PMEG2005CT,215 - NXP Semiconductors

1. Product profile

1.1 General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in

common cathode configuration with an in tegrated guard ring for stress protec tion,

encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic

package.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.

PMEG2005CT

500 mA low VF dual MEGA Schottky barrier rectifier

Rev. 2 — 22 June 2010 Product data sheet

Average forward current: IF(AV) ≤0.5 A AEC-Q101 qualified

Reverse voltage: VR≤20 V Small SMD plastic package

Low forward voltage

Low voltage rectification Reverse polarity protection

High efficiency DC-to-DC conve rs ion High-speed switching

Switch Mode Power Supply (SMPS) Low power consumption applications

Table 1. Quick reference data

Tj=25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

IF(AV) average forward current square wave;

δ= 0.5;

f = 20 kHz

Tamb ≤100 °C[1] --0.5A

Tsp ≤130 °C--0.5A

VRreverse voltage - - 20 V

VFforward voltage IF= 0.5 A - 360 390 mV

IRreverse current VR=20V - 30 200 μA

Product data sheet Rev. 2 — 22 June 2010 2 of 14

NXP Semiconductors PMEG2005CT

500 mA low VF dual MEGA Schottky barrier rectifier

2. Pinning information

3. Ordering information

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5. Limiting values

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 anode (diode 1)

2 anode (diode 2)

3 common cathode

006aaa438

Table 3. Ordering information

Type number Package

Name Description Version

PMEG2005CT - plastic surface-mounted package; 3 leads SOT23

Table 4. Marking codes

Type number Marking code[1]

PMEG2005CT P8*

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

VRreverse voltage Tj=25°C-20V

IF(AV) average forward current square wave;

δ= 0.5;

f=20kHz

Tamb ≤100 °C[1] -0.5A

Tsp ≤130 °C-0.5A

IFRM repetitive peak forward

current tp≤1 ms;

δ≤0.25 -3.9A

IFSM non-repetitive peak

forward current square wave;

tp=8ms [2] -10A

Product data sheet Rev. 2 — 22 June 2010 3 of 14

NXP Semiconductors PMEG2005CT

500 mA low VF dual MEGA Schottky barrier rectifier

[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.

[2] Tj=25°C prior to surge.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

6. Thermal characteristics

[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse

power losses PR are a significant part of the total power losses.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.

[5] Soldering point of cathode tab.

Per device; one diode loaded

Ptot total power dissipation Tamb ≤25 °C[3] -330mW

[4] -400mW

[1] -460mW

Tjjunction temperature - 150 °C

Tamb ambient temperature −55 +150 °C

Tstg storage temperature −65 +150 °C

Table 5. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per device; one diode loaded

Rth(j-a) thermal resistance from

junction to ambient in free air [1]

[2] - - 375 K/W

[3] - - 310 K/W

[4] - - 270 K/W

Rth(j-sp) thermal resistance from

junction to solder point [5] --60K/W

Product data sheet Rev. 2 — 22 June 2010 4 of 14

NXP Semiconductors PMEG2005CT

500 mA low VF dual MEGA Schottky barrier rectifier

FR4 PCB, standard footprint

Fig 1. Transi ent thermal impedance from junctio n to ambient as a func tion of pulse duration; typical values

FR4 PCB, mounting pad for cathode 1 cm2

Fig 2. Transi ent thermal impedance from junctio n to ambient as a func tion of pulse duration; typical values

006aab533

tp (s)

10−3102103

10110−210−1

102

103

Zth(j-a)

(K/W)

duty cycle =

10.75

0.5

0.33

0.25 0.2

0.1

0.05

0.02 0.01

006aab534

tp (s)

10−3102103

10110−210−1

102

103

Zth(j-a)

(K/W)

duty cycle =

0.75

0.5 0.33

0.25 0.2

0.1 0.05

0.02 0.01

Product data sheet Rev. 2 — 22 June 2010 5 of 14

NXP Semiconductors PMEG2005CT

500 mA low VF dual MEGA Schottky barrier rectifier

7. Characteristics

[1] When switched from IF= 10 mA to IR=10mA; R

L= 100 Ω; measured at IR=1mA.

