Document Number 88351 www.vishay.com
20-May-02 1
Zener Diodes VZRange 5.1 to 10V
Power Dissipation 200mW
.006 (0.15)
max.
.010 (0.25)
min.
.012 (0.3)
.076 (1.95)
.112 (2.85)
.059 (1.5)
.004 (0.1)
max.
.049 (1.25)
max.
Cathode Band
Top View
.100 (2.55)
.065 (1.65)
.043 (1.1)
Mounting Pad Layout
Maximum Ratings and Thermal Characteristics(TA= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Power Dissipation Pd 200 mW
Junction Temper ature Tj150 °C
Storage Temperature Range Tstg –55 to + 150 °C
Features
• Silicon Planar Power Zener Diodes
• Low Zener impedence and low leakage current
• Popular in Asian designs
• Compact surface mount device
• Ideal for automated mounting
• Complies with IEC 61000-4-2 for ESD protection
Mechanical Data
Case: SOD-323 Plastic Package
Weight: Approx. 0.004g
Marking Codes: See table on next page
Packaging Codes/Options:
D5/10K per 13”reel (8mm tape)
D6/3K per 7”reel (8mm tape)
0.055
(1.40) 0.062
(1.60)
0.047 (1.20)
SOD-323
Dimensions in inches
and (millimeters)
GTZ Series for ESD Protection
Vishay Semiconductors
for mer ly General Semiconductor
New Product
www.vishay.com Document Number 88351
220-May-02
Electrical Characteristics (TA= 25°C unless otherwise noted)
Marking Zener Voltage ESD-
Type Code VZ(V)(1) IZT (mA) Reverse Current Dynamic Resistance
Capability
(2)
min max IR(max) (µA) VRT (V) rd(max) (Ω)I
ZT (mA) (kV) (min)
GTZ5.1 G1 4.84 5.37 5 5 1.5 130 5 30
GTZ5.6 G2 5.31 5.92 5 5 2.5 80 5 30
GTZ6.2 G3 5.86 6.53 5 2 3.0 50 5 30
GTZ6.8 G4 6.47 7.14 5 2 3.5 30 5 30
GTZ7.5 G5 7.06 7.84 5 2 4.0 30 5 30
GTZ8.2 G6 7.76 8.64 5 2 5.0 30 5 30
GTZ9.1 G7 8.56 9.55 5 2 6.0 30 5 30
GTZ10 G8 9.45 10.55 5 2 7.0 30 5 30
Notes:
(1) Tested with pulse (PW = 40ms).
(2) C = 150pF, R = 330 ohms, Both forward and reverse direction 10 pulse (contact mode)
GTZ Series for ESD Protection
Vishay Semiconductors
for mer ly General Semiconductor
Document Number 88351 www.vishay.com
20-May-02 3
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
GTZ Series for ESD Protection
Vishay Semiconductors
for mer ly General Semiconductor
IZ (mA)
Fig. 1 – VZ vs IZ (GTZ6V8)
0.1
1
10
100
6.6 6.8 7
VZ (V)
7.2 7.4
RZ (Ω)
Fig. 3 – RZ vs IZ (GTZ6V8)
0.1
1
10
100
1000
02040
IZ (mA)
60 80 100
If (mA)
0.1
0.01
1
10
100
300 400 500
Vf (mV)
600 700 800 900 1000
Fig. 5 – VF vs IF (GTZ6V8)
IZ (mA)
0.1
1
10
100
8.6 8.8 9
VZ (V)
9.2 9.4 9.6 9.8 10 10.2
Fig. 2 – VZ vs IZ (GTZ9V1)
20 40 60 80 100
Fig. 4 – RZ vs IZ (GTZ9V1)
RZ (Ω)
0.1
1
0
IZ (mA)
10
100
If (mA)
0.1
0.01
1
10
100
300 400 500
Vf (mV)
600 700 800 900 1000
Fig. 6 – VF vs IF (GTZ9V1)
TJ = 25°C
TJ = 85°C
TJ = 100°C
TJ = 150°C
TJ = 150°C
TJ = 25°C
TJ = 100°C
TJ = 150°C
TJ = 25°C
TJ = 100°CTJ = 85°C
TJ = 25°C
TJ = 150°C
TJ = 85°CTJ = 100°C
TJ = 150°C
TJ = 25°C
TJ = 100°C
TJ = 150°C
TJ = 25°C
TJ = 100°CTJ = 85°C
