Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 * TrenchFET(R) Power MOSFETs: 1.8 V Rated rDS(on) () ID (A) 0.052 at VGS = - 4.5 V 3.5 0.071 at VGS = - 2.5 V 3 RoHS* 0.108 at VGS = - 1.8 V 2 COMPLIANT Pb-free Available TO-236 (SOT-23) G 1 S 2 3 D Top View Si2305DS (A5)* *Marking Code Ordering Information: Si2305DS-T1 Si2305DS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS -8 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150 C) TA = 25 C TA = 70 C Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b TA = 25 C TA = 70 C V 3.5 ID 2.8 IDM 12 IS - 1.6 A 1.25 PD W 0.8 TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Symbol t 5 sec Steady State RthJA Typical Maximum 100 130 Unit C/W Notes: a. Surface Mounted on FR4 Board. b. t 5 sec. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70833 S-61190-Rev. D, 03-Jul-06 www.vishay.com 1 Si2305DS Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Symbol Test Conditions Limits Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS = 0 V, ID = - 10 A -8 VGS(th) VDS = VGS, ID = - 250 A - 0.45 IGSS VDS = 0 V, VGS = 8 V 100 VDS = - 8 V, VGS = 0 V -1 VDS = - 8 V, VGS = 0 V, TJ = 55 C - 10 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-Resistancea rDS(on) VDS - 5 V, VGS = - 4.5 V -6 VDS - 5 V, VGS = - 2.5 V -3 - 0.8 0.044 0.052 VGS = - 2.5 V, ID = - 3 A 0.060 0.071 VGS = - 1.8 V, ID = - 2 A 0.087 0.108 8.5 gfs VDS = - 5 V, ID = - 3.5 A Diode Forward Voltage VSD IS = - 1.6 A, VGS = 0 V nA A A VGS = - 4.5 V, ID = - 3.5 A Forward Transconductancea V S - 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs 10 VDS = - 4 V, VGS = - 4.5 V, ID - 3.5 A 15 nC 2 Gate-Drain Charge Qgd 2 Input Capacitance Ciss 1245 Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = - 4 V, VGS = 0 V, f = 1 MHz pF 375 210 b Switching Turn-On Time Turn-Off Time td(on) tr td(off) VDD = - 4 V, RL = 4 ID - 1.0 A, VGEN = - 4.5 V, RG = 6 tf 13 20 25 40 55 80 19 35 ns Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW 300 s, duty cycle 2 %. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70833 S-61190-Rev. D, 03-Jul-06 Si2305DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless noted 12 12 VGS = 4.5 thru 2.5 V TC = - 55 C 2V 10 10 I D - Drain Current (A) I D - Drain Current (A) 25 C 8 6 1.5 V 4 8 125 C 6 4 2 2 1, 0.5 V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.30 2000 0.25 1600 C - Capacitance (pF) r DS(on) - On-Resistance () 0 0.20 0.15 VGS = 1.8 V 0.10 VGS = 2.5 V 2.5 Ciss 1200 800 Coss 400 0.05 Crss VGS = 4.5 V 0 0 0 2 4 6 8 10 0 12 4 6 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 8 1.4 VDS = 4 V ID = 3.5 A 4 r DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 2 3 2 VGS = 4.5 V ID = 3.5 A 1.2 1.0 0.8 1 0 0 2 4 6 Qg - T otal Gate Charge (nC) Gate Charge Document Number: 70833 S-61190-Rev. D, 03-Jul-06 8 10 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si2305DS Vishay Siliconix 30 0.5 10 0.4 r DS(on) - On-Resistance () I S - Source Current (A) TYPICAL CHARACTERISTICS 25 C, unless noted TJ = 150 C TJ = 25 C 1 0.1 0.00 0.3 0.2 ID = 3.5 A 0.1 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0 1.2 4 6 8 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 12 0.4 10 ID = 250 A 0.3 8 0.2 Power (W) V GS(th) Variance (V) 2 VGS - Gate-to-Source Voltage (V) 0.1 6 4 0.0 TA = 25 C 2 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 TJ - Temperature (C) 125 150 0 0.01 0.1 10 1 Time (sec) 100 500 Single Pulse Power Threshold Voltage 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 130 C/W 0.02 3. T JM - T A = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 500 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70833. www.vishay.com 4 Document Number: 70833 S-61190-Rev. D, 03-Jul-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1