 0.1 3.0

0.07

1.0

IC/IB = 10

TJ = 25

tr @ VCC = 10 V

t, TIME ( s)

0.5

0.3

0.1

0.05

0.05 0.3 0.5

td @ VEB(off) = 2.0 V

0.03

0.7

2.0

0.07 0.7

tr @ VCC = 30 V

0.05 0.7

tf @ VCC = 10 V

tf @ VCC = 30 V

0.07

1.0

0.5

0.3

0.1

0.05

0.03

0.7

2.0

0.2

0.1 3.01.00.05 0.3 0.50.07 0.7 2.00.2

Figure 5. Active Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE, (VOLTS)

0.1 10

SECOND BREAKDOWN LIMITED

THERMALLY LIMITED @ TC = 25

BONDING WIRE LIMITED

IC, COLLECTOR CURRENT (AMPS)

1.0 20 10040

3.0

4.0

0.1

TIP29B, 30B

TIP29C, 30C

TJ = 150

CURVES APPLY BELOW

RATED VCEO

1 ms

5 ms

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE opera-

tion; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

   

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

1 2 3

SEATING

PLANE

–T–

   

4 Motorola Bipolar Power Transistor Device Data

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*TIP29B/D*

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