SURFACE MOUNT SILICON ZENER DIODES
As Indicated below with Cathode Band
ABSOLUTE MAXIMUM RATINGS
Maximum Forward Voltage Drop @ IF= 10mA
* Mounted on 5.0mm
( 0.13mm thick) land areas
** Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum
ELECTRICAL CHARACTERISTICS (T
=25°C unless specified otherwise) V
@ 10mA <0.9V
IR @ VR
max max max max
4.52 95 5.0 500 1.0 5.0 1.0
4.94 78 5.0 500 1.0 5.0 2.0
5.36 60 5.0 480 1.0 0.1 0.8
5.88 40 5.0 400 1.0 0.1 1.0
6.51 10 5.0 200 1.0 0.1 2.0
7.14 85.0 150 1.0 0.1 3.0
7.88 75.0 50 1.0 0.1 5.0
8.61 75.0 50 1.0 0.1 6.0
9.56 10 5.0 50 1.0 0.1 7.0
10.50 15 5.0 70 1.0 0.1 7.5
11.55 20 5.0 70 1.0 0.1 8.5
12.60 20 5.0 90 1.0 0.1 9.0
13.65 25 5.0 110 1.0 0.1 10
15.75 30 5.0 110 1.0 0.1 11 WL
16.80 40 5.0 170 1.0 0.1 12 WM
18.90 50 5.0 170 1.0 0.1 14 WN
21.00 50 5.0 220 1.0 0.1 15 WO
23.10 55 5.0 220 1.0 0.1 17 WP
25.20 80 5.0 220 1.0 0.1 18 WR
28.35 80 5.0 250 1.0 0.1 20 WS
31.50 80 5.0 250 1.0 0.1 22.5 WT
34.65 80 5.0 250 1.0 0.1 25 WU
37.80 90 5.0 250 1.0 0.1 27 WW
40.95 90 5.0 300 1.0 0.1 29 WX
BZT52C4V3S_39S Rev200105E
BZT52C 4V3S to 39S
WI
WK
WF
WG
28.50
20.90
22.80
37.05
11.40
12.35
14.25
25.65
15.20
17.10
19.00
BZT52C 30S
4.85
5.32
5.89
6.46
7.13
7.79
8.65
9.50
10.45
BZT52C 20S
BZT52C 22S
BZT52C 24S
BZT52C 27S
°C
2.0
Tj
A
Power Dissipation @ 25ºC
Peak Forward Surge Current, 8.3ms Single
Half Sine-WaveSuperimposed on Rated Load
Zener Impedance
Current
- 55 to +150
VF
D
**IFSM
(V) ZZT @ IZT
min
Operating Junction and Storage Temperature
W8
WE
Marking
Code
Zener Voltage
W9
WA
WB
WC
WD
4.47
0.9
V
4.09 W7
ZZK @ IZK
BZT52C 8V2S
BZT52C 33S 31.35
VZ @ IZT
Device #
BZT52C 4V3S
BZT52C 6V2S
BZT52C 6V8S
BZT52C 9V1S
BZT52C 10S
BZT52C 4V7S
BZT52C 5V1S
BZT52C 5V6S
BZT52C 7V5S
BZT52C 36S 34.20
BZT52C 39S
WHBZT52C 11S
BZT52C 12S
BZT52C 13S
BZT52C 15S
BZT52C 16S
BZT52C 18S
Continental Device India Limited Data Sheet Page 1 of 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company