TC74VHC86F/FK
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Toshiba Electronic Devices & Storage Corporation
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74VHC86F, TC74VHC86FK
Quad Exclusive OR Gate
The TC74VHC86 is an advanced high speed CMOS QUAD EXCLUSIVE
OR GATE fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky
TTL while maintaining the CMOS low power dissipation.
The internal circuit is includes on output buffer, which provide high noise
immunity and stable output.
An Input protection circuit ensures that 0 to 5.5 V can be applied to the
input pins without regard to the supply voltage. This device can be used to
interface 5 V to 3 V systems and on two supply system such as battery back
up. This circuit prevents device destruction due to mismatched supply and
input voltages.
Features
High speed: tpd = 4.8 ns (typ.) at VCC = 5 V
Low power dissipation: ICC = 2 μA (max) at Ta = 25°C
High noise immunity: VNIH = VNIL = 28% VCC (min)
Power down protection is provided on all inputs.
Balanced propagation delays: tpLH tpHL
Wide operating voltage range: VCC (opr) = 2 V to 5.5 V
Low noise: VOLP = 0.8 V (max)
Pin and function compatible with 74ALS86
TC74VHC86F
TC74VHC86FK
Weight
SOP14
-P-300-1.27A : 0.18 g (typ.)
VSSOP14-P-0030-0.50 : 0.02 g (typ.)
Start of commercial production
1991-05
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Pin Assignment IEC Logic Symbol
Truth Table
A B Y
L L L
L H H
H L H
H H L
Absolute Maximum Ratings (Note)
Characteristics Symbol Rating Unit
Supply voltage range VCC 0.5 to 7.0 V
DC input voltage VIN 0.5 to 7.0 V
DC output voltage VOUT 0.5 to VCC + 0.5 V
Input diode current IIK 20 mA
Output diode current IOK ±20 mA
DC output current IOUT ±25 mA
DC VCC/ground current ICC ±50 mA
Power dissipation PD 180 mW
Storage temperature Tstg 65 to 150 °C
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the
operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
(4)
(9)
(5)
2A
=1
3A
2B
(12)
(10)
(13)
4A
3B
(6)
(8)
(11)
2Y
3Y
4Y
4B
(1)
(2)
1A
1B
(3) 1Y
VCC
9
4B
4A
4Y
8
14
13
12
11
10
1A 1
2
3
4
5
6
7
2A
2B
2Y
GND
3B
3A
3Y
(top view)
1B
1Y
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Operating Ranges (Note)
Characteristics Symbol Rating Unit
Supply voltage VCC 2.0 to 5.5 V
Input voltage VIN 0 to 5.5 V
Output voltage VOUT 0 to VCC V
Operating temperature Topr 40 to 85 °C
Input rise and fall time dt/dv 0 to 100 (VCC = 3.3 ± 0.3 V)
0 to 20 (VCC = 5 ± 0.5 V) ns/V
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Electrical Characteristics
DC Characteristics
Characteristics Symbol
Test Condition Ta = 25°C
Ta
= 40 to 85°C
Unit
VCC (V) Min Typ. Max Min Max
High-level input
voltage VIH
2.0
3.0 to 5.5
1.50
VCC ×
0.7
1.50
VCC ×
0.7
V
Low-level input
voltage VIL
2.0
3.0 to 5.5
0.50
VCC ×
0.3
0.50
VCC ×
0.3
V
High-level output
voltage VOH VIN
= VIH or VIL
IOH = 50 μA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
V
IOH = 4 mA
IOH = 8 mA
3.0
4.5
2.58
3.94
2.48
3.80
Low-level output
voltage VOL VIN
= VIH or VIL
IOL = 50 μA
2.0
3.0
4.5
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1 V
IOL = 4 mA
IOL = 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
Input leakage
current IIN VIN = 5.5 V or GND 0 to 5.5 ±0.1 ±1.0 μA
Quiescent supply
current ICC VIN = VCC or GND 5.5 2.0 20.0 μA
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AC Characteristics (input: tr = tf = 3 ns)
Characteristics Symbol
Test Condition Ta = 25°C
Ta
= 40 to 85
°C
Unit
VCC (V) CL (pF) Min Typ. Max Min Max
Propagation delay
time
tpLH
tpHL
3.3 ± 0.3
15 7.0 11.0 1.0 13.0
ns
50 9.5 14.5 1.0 16.5
5.0 ± 0.5
15 4.8 6.8 1.0 8.0
50 6.3 8.8 1.0 10.0
Input capacitance CIN 4 10 10 pF
Power dissipation
capacitance CPD (Note)
18 pF
Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current
consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD·VCC·fIN + ICC/4 (per gate)
Noise Characteristics (input: tr = tf = 3 ns)
Characteristics Symbol Test Condition Ta = 25°C Unit
VCC (V) Typ. Limit
Quiet output maximum dynamic VOL VOLP CL = 50 pF 5.0 0.3 0.8 V
Quiet output minimum dynamic VOL VOLV CL = 50 pF 5.0 0.3 0.8 V
Minimum high level dynamic input voltage VIHD CL = 50 pF 5.0 3.5 V
Maximum low level dynamic input voltage VILD CL = 50 pF 5.0 1.5 V
Input Equivalent Circuit
INPUT
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Package Dimensions
Weight: 0.18 g (typ.)
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Package Dimensions
Weight: 0.02 g (typ.)
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