1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 package
which is designed for low power surface mount applications.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO –60 Vdc
Collector–Base Voltage VCBO –60 Vdc
Emitter–Base Voltage VEBO –5.0 Vdc
Collector Current — Continuous IC–600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board(1)
TA = 25°CPD150 mW
Thermal Resistance Junction to Ambient R
q
JA 833 °C/W
Junction and Storage Temperature TJ, Tstg –55 to +150 °C
DEVICE MARKING
MMBT2907AWT1 = 20
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2)
(IC = –10 mAdc, IB = 0) V(BR)CEO –60 — Vdc
Collector–Base Breakdown Voltage
(IC = –10 mAdc, IE = 0) V(BR)CBO –60 — Vdc
Emitter–Base Breakdown Voltage
(IE = –10
m
Adc, IC = 0) V(BR)EBO –5.0 — Vdc
Base Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc) IBL —–50 nAdc
Collector Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc) ICEX — –50 nAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBT2907A WT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
12
3
CASE 419–02, STYLE 3
SOT–323/SC–70
Motorola, Inc. 1997
COLLECTOR
3
1
BASE
2
EMITTER
MMBT2907AWT1
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (1)
(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)
(IC = –500 mAdc, VCE = –10 Vdc)
HFE 75
100
100
100
50
—
—
—
—
—
—
Collector–Emitter Saturation V oltage (1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VCE(sat) —
—–0.4
–1.6
Vdc
Base–Emitter Saturation V oltage (1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VBE(sat) —
—–1.3
–2.6
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –50 mAdc, VCE = 20 Vdc, f = 100 MHz) fT200 — MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cobo —8.0 pF
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo —30 pF
SWITCHING CHARACTERISTICS
Turn–On Time
(V 30 Vdc
ton —45
Delay T ime (VCC = –30 Vdc,
I
C
= –150 mAdc, I
B1
= –15 mAdc
)
td— 10
Rise T ime
IC
=
150
mAdc
,
IB1
=
15
mAdc)
tr— 40
ns
Storage T ime
(V 6 0 Vdc I 150 mAdc
ts— 80
ns
Fall T ime (VCC = –6.0 Vdc, IC = –150 mAdc,
I
B1
= I
B2
= 15 mAdc
)
tf— 30
Turn–Off Time
IB1
=
IB2
=
15
mAdc)
toff —100
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
MMBT2907AWT1
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT–323/SC–70 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT–323/SC–70
mm
inches
0.035
0.9
0.075
0.7
1.9
0.028
0.65
0.025
0.65
0.025
SOT–323/SC–70 POWER DISSIPATION
The power dissipation of the SOT–323/SC–70 is a function
of the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT–323/SC–70
package, PD can be calculated as follows:
PD = TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T A of 25°C, one can
calculate the power dissipation of the device which in this
case is 150 milliwatts.
PD = 150°C – 25°C
833°C/W = 150 milliwatts
The 833°C/W for the SOT–323/SC–70 package assumes
the use of the recommended footprint on a glass epoxy
printed circuit board to achieve a power dissipation of
150 milliwatts. There are other alternatives to achieving
higher power dissipation from the SOT–323/SC–70
package. Another alternative would be to use a ceramic
substrate or an aluminum core board such as Thermal
Clad. Using a board material such as Thermal Clad, an
aluminum core board, the power dissipation can be doubled
using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•Always preheat the device.
•The delta temperature between the preheat and
soldering should be 100°C or less.*
•When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
•The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
•When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
•After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
•Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
MMBT2907AWT1
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
CASE 419–02
ISSUE H
SOT–323/SC–70
CRN
AL
D
G
V
SB
H
J
K
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.071 0.087 1.80 2.20
B0.045 0.053 1.15 1.35
C0.035 0.049 0.90 1.25
D0.012 0.016 0.30 0.40
G0.047 0.055 1.20 1.40
H0.000 0.004 0.00 0.10
J0.004 0.010 0.10 0.25
K0.017 REF 0.425 REF
L0.026 BSC 0.650 BSC
N0.028 REF 0.700 REF
R0.031 0.039 0.80 1.00
S0.079 0.087 2.00 2.20
V0.012 0.016 0.30 0.40
0.05 (0.002) STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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MMBT2907AWT1/D
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