VS-3EJH02HM3
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Revision: 07-May-2018 1Document Number: 94878
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Hyperfast Rectifier, 3 A FRED Pt®
DESIGN SUPPORT TOOLS
FEATURES
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specific for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in snubber, boost,
lighting, piezo-injection, as high frequency rectifiers and
freewheeling diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
Note
(1) Device on PCB with 8 mm x 16 mm soldering lands
PRIMARY CHARACTERISTICS
IF(AV) 3 A
VR200 V
VF at IF0.74 V
trr 30 ns
TJ max. 175 °C
Package SlimSMA (DO-221AC)
Circuit configuration Single
SlimSMA (DO-221AC)
Top View Bottom View
eSMP® Series
Cathode Anode
click logo to get started
Available
Models
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage VRRM 200 V
Average rectified forward current IF(AV) TC = 145 °C (1) 3A
Non-repetitive peak surge current IFSM TJ = 25 °C 85
Operating junction and storage temperatures TJ, TStg -65 to +175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
VBR,
VRIR = 100 μA 200 - -
V
Forward voltage VF
IF = 3 A - 0.86 0.93
IF = 3 A, TJ = 125 °C - 0.74 0.78
Reverse leakage current IR
VR = VR rated - - 2 μA
TJ = 125 °C, VR = VR rated - 1 8
Junction capacitance CTVR = 200 V - 13 - pF
VS-3EJH02HM3
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Revision: 07-May-2018 2Document Number: 94878
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Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time trr
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 26 -
ns
IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 30
TJ = 25 °C
IF = 3 A
dIF/dt = 200 A/μs
VR = 160 V
-18-
TJ = 125 °C - 26 -
Peak recovery current IRRM
TJ = 25 °C - 2.5 - A
TJ = 125 °C - 4 -
Reverse recovery charge Qrr
TJ = 25 °C - 23 - nC
TJ = 125 °C - 50 -
THERMAL - MECHANICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range TJ, TStg -65 - 175 °C
Thermal resistance,
junction to lead RthJL Device mounted on PCB with
8 mm x 16 mm soldering lands -810
°C/W
Thermal resistance,
junction to ambient RthJA Device mounted on PCB with
2 mm x 3.5 mm soldering lands - 91 110
Approximate Weight 0.032 g
0.0011 oz.
Marking device Case style SlimSMA (DO-221AC) 3H2
0.1
1
10
100
0.3 0.6 0.9 1.2 1.5
IF - Instantaneous Forward Current (A)
VF - Forward Voltage Drop (V)
TJ = 125 °C
TJ = 25 °C
TJ = 175 °C
TJ = 150 °C
0.0001
0.001
0.01
0.1
1
10
100
50 100 150 200
I
R
- Reverse Current (μA)
V
R
- Reverse Voltage (V)
25 °C
125 °C
150 °C
175 °C
VS-3EJH02HM3
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Revision: 07-May-2018 3Document Number: 94878
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Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Typical Reverse Recovery vs. dIF/dt
Fig. 7 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see Fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
1
10
100
0 50 100 150 200
VR - Reverse Voltage (V)
CT - Junction Capacitance (pF)
140
145
150
155
160
165
170
175
180
0 0.5 1 1.5 2 2.5 3 3.5
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
Square wave (D = 0.50)
80 % rated VR applied
See note (1)
DC
0
0.5
1
1.5
2
2.5
3
3.5
0 0.6 1.2 1.8 2.4 3 3.6 4.2 4.8
Average Power Loss (W)
Average Forward Current -
I
F(AV) (A)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS limit
5
10
15
20
25
30
35
100 1000
trr (ns)
dIF/dt (A/μs)
125 °C
25 °C
10
20
30
40
50
60
70
100 1000
Qrr (nC)
dIF/dt (A/μs)
125 °C
25 °C
VS-3EJH02HM3
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Revision: 07-May-2018 4Document Number: 94878
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Fig. 8 - Typical Thermal Impedance ZthJL Junction-to-Lead
Fig. 9 - Typical Thermal Impedance ZthJA Junction-to-Ambient
Fig. 10 - Reverse Recovery Waveform and Definitions
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
ZthJL - Thermal Impedance
Junction to Lead (°C/W)
t1- Rectangular Pulse Duration (s)
ZthJL
1
10
100
0.001 0.01 0.1 1 10 100
ZthJA - Thermal Impedance
Junction to Ambient (°C/W)
t1- Rectangular Pulse Duration (s)
ZthJA
Q
rr
0.5 I
RRM
di
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
di
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve dened by trr
and IRRM
trr x IRRM
2
Qrr =
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
VS-3EJH02HM3
www.vishay.com Vishay Semiconductors
Revision: 07-May-2018 5Document Number: 94878
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-3EJH02HM3/6A 3500 3500 7"diameter plastic tape and reel
VS-3EJH02HM3/6B 14 000 14 000 13"diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95571
Part marking information www.vishay.com/doc?95562
Packaging information www.vishay.com/doc?88869
SPICE model www.vishay.com/doc?96050
2- Current rating (3 = 3 A)
3- Circuit configuration:
4- J = SlimSMA package
5- Process type,
H = hyperfast recovery
6- Voltage code (02 = 200 V)
- H = AEC-Q101 qualified
7
- M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
8
Device code
51 32 4 6 87
VS- 3 E J H 02 M3H
1- Vishay Semiconductors product
E = single diode
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 21-Jul-14 1Document Number: 95571
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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DO-221AC (SlimSMA)
DIMENSIONS in inches (millimeters)
Cathode Band
0.106 (2.70)
0.098 (2.50)
0.047 (1.20)
0.030 (0.75)
0.047 (1.20)
MIN.
0.047 (1.20)
MIN.
0.123 (3.12) MAX.
0.217 (5.52) REF.
0.060 (1.52)
MIN.
0.057 (1.45)
0.049 (1.25)
0.039 (1.00)
0.035 (0.90)
0.012 (0.30)
0.006 (0.15)
0.171 (4.35)
0.163 (4.15)
0.211 (5.35)
0.199 (5.05)
Typ.: 0.019 (0.48)
Mounting Pad Layout
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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