Semiconductor Components Industries, LLC, 2003
April, 2003 - Rev. 4 1Publication Order Number:
MBR1100/D
MBR1100
Preferred Device
Axial Lead Rectifier
. . . employing the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low-voltage,
high-frequency inverters, free wheeling diodes, and polarity
protection diodes.
Low Reverse Current
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Guard-Ring for Stress Protection
Low Forward Voltage
150°C Operating Junction Temperature
High Surge Capacity
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16 from case
Shipped in plastic bags, 1000 per bag
Available Tape and Reeled, 5000 per reel, by adding a “RL’ suffix to
the part number
Polarity: Cathode Indicated by Polarity Band
Marking: B1100
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100 V
Average Rectified Forward Current
(VR(equiv) 0.2 VR(dc), RJA =
50°C/W, P.C. Board Mounting, see
Note 1, TA = 120°C)
IO1.0 A
Non-Repetitive Peak
Surge Current (Surge Applied at
Rated Load Conditions Halfwave,
Single Phase, 60 Hz)
IFSM 50 A
Operating and Storage Junction
Temperature Range TJ, Tstg -65 to +150 °C
Voltage Rate of Change (Rated VR) dv/dt 10 V/ns
Device Package Shipping
ORDERING INFORMATION
AXIAL LEAD
CASE 59-10
DO-41
PLASTIC
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
100 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
MBR1100 Axial Lead 1000 Units/Bag
MBR1100RL Axial Lead 5000/Tape & Reel
MARKING DIAGRAM
MBR
1100
MBR1100 = Device Code
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MBR1100
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THERMAL CHARACTERISTICS (See Note 2)
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RJA See Note 1 °C/W
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted)
Characteristic Symbol Max Unit
Maximum Instantaneous Forward Voltage *
(iF = 1 A, TL = 25°C)
(iF = 1 A, TL = 100°C)
VF0.79
0.69
Volt
Maximum Instantaneous Reverse Current @ Rated dc Voltage *
(TL = 25°C)
(TL = 100°C)
iR0.5
5.0
mA
* Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current
Figure 3. Current Derating
(Mounting Method 3 per Note 1) Figure 4. Power Dissipation
0.6 0.90
vF, INSTANTANEOUS VOLTAGE (VOLTS)
20
10
2.0
5.0
1.0
VR, REVERSE VOLTAGE (VOLTS)
60 900
0.2
0.04
0.02
0.01
120 1600
TA, AMBIENT TEMPERATURE (°C)
4.0
3.0
2.0
1.0
0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
1.00
4.0
3.0
2.0
1.0
0
2.0140
iF, INSTANTANEOUS FORWARD CURRENT (AMPS
)
I
I
PF(AV), AVERAGE POWER DISSIPATION (WATTS)
0.5
0.2
0.1
0.30.1 0.2 0.4 0.5 0.7 0.8 70 8010 20 30 40 50
0.1
0.4
1.0
20 40 60 80 100 3.0 4.0 5.0
0.05
0.02
1.1 1.41.0 1.2 1.3 100
, REVERSE CURRENT ( A)
R
4.0
2.0
10
20
100
40
200
1 K
400
200180
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
SQUARE WAVE
dc
SQUARE WAVE
dc
TJ = 150°C
100°C
25°C
TJ = 150°C
125°C
100°C
The curves shown are typical for the highest voltage
device i n the voltage grouping. T ypical reverse current for
lower voltage selections can be estimated from these
same curves if VR is sufficiently below rated VR.
MBR1100
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Figure 5. Typical Capacitance
20 400
VR, REVERSE VOLTAGE (VOLTS)
150
50
40
30
20
15
30
C, CAPACITANCE (pF)
50 10060
100
10 70 80 90
70
60
90
80
TJ = 25°C
fTEST = 1 MHz
NOTE 1 — MOUNTING DATA:
Data shown for thermal resistance junction-to-ambient
(RJA) for the mounting shown is to be used as a typical
guideline values for preliminary engineering or in case the
tie point temperature cannot be measured.
Typical Values for RJA in Still Air
Mountin
g
Lead Length, L (in)
R
Mo
u
nting
Method 1/8 1/4 1/2 3/4 RJA
1 52 65 72 85 °C/W
2 67 80 87 100 °C/W
3 50 °C/W
Mounting Method 1
P.C. Board with
1-1/2 x 1-1/2
copper surface.
Mounting Method 3
P.C. Board with
1-1/2 x 1-1/2
copper surface.
BOARD GROUND
PLANE
VECTOR PIN MOUNTING
Mounting Method 2
ÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉ
LL
ÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉ
LL
É
É
É
É
L = 3/8
NOTE 2 — THERMAL CIRCUIT MODEL:
(For heat conduction through the leads)
TA(A) TA(K)
TL(A) TC(A) TJTC(K) TL(K)
PD
RS(A) RL(A) RJ(A) RJ(K) RL(K) RS(K)
Use of the above model permits junction to lead thermal
resistance for any mounting configuration to be found. For
a given total lead length, lowest values occur when one side
of the rectifier is brought as close as possible to the heat sink.
Terms in the model signify:
TA = Ambient Temperature TC = Case Temperature
TL = Lead Temperature TJ = Junction Temperature
RS = Thermal Resistance, Heat Sink to Ambient
RL = Thermal Resistance, Lead to Heat Sink
RJ = Thermal Resistance, Junction to Case
PD = Power Dissipation
(Subscripts A and K refer to anode and cathode sides,
respectively.) Values for thermal resistance components are:
RL = 100°C/W/in typically and 120°C/W/in maximum.
RθJ = 36°C/W typically and 46°C/W maximum.
NOTE 3 — HIGH FREQUENCY OPERATION:
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction
diode forward and reverse recovery transients due to
minority carrier injection and stored charge. Satisfactory
circuit analysis work may be performed by using a model
consisting of an ideal diode in parallel with a variable
capacitance. (See Figure 5)
Rectification efficiency measurements show that
operation will be satisfactory up to several megahertz. For
example, relative waveform rectification efficiency is
approximately 70 percent at 2 MHz, e.g., the ratio of dc
power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine
wave inputs. However, in contrast to ordinary junction
diodes, the loss in waveform efficiency is not indicative of
power loss: it is simply a result of reverse current flow
through the diode capacitance, which lowers the dc output
voltage.
MBR1100
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PACKAGE DIMENSIONS
CASE 59-10
ISSUE S
AXIAL LEAD, DO-41
B
D
K
K
F
F
ADIM MIN MAX MIN MAX
MILLIMETERSINCHES
A4.10 5.200.161 0.205
B2.00 2.700.079 0.106
D0.71 0.860.028 0.034
F−−− 1.27−−− 0.050
K25.40 −−−1.000 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 59−04 OBSOLETE, NEW STANDARD 59−09.
4. 59−03 OBSOLETE, NEW STANDARD 59−10.
5. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO−41 OUTLINE SHALL APPLY
6. POLARITY DENOTED BY CATHODE BAND.
7. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
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Phone: 81-3-5773-3850
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
MBR1100/D
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