Ceramic PCB, Al2O3, standard footprint

Fig 3. Transi ent thermal impedance from junctio n to ambient as a func tion of pulse duration; typical values

006aab535

tp (s)

10−3102103

10110−210−1

102

103

Zth(j-a)

(K/W)

duty cycle =

0.75

0.5

0.33

0.25 0.2

0.1 0.05

0.02 0.01

Table 7. Characteristics

Tj=25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per device

VFforward voltage IF= 0.1 mA - 95 130 mV

IF= 1 mA - 155 190 mV

IF= 10 mA - 215 240 mV

IF= 100 mA - 285 330 mV

IF= 500 mA - 360 390 mV

IRreverse current VR=10V - 11 40 μA

VR=20V - 30 200 μA

Cddiode capacitance VR=1V; f=1MHz - 66 80 pF

trr reverse recovery time [1] -22-ns

Product data sheet Rev. 2 — 22 June 2010 6 of 14

NXP Semiconductors PMEG2005CT

500 mA low VF dual MEGA Schottky barrier rectifier

(1) Tj= 150 °C

(2) Tj= 125 °C

(3) Tj=85°C

(4) Tj=25°C

(5) Tj=−40 °C

(1) Tj= 125 °C

(2) Tj=85°C

(3) Tj=25°C

(4) Tj=−40 °C

Fig 4. Forward current as a function of forward

voltage; typical values Fig 5. Reverse current as a function of reverse

voltage; typical values

f=1MHz; T

amb =25°C

Fig 6. Diode capacitance as a function of reverse voltage; typical values

006aab536

VF (V)

0 0.60.40.2

10−2

10−3

10−1

(A)

10−4

(1)

(2)

(3) (4) (5)

006aab537

10−2

10−3

10−4

10−5

10−6

10−7

10−8

(A)

10−9

VR (V)

02015510

(1)

(2)

(3)

(4)

VR (V)

02015510

006aab538

100

125

(pF)

Product data sheet Rev. 2 — 22 June 2010 7 of 14

NXP Semiconductors PMEG2005CT

500 mA low VF dual MEGA Schottky barrier rectifier

Tj= 150 °C

(1) δ=0.1

(2) δ=0.2

(3) δ=0.5

(4) δ=1

Tj= 125 °C

(1) δ=1

(2) δ=0.9

(3) δ=0.8

(4) δ=0.5

Fig 7. Average forwar d po we r diss ipat io n as a

function of average forward cur rent; typical

values

Fig 8. Average reverse power dissipation as a

function of reverse voltage; typical values

FR4 PCB, standard footprint

Tj= 150 °C

(1) δ=1; DC

(2) δ= 0.5; f = 20 kHz

(3) δ= 0.2; f = 20 kHz

(4) δ= 0.1; f = 20 kHz

FR4 PCB, mounting pad for cathode 1 cm2

Tj= 150 °C

(1) δ=1; DC

(2) δ= 0.5; f = 20 kHz

(3) δ= 0.2; f = 20 kHz

(4) δ= 0.1; f = 20 kHz

Fig 9. Average forward current as a function of

ambient temperature ; typi cal values Fig 10. Average forward current as a function of

ambient temperature; typical values

006aab539

IF(AV) (A)

0.0 0.750.500.25

0.10

0.15

0.05

0.20

0.25

PF(AV)

(W)

0.0

(1)

(2)

(3)

(4)

VR (V)

02015510

006aab540

0.2

0.3

0.1

0.4

0.5

PR(AV)

(W)

0.0

(1)

(2)

(4)

(3)

Tamb (°C)

0 50 100 150 1751257525

006aab541

0.25

0.50

0.75

IF(AV)

(A)

0.0

(1)

(2)

(3)

(4)

Tamb (°C)

0 50 100 150 1751257525

006aab542

0.25

0.50

0.75

IF(AV)

(A)

0.0

(1)

(2)

(3)

(4)

