SZ1SMA36CAT3G - ON Semiconductor

April, 2016 − Rev. 13 1Publication Order Number:

1SMA10CAT3/D

1SMA10CAT3G Series,

SZ1SMA10CAT3G Series

400 Watt Peak Power Zener

Transient Voltage

Suppressors

Bidirectional

The SMA series is designed to protect voltage sensitive

components from high voltage, high energy transients. They have

excellent clamping capability, high surge capability, low zener

impedance and fast response time. The SMA series is supplied in

ON Semiconductor ’s exclusive, cost-effective, highly reliable

SURMETIC® package and is ideally suited for use in

communication systems, automotive, numerical controls, process

controls, m edical equipment, business machines, p ower s upplies and

many other industrial/consumer applications.

Features

•Working Peak Reverse Voltage Range − 10 V to 78 V

•Standard Zener Breakdown Voltage Range − 11.7 V to 91.3 V

•Peak Power − 400 Watts @ 1 ms

•ESD Rating of Class 3 (> 16 kV) per Human Body Model

•Response Time is Typically < 1 ns

•Flat Handling Surface for Accurate Placement

•Package Design for Top Slide or Bottom Circuit Board Mounting

•Low Profile Package

•SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•These are Pb−Free Devices*

Mechanical Characteristics:

CASE: Void-free, transfer-molded plastic

FINISH: All external surfaces are corrosion resistant and leads are

readily solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

POLARITY: Cathode polarity notch does not indicate polarity

MOUNTING POSITION: Any

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

PLASTIC SURFACE MOUNT

ZENER OVERVOLTAGE

TRANSIENT SUPPRESSORS

10−78 V VR

400 W PEAK POWER

Device** Package Shipping†

ORDERING INFORMATION

SMA

CASE 403D

PLASTIC

MARKING DIAGRAM

www.onsemi.com

1SMAxxCAT3G SMA

(Pb−Free) 5,000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

**The “T3” suffix refers to a 13 inch reel.

See specific marking information in the device marking

column of the Electrical Characteristics table on page 3 o

this data sheet.

DEVICE MARKING INFORMATION

xxC = Device Code (Refer to page 3)

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

xxC

AYWWG

SZ1SMAxxCAT3G SMA

(Pb−Free) 5,000 /

Tape & Reel

1SMA10CAT3G Series, SZ1SMA10CAT3G Series

www.onsemi.com

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms PPK 400 W

DC Power Dissipation @ TL = 75°C Measured Zero Lead Length (Note 2)

Derate Above 75°C

Thermal Resistance from Junction−to−Lead

RqJL

1.5

mW/°C

°C/W

DC Power Dissipation (Note 3) @ TA = 25°C

Derate Above 25°C

Thermal Resistance from Junction−to−Ambient

RqJA

0.5

4.0

250

mW/°C

°C/W

Operating and Storage Temperature Range TJ, Tstg −65 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be af fected.

1. 10 X 1000 ms, non−repetitive.

2. 1 in square copper pad, FR−4 board.

3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol Parameter

IPP Maximum Reverse Peak Pulse Current

VCClamping Voltage @ IPP

VRWM Working Peak Reverse Voltage

IRMaximum Reverse Leakage Current @ VRWM

VBR Breakdown Voltage @ IT

ITTest Current

Bi−Directional TVS

IPP

VRWM

VCVBR VRWM VC

VBR

1SMA10CAT3G Series, SZ1SMA10CAT3G Series

www.onsemi.com

ELECTRICAL CHARACTERISTICS

Device* Device

Marking

VRWM

(Note 4) IR @ VRWM

Breakdown Voltage VC @ IPP

(Note 6) C Typ.

(Note 7)

