1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz
1.2 Features
■Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an IDq of 950 mA:
◆Output power = 30 W (AV)
◆Gain=16dB
◆Efficiency = 31 %
◆IMD3 = −37 dBc
◆ACPR = −40 dBc
■Easy power control
■Integrated ESD protection
■Excellent ruggedness
■High efficiency
■Excellent thermal stability
■Designed for broadband operation (2000 MHz to 2200 MHz)
■Internally matched for ease of use
BLC6G22-130; BLC6G22LS-130
UHF power LDMOS transistor
Rev. 01 — 30 January 2006 Objective data sheet
Table 1: Typical performance
RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation f VDS PL(AV) GpηDIMD3 ACPR
(MHz) (V) (W) (dB) (%) (dBc) (dBc)
2-carrier W-CDMA 2110 to 2170 28 30 16 31 −37[1] −40[1]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
BLC6G22-130_6G22LS-130_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet Rev. 01 — 30 January 2006 2 of 9
Philips Semiconductors BLC6G22-130; BLC6G22LS-130
UHF power LDMOS transistor
1.3 Applications
■RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range.
2. Pinning information
[1] Connected to flange
3. Ordering information
4. Limiting values
Table 2: Pinning
Pin Description Simplified outline Symbol
BLC6G22-130 (SOT895-1)
1 drain
2 gate
3 source [1]
BLC6G22LS-130 (SOT896-1)
1 drain
2 gate
3 source [1]
3
2
1
sym112
1
3
2
3
2
1
sym112
1
3
2
Table 3: Ordering information
Type number Package
Name Description Version
BLC6G22-130 - plastic flanged cavity package; 2 mounting slots; 2 leads SOT895-1
BLC6G22LS-130 - plastic earless flanged cavity package; 2 leads SOT896-1
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +13 V
IDdrain current - <tbd> A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 225 °C
BLC6G22-130_6G22LS-130_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet Rev. 01 — 30 January 2006 3 of 9
Philips Semiconductors BLC6G22-130; BLC6G22LS-130
UHF power LDMOS transistor
5. Thermal characteristics
6. Characteristics
7. Application information
7.1 Ruggedness in class-AB operation
The BLC6G22-130 and BLC6G22LS-130 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 950 mA; PL = 130 W (CW); f = 2170 MHz.
Table 5: Thermal characteristics
Symbol Parameter Conditions Type Min Typ Max Unit
Rth(j-case) thermal resistance
from junction to case Tcase =80°C;
PL=30W BLC6G22-130 <tbd> <tbd> <tbd> K/W
BLC6G22LS-130 <tbd> <tbd> <tbd> K/W
Table 6: Characteristics
T
j
= 25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown
voltage VGS =0V; I
D= 0.5 mA 65 - - V
VGS(th) gate-source threshold voltage VDS =10V;I
D= 180 mA <tbd> 2<tbd> V
VGSq gate-source quiescent voltage VDS =28V;I
D= 950 mA <tbd> <tbd> <tbd> V
IDSS drain leakage current VGS =0V; V
DS =28V - - 5 µA
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V 27 33 - A
IGSS gate leakage current VGS = 13 V; VDS = 0 V - - 450 nA
gfs forward transconductance VDS =10V; I
D=9A - 13 - S
RDS(on) drain-source on-state
resistance VGS =V
GS(th) + 3.75 V;
ID= 5.25 A - 0.085 <tbd> Ω
Crs feedback capacitance VGS =0V; V
DS =28V;
f= 1MHz -<tbd> -pF
Table 7: Application information
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
1
= 2112.5 MHz; f
2
= 2122.5 MHz; f
3
= 2157.5 MHz; f
4
= 2167.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 950 mA; T
case
= 25
°
C; unless otherwise specified; in a
class-AB production test circuit
Symbol Parameter Conditions Min Typ Max Unit
PL(AV) average output power - 30 - W
Gppower gain PL(AV) = 30 W <tbd> 16 - dB
IRL input return loss PL(AV) = 30 W - −9<tbd> dB
ηDdrain efficiency PL(AV) = 30 W <tbd> 31 - %
IMD3 third order intermodulation distortion PL(AV) = 30 W - −37 <tbd> dBc
ACPR adjacent channel power ratio PL(AV) = 30 W - −40 <tbd> dBc
BLC6G22-130_6G22LS-130_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet Rev. 01 — 30 January 2006 4 of 9
