28/11/08 DB92008
APPROVALS
UL recognised, File No. E91231
Package Code " JJ "
'X' SPECIFICATION APPROVALS
H11G1X VDE 0884 in 3 available lead form :
- STD
- G form
- SMD approved to CECC 00802
DESCRIPTION
The H11G_ series are optically coupled isolators
consisting of an infrared light emitting diode and a
high voltage NPN silicon photo darlington which
has an integral base-emitter resistor to optimise
switching speed and elevated temperature
characteristics in a standard 6pin dual in line plastic
package.
FEATURES
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
T ape&reel - add SMT&R after part no.
High Isolation V oltage (5.3kVRMS ,7.5kVPK )
High Current Transfer Ratio ( 1000% min)
High BVCEO (H11G1 - 100V min.)
Low collector dark current :-
100nA max. at 80V VCE
Low input current 1mA IF
APPLICATIONS
Modems
Copiers, facsimiles
Numerical control machines
Signal transmission between systems of
different potentials and impedances
HIGH VOLTAGE DARLINGTON
OUTPUT OPTICALLY COUPLED
ISOLATOR
0.26
0.5
7.0
6.0
1.2
7.62
3.0
13°
Max
3.35
4.0
3.0
2.54
7.62
6.62
0.5
1
34
6
25
OPTION G
7.62
SURFACE MOUNT
OPTION SM
10.16
0.26
ISOCOM COMPONENTS LTD
Unit 25B, Park V iew Road West,
Park V iew Industrial Estate, Brenda Road
Hartlepool, TS25 1UD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
10.46
9.86
0.6
0.1 1.25
0.75
H11G1, H11G2, H11G3
H11G1X
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage T emperature -40°C to + 125°C
Operating Temperature -25°C to + 100°C
Lead Soldering T emperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse V oltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter V oltage BVCEO
H11G3, H11G2, H11G1 55, 80, 100V
Collector-base V oltage BVCBO
H11G3, H11G2, H11G1 55, 80, 100V
Emitter-baseV oltage BVEBO 6V
Collector Current 150mA
Power Dissipation 300mW
POWER DISSIPATION
T otal Power Dissipation 350mW
Dimensions in mm
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (V F) 1.2 1.5 V IF = 10mA
Reverse Current (IR)10μAV
R = 4V
Output Collector-emitter Breakdown (BVCEO )
H11G1 100 V IC = 1mA
H11G2 80 V IC = 1mA
H11G3 55 V IC = 1mA
Collector-base Breakdown (BVCBO )
H11G1 100 V IC = 100μA
H11G2 80 V IC = 100μA
H11G3 55 V IC = 100μA
Emitter-base Breakdown (BVEBO )6 V I
E = 0.1mA
Collector-emitter Dark Current (ICEO )
H11G1 100 nA VCE = 80V
H11G2 100 nA VCE = 60V
H11G3 100 nA VCE = 30V
Coupled Collector Output Current ( IC )
H11G1, H11G2 100 mA 10mA IF , 1.2V VCE
H11G1, H11G2 5 mA 1mA IF , 5V VCE
H11G3 2 mA 1mA IF , 5V VCE
Collector-emitter Saturation Voltage VCE(SAT)
H11G1, H11G2 1.0 V 1mA IF , 1mA IC
H11G1, H11G2 1.2 V 16mA IF , 50mA IC
H11G3 1.2 V 20mA IF , 50mA IC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 1011 ΩVIO = 500V (note 1)
Input-output Capacitance Cf 0.6 pF V = 0, f =1MHz
Response time (Rise), tr 1 0 0 μsI
C= 20mA, VCE = 2V ,
Response time (Fall), tf 2 0 μsR
L = 100Ω
28/11/08
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
Input
Output 10%
90%
10%
90%
toff
tr
ton
tf
Output
VCC
IF = 10mA
Input
FIGURE 1
100Ω
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
DB92008
28/11/08
0 1 2 3 4 5 6
0.01
0.1
Collector-emitter voltage VCE ( V )
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Normalized Output Current vs.
Collector-emitter Voltage
Collector dark current ICEO (nA)
Collector Dark Current vs.
Ambient Temperature
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
100
0
Collector power dissipation PC (mW)
Collector Power Dissipation vs. Ambient Temperature
50
0.1 1.0 10 100
Input current IF (mA)
Normalized Output Current vs.
Input Current
0.01
0.1
1.0
10
1.0
10
100
Normalized output current
IF = 1mA
10mA
50mA
1
10
100
1k
10k
100k
150
200
250
1.0
Normalized output current
Normalized Output Current vs.
Ambient Temperature
10
-50 -25 0 25 50 75 100
Ambient temperature TA ( °C )
Ambient temperature TA ( °C )
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Forward Current vs. Ambient Temperature
Forward current IF (mA)
70
80
Normalized to
IF = 1mA
(300μs pulse),
VCE = 5V
10mA
IF = 1mA
50mA
Normalized to
IF = 1mA
(300μs pulse),
VCE = 5V
TA = 25 °C
0.01
Normalized output current
50V
VCE
VCE = 80V
VCE = 10V
0.1
100
100
Normalized to
IF = 1mA
(300μs pulse),
VCE = 5V
TA = 25 °C
DB92008
