MURB1610CT / MURB1620CT 16A SURFACE MOUNT SUPER-FAST RECTIFIER SPICE MODELS: MURB1610CT MURB1620CT Features * * * * * * * Glass Passivated Die Construction Diffused Junction Super-Fast Recovery Times for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 100A Peak Low Reverse Leakage Current Plastic Material: UL Flammability Classification Rating 94V-0 E * * * G Dim Min Max 4 H A 9.65 10.69 B 14.60 15.88 C 0.51 1.14 D 2.29 2.79 J B 1 2 3 M Mechanical Data * * D2PAK A D Case: Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Weight: 1.7 grams (approx.) Mounting Position: Any K C PIN 1 L PIN 2 & 4 PIN 3 E 4.37 4.83 G 1.14 1.40 H 1.14 1.40 J 8.25 9.25 K 0.30 0.64 L 2.03 2.92 M 2.29 2.79 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Symbol MURB1610CT MURB1620CT Unit VRRM VRWM VR 100 200 V VR(RMS) 70 140 V IO 16 A Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 100 A Forward Voltage VFM 0.975 V IRM 5.0 250 mA trr 25 ns Average Rectified Output Current @ TC = 125C Peak Reverse Current at Rated DC Blocking Voltage @ IF = 8.0A @TA = 25C @ TA = 150C Maximum Recovery Time (Note 2) Typical Junction Capacitance (Note 3) Typical Thermal Resistance Junction to Case Operating and Storage Temperature Range Notes: Cj 85 pF RqJC 1.5 C/W Tj, TSTG -65 to +150 C 1. Unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink. 2. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. 3. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC. DS14005 Rev. A1-2 1 of 2 www.diodes.com MURB1610CT/MURB1620CT a Diodes Incorporated IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD CURRENT (A) 20 16 12 8 4 Resistive or inductive load 0 100 125 150 100 10 1.0 0.1 0.2 175 1.0 1.4 400 150 Tj = 25C 8.3ms single half-sine-wave JEDEC method 125 Cj, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 0.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics per Element TC, CASE TEMPERATURE (C) Fig. 1 Forward Current Derating Curve 100 75 50 100 25 10 0 1 10 0.1 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current IR, INSTANTANEOUS REVERSE CURRENT (mA) 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance per Element 100 TC = 100C 10 TC = 75C 1.0 0.1 TC = 25C 0.01 0 40 80 120 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS14005 Rev. A1-2 2 of 2 www.diodes.com MURB1610CT/MURB1620CT