Product data sheet Rev. 2 — 22 June 2010 8 of 14

NXP Semiconductors PMEG2005CT

500 mA low VF dual MEGA Schottky barrier rectifier

8. Test information

Ceramic PCB, Al2O3, standard footprint

Tj= 150 °C

(1) δ=1; DC

(2) δ= 0.5; f = 20 kHz

(3) δ= 0.2; f = 20 kHz

(4) δ= 0.1; f = 20 kHz

Tj= 150 °C

(1) δ=1; DC

(2) δ= 0.5; f = 20 kHz

(3) δ= 0.2; f = 20 kHz

(4) δ= 0.1; f = 20 kHz

Fig 11. Average forward current as a function of

ambient temperature ; typi cal values Fig 12. Average forward current as a function of

solder point temperature; typical values

Tamb (°C)

0 50 100 150 1751257525

006aab543

0.25

0.50

0.75

IF(AV)

(A)

0.0

(1)

(2)

(3)

(4)

Tsp (°C)

0 50 100 150 1751257525

006aab544

0.25

0.50

0.75

IF(AV)

(A)

0.0

(1)

(2)

(3)

(4)

(1) IR=1mA

Input signal: reverse pulse rise time tr= 0.6 ns; reverse voltage pulse duration tp= 100 ns; duty cycle δ=0.05

Oscilloscope: rise time tr=0.35ns

Fig 13. Reverse recovery time test circuit and wav eforms

trr

(1)

+ I

output signal

10 %

90 %

input signal

V = V

= 50 ΩI

D.U.T.

= 50 Ω

SAMPLING

OSCILLOSCOPE

mga881

Product data sheet Rev. 2 — 22 June 2010 9 of 14

NXP Semiconductors PMEG2005CT

500 mA low VF dual MEGA Schottky barrier rectifier

The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are

calculated according to the equations: with IM defined as peak current,

at DC, and with IRMS defined as RMS current.

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in auto motive applications.

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Fig 14. Duty cycle definition

006aaa812

duty cycle δ =

IFAV() IMδ×=

RMS IFAV()

=IRMS IMδ×=

Fig 15. Package outline SOT23 (TO-236AB)

04-11-04Dimensions in mm

0.45

0.15

1.9

1.1

0.9

3.0

2.8

2.5

2.1

1.4

1.2

0.48

0.38

0.15

0.09

Table 8. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

3000 10000

PMEG2005CT SOT23 4 mm pitch, 8 mm tape and reel -215 -235

Product data sheet Rev. 2 — 22 June 2010 10 of 14

NXP Semiconductors PMEG2005CT

500 mA low VF dual MEGA Schottky barrier rectifier

11. Soldering

Fig 16. Reflow solderin g foo tprin t SOT23 (TO-236AB)

Fig 17. W ave soldering footprint SOT23 (TO-236AB)

solder lands

solder resist

occupied area

solder paste

sot023_

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_

2.8

4.5

1.4

4.6

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

Product data sheet Rev. 2 — 22 June 2010 11 of 14

NXP Semiconductors PMEG2005CT

500 mA low VF dual MEGA Schottky barrier rectifier

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PMEG2005CT v.2 20100622 Product data sheet - PMEG2005 CT_1

Modifications: •Table 2 “Pinning”: Graphic symbol amended

•Section 13 “Legal information”: updated

PMEG2005CT_1 20090604 Product data sheet - -

Product data sheet Rev. 2 — 22 June 2010 12 of 14

NXP Semiconductors PMEG2005CT

500 mA low VF dual MEGA Schottky barrier rectifier

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

Product specificatio n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

13.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whethe r or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggreg ate and cumulative l iability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semicondu ctors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors product s are not designed,

authorized or warranted to be suit able for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or seve re property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or cu stomer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Custo mers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the applicatio n or use by custo mer’s

third party custo m er(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semicon ductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Producti on This document contains the product specification.

Product data sheet Rev. 2 — 22 June 2010 13 of 14

NXP Semiconductors PMEG2005CT

500 mA low VF dual MEGA Schottky barrier rectifier

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics se ctions of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PMEG2005CT

500 mA low VF dual MEGA Schottky barrier rectifier

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 22 June 2010

Document identifier: PME G20 05 C T

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Packing information . . . . . . . . . . . . . . . . . . . . . 9

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

14 Contact information. . . . . . . . . . . . . . . . . . . . . 13

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14