Vishay Siliconix
Si2305DS
Document Number: 70833
S-61190-Rev. D, 03-Jul-06
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1
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
FEATURES
• TrenchFET® Power MOSFETs: 1.8 V Rated
PRODUCT SUMMARY
VDS (V) rDS(on) (Ω)I
D (A)
- 8
0.052 at VGS = - 4.5 V ± 3.5
0.071 at VGS = - 2.5 V ± 3
0.108 at VGS = - 1.8 V ± 2
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Si2305DS (A5)*
*Marking Code
Ordering Information: Si2305DS-T1
Si2305DS-T1-E3 (Lead (Pb)-free)
Notes:
a. Surface Mounted on FR4 Board.
b. t ≤ 5 sec.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 8 V
Gate-Source Voltage VGS ± 8
Continuous Drain Current (TJ = 150 °C) TA = 25 °C ID
± 3.5
A
TA = 70 °C ± 2.8
Pulsed Drain Current IDM ± 12
Continuous Source Current (Diode Conduction)a, b IS- 1.6
Maximum Power Dissipationa, b TA = 25 °C PD
1.25 W
TA = 70 °C 0.8
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientat ≤ 5 sec RthJA
100 °C/W
Steady State 130
Available
Pb-free
RoHS*
COMPLIANT
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Document Number: 70833
S-61190-Rev. D, 03-Jul-06
Vishay Siliconix
Si2305DS
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions
Limits Unit
Min Typ Max
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = - 10 µA - 8 V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.45 - 0.8
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 8 V, VGS = 0 V - 1 µA
VDS = - 8 V, VGS = 0 V, TJ = 55 °C - 10
On-State Drain CurrentaID(on) VDS ≤ - 5 V, VGS = - 4.5 V - 6 A
VDS ≤ - 5 V, VGS = - 2.5 V - 3
Drain-Source On-ResistancearDS(on)
VGS = - 4.5 V, ID = - 3.5 A 0.044 0.052
Ω
VGS = - 2.5 V, ID = - 3 A 0.060 0.071
VGS = - 1.8 V, ID = - 2 A 0.087 0.108
Forward Transconductanceagfs VDS = - 5 V, ID = - 3.5 A 8.5 S
Diode Forward Voltage VSD IS = - 1.6 A, VGS = 0 V - 1.2 V
Dynamicb
Total Gate Charge Qg
VDS = - 4 V, VGS = - 4.5 V, ID ≅ - 3.5 A
10 15
nCGate-Source Charge Qgs 2
Gate-Drain Charge Qgd 2
Input Capacitance Ciss
VDS = - 4 V, VGS = 0 V, f = 1 MHz
1245
pFOutput Capacitance Coss 375
Reverse Transfer Capacitance Crss 210
Switchingb
Tur n - O n T i m e td(on)
VDD = - 4 V, RL = 4 Ω
ID ≅ - 1.0 A, VGEN = - 4.5 V, RG = 6 Ω
13 20
ns
tr25 40
Turn-Off Time td(off) 55 80
tf19 35
Document Number: 70833
S-61190-Rev. D, 03-Jul-06
www.vishay.com
3
Vishay Siliconix
Si2305DS
TYPICAL CHARACTERISTICS 25 °C, unless noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
2
4
6
8
10
12
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS = 4.5 thru 2.5 V
1, 0.5 V
1.5 V
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)I
D
2 V
0
0.05
0.10
0.15
0.20
0.25
0.30
024681012
VGS = 4.5 V
VGS = 2.5 V
- On-Resistance (Ω)rDS(on)
ID - Drain Current (A)
VGS = 1.8 V
0
1
2
3
4
5
0246810
VDS = 4 V
ID = 3.5 A
- Gate-to-Source Voltage (V)
Qg - T otal Gate Charge (nC)
VGS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
12
0 0.5 1.0 1.5 2.0 2.5
25 °C
TC = - 55 °C
125 °C
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)ID
0
400
800
1200
1600
2000
02468
Crss
Coss
Ciss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 3.5 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-Resistance r
DS(on)
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Document Number: 70833
S-61190-Rev. D, 03-Jul-06
Vishay Siliconix
Si2305DS
TYPICAL CHARACTERISTICS 25 °C, unless noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?70833.
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0 1.2
0.1
10
30
0.00 0.2 0.4 0.6 0.8
TJ = 25 °C
TJ = 150 °C
VSD - Source-to-Drain Voltage (V)
- Source Current (A)IS
1
- 0.2
- 0.1
0.0
0.1
0.2
0.3
0.4
- 50 - 25 0 25 50 75 100 125 150
ID = 250 µA
Variance (V)VGS(th)
TJ
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0
0.1
0.2
0.3
0.4
0.5
02468
ID = 3.5 A
- On-Resistance (Ω)rDS(on)
VGS - Gate-to-Source Voltage (V)
0.01
0
1
6
12
2
4
10 5000.1
Power (W)
Time (sec)
8
10
100
TA = 25 °C
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
2
1
0.1
0.01 10- 3 10- 2 1 10 50010- 1
10- 4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
100
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 130 °C/W
3. TJM - T A = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
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Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
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