VBR (Volts) (Note 5) @ ITVCIPP

Volts mAMin Nom Max mA Volts Amps pF

1SMA10CAT3G QXC 10 2.5 11.1 11.69 12.27 1.0 17.0 23.5 580

1SMA12CAT3G REC 12 2.5 13.3 14.00 14.70 1.0 19.9 20.1 490

1SMA13CAT3G RGC 13 2.5 14.4 15.16 15.92 1.0 21.5 18.6 455

1SMA15CAT3G RMC 15 2.5 16.7 17.58 18.46 1.0 24.4 16.4 400

1SMA16CAT3G RPC 16 2.5 17.8 18.74 19.67 1.0 26.0 15.4 375

1SMA18CAT3G RTC 18 2.5 20 21.06 22.11 1.0 29.2 13.7 335

1SMA20CAT3G RVC 20 2.5 22.2 23.37 24.54 1.0 32.4 12.3 305

1SMA24CAT3G RZC 24 2.5 26.7 28.11 29.51 1.0 38.9 10.3 260

1SMA26CAT3G SEC 26 2.5 28.9 30.42 31.94 1.0 42.1 9.5 240

1SMA28CAT3G SGC 28 2.5 31.1 32.74 34.37 1.0 45.4 8.8 225

1SMA30CAT3G SKC 30 1.0 33.3 35.06 36.81 1.0 48.4 8.3 210

1SMA33CAT3G SMC 33 2.5 36.7 38.63 40.56 1.0 53.3 7.5 190

1SMA36CAT3G SPC 36 2.5 40 42.11 44.21 1.0 58.1 6.9 175

1SMA40CAT3G SRC 40 2.5 44.4 46.74 49.07 1.0 64.5 6.2 160

1SMA48CAT3G SXC 48 2.5 53.3 56.11 58.91 1.0 77.4 5.2 135

1SMA58CAT3G TGC 58 2.5 64.4 67.79 71.18 1.0 93.6 4.3 115

1SMA60CAT3G TKC 60 2.5 66.7 70.21 73.72 1.0 96.8 4.1 110

1SMA70CAT3G TPC 70 2.5 77.8 81.90 85.99 1.0 113 3.5 95

1SMA78CAT3G TTC 78 2.5 86.7 91.27 95.83 1.0 126 3.2 90

4. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than

the DC or continuous peak operating voltage level

5. VBR measured at pulse test current IT at an ambient temperature of 25°C

6. Surge current waveform per Figure 2 and derate per Figure 3

7. Bias voltage = 0 V, F = 1.0 MHz, TJ = 25°C.

†Please see 1SMA5.0AT3 to 1SMA78AT3 for Unidirectional devices.

*Include SZ-prefix devices where applicable.

1SMA10CAT3G Series, SZ1SMA10CAT3G Series

www.onsemi.com

RATING AND TYPICAL CHARACTERISTIC CURVES

TA = 25°C

PW (ID) IS DEFINED AS THE

POINT WHERE THE PEAK CURRENT

DECAYS TO 50% OF Ipp.

= 10 ms

PEAK VALUE

Ippm

HALF VALUE - Ipp/2

10/1000 ms WAVEFORM

AS DEFINED BY R.E.A.

120

100

001 2 34

Figure 1. Pulse Rating Curve

10-4

100

0.1 1 10

0.1

, PULSE WIDTH (ms)

Ppk

NONREPETITIVE

PULSE WAVEFORM

SHOWN IN FIGURE 2.

TA = 25°C

, PEAK POWER (kW)

0.010.001

Figure 2. Pulse Waveform

t, TIME (ms)

Ippm, PEAK PULSE CURRENT (%)

Figure 3. Pulse Derating Curve

120

100

00 40 80 120 160

TA, AMBIENT TEMPERATURE (°C)

PEAK PULSE DERATING IN % OF

200

PEAK POWER OR CURRENT

10 x 1000 WAVEFORM

AS DEFINED BY R.E.A.

1,000

100

1 10 100

BIAS VOLTAGE (VOLTS)

1SMA10CAT3G TJ = 25°C

F = 1 MHz

Figure 4. Typical Junction Capacitance vs.

Bias Voltage

C, CAPACITANCE (pF)

1SMA18CAT3G

1SMA48CAT3G

1SMA78CAT3G

1SMA10CAT3G Series, SZ1SMA10CAT3G Series

www.onsemi.com

PACKAGE DIMENSIONS

SMA

CASE 403D

ISSUE H

DIM

AMIN NOM MAX MIN

MILLIMETERS

1.97 2.10 2.20 0.078

INCHES

A1 0.05 0.10 0.20 0.002

b1.27 1.45 1.63 0.050

c0.15 0.28 0.41 0.006

D2.29 2.60 2.92 0.090

E4.06 4.32 4.57 0.160

L0.76 1.14 1.52 0.030

0.083 0.087

0.004 0.008

0.057 0.064

0.011 0.016

0.103 0.115

0.170 0.180

0.045 0.060

NOM MAX

4.83 5.21 5.59 0.190 0.205 0.220

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,

1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.

POLARITY INDICATOR

OPTIONAL AS NEEDED

(SEE STYLES)

4.000

0.157

2.000

0.079

2.000

0.079

ǒmm

inchesǓ

SCALE 8:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, af filiates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

UBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

1SMA10CAT3/D

SURMETIC is a registered trademark of Semiconductor Components Industries, LLC.

LITERATURE FULFILLMENT:

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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

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Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your loc

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