Philips Semiconductors BLC6G22-130; BLC6G22LS-130
UHF power LDMOS transistor
8. Package outline
Fig 1. Package outline SOT895-1
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT895-1
SOT895-1
05-06-22
05-06-28
DIMENSIONS (mm are the original dimensions)
Plastic flanged cavity package; 2 mounting slots; 2 leads
0 5 10 mm
scale
UNIT A
mm
Db
12.83
12.57 0.17
0.14 19.9
19.7 9.78
9.53 19.94
18.92 9.91
9.65
4.1
3.3
c U2
0.6
w2
F
1.14
0.89
U1
34.16
33.91
L
5.3
4.5
p
3.38
3.12
EE
1
9.53
9.27
inches 0.505
0.495 0.0065
0.0055 0.785
0.775
D1
20.42
20.12
0.804
0.792 0.385
0.375 0.785
0.745 0.390
0.380
0.161
0.130 0.023
0.25
w1
0.01
27.94
1.100
0.045
0.035 1.345
1.335
0.209
0.177 0.133
0.123
Q
1.75
1.50
0.069
0.059
q
0.375
0.365
H
A
D1
D
F
B
C
A
q
AB
w1 M M M
Cw2 M M
U1
L
p
U2
H
b
1
2
3
E
E1
Q
c
BLC6G22-130_6G22LS-130_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet Rev. 01 — 30 January 2006 5 of 9
Philips Semiconductors BLC6G22-130; BLC6G22LS-130
UHF power LDMOS transistor
Fig 2. Package outline SOT896-1
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT896-1
SOT896-1
05-06-22
05-06-28
DIMENSIONS (mm are the original dimensions)
Plastic earless flanged cavity package; 2 leads
0 5 10 mm
scale
UNIT A
mm
Db
12.83
12.57 0.17
0.14 19.9
19.7 9.78
9.53 19.94
18.92 9.91
9.65
4.1
3.3
c U2
0.6
w2
F
1.14
0.89
U1
20.70
20.45
L
5.3
4.5
Q
1.75
1.50
EE
1
9.53
9.27
inches 0.505
0.495 0.0065
0.0055 0.785
0.775
D1
20.42
20.12
0.804
0.792 0.385
0.375 0.785
0.745 0.390
0.380
0.161
0.130 0.023
0.045
0.035 0.815
0.805
0.209
0.177 0.069
0.059
0.375
0.365
H
A
D1
D
F
D
3
E
E1
Q
c
Dw2 M M
U1
L
U2
H
b
1
2
BLC6G22-130_6G22LS-130_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet Rev. 01 — 30 January 2006 6 of 9
Philips Semiconductors BLC6G22-130; BLC6G22LS-130
UHF power LDMOS transistor
9. Abbreviations
Table 8: Abbreviations
Acronym Description
3GPP Third Generation Partnership Project
CCDF Complementary Cumulative Distribution Function
CW Continuous Wave
DPCH Dedicated Physical CHannel
LDMOS Laterally Diffused Metal Oxide Semiconductor
PAR Peak-to-Average power Ratio
PDPCH transmission Power of the Dedicated Physical CHannel
RF Radio Frequency
VSWR Voltage Standing Wave Ratio
W-CDMA Wideband Code Division Multiple Access
BLC6G22-130_6G22LS-130_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet Rev. 01 — 30 January 2006 7 of 9
Philips Semiconductors BLC6G22-130; BLC6G22LS-130
UHF power LDMOS transistor
10. Revision history
Table 9: Revision history
Document ID Release date Data sheet status Change notice Doc. number Supersedes
BLC6G22-130_6G22
LS-130_1 20060130 Objective data sheet - - -
Philips Semiconductors BLC6G22-130; BLC6G22LS-130
UHF power LDMOS transistor
BLC6G22-130_6G22LS-130_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet Rev. 01 — 30 January 2006 8 of 9
11. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
14. Trademarks
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
15. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level Data sheet status[1] Product status[2] [3] Definition
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.Date of release: 30 January 2006
Document number: BLC6G22-130_6G22LS-130_1
Published in The Netherlands
Philips Semiconductors BLC6G22-130; BLC6G22LS-130
UHF power LDMOS transistor
16. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation. . . . . . . . . . 3
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 4
9 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 6
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 7
11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . . 8
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
15 Contact information . . . . . . . . . . . . . . . . . . . . . 8
