Document Number: 93493 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 24-Jun-08 1
Medium Power
Silicon Rectifier Diodes, 12 A
1N1...A, 1N36..A Series
Vishay High Power Products
FEATURES
• Voltage ratings from 50 to 1000 V
• High surge capability
• Low thermal impedance
• High temperature rating
• Can be supplied as JAN and JAN-TX devices in
accordance with MIL-S-19500/260
• RoHS compliant
Note
(1) JEDEC registered values
ELECTRICAL SPECIFICATIONS
Notes
(1) JEDEC registered values
(2) Basic part number indicates cathode to case; for anode to case, add “R” to part number, e.g., 1N1199RA
PRODUCT SUMMARY
IF(AV) 12 A
DO-203AA (DO-4)
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IF(AV)
12 (1) A
TC150 (1) °C
IFSM
50 Hz 230 A
60 Hz 240 (1)
I2t50 Hz 260 A2s
60 Hz 240
TC- 65 to 200 °C
VRRM Range 50 to 1000 (1) V
VOLTAGE RATINGS
TYPE NUMBER (2)
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VR(RMS), MAXIMUM RMS
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VRM, MAXIMUM DIRECT
REVERSE VOLTAGE
V
TC = - 65 °C TO 200 °C TC = - 65 °C TO 200 °C TC = - 65 °C TO 200 °C TC = - 65 °C TO 200 °C
1N1199A 50 (1) 35 (1) 100 (1) 50 (1)
1N1200A 100 (1) 70 (1) 200 (1) 100 (1)
1N1201A 150 (1) 105 (1) 300 (1) 150 (1)
1N1202A 200 (1) 140 (1) 350 (1) 200 (1)
1N1203A 300 (1) 210 (1) 450 (1) 300 (1)
1N1204A 400 (1) 280 (1) 600 (1) 400 (1)
1N1205A 500 (1) 350 (1) 700 (1) 500 (1)
1N1206A 600 (1) 420 (1) 800 (1) 600 (1)
1N3670A 700 (1) 490 900 (1) 700 (1)
1N3671A 800 (1) 560 1000 (1) 800 (1)
1N3672A 900 (1) 630 1100 (1) 900 (1)
1N3673A 1000 (1) 700 1200 (1) 1000 (1)
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93493
2Revision: 24-Jun-08
1N1...A, 1N36..A Series
Vishay High Power Products Medium Power
Silicon Rectifier Diodes, 12 A
Notes
(1) JEDEC registered values
(2) I2t for time tx = I2√t x √tx
(3) Maximum peak reverse current (IRM) under same conditions ≈ 2 x rated IR(AV)
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature IF(AV) 180° sinusoidal conduction
12 (1) A
150 (1) °C
Maximum peak one cycle
non-repetitive surge current IFSM
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse Following any rated load
condition and with rated
VRRM applied
230
A
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse 240 (1)
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse Following any rated load
condition and with VRRM
applied following surge = 0
275
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse 285
Maximum I2t for fusing
I2t
t = 10 ms With rated VRRM applied
following surge,
initial TJ = 200 °C
260
A2s
t = 8.3 ms 240
Maximum I2t for individual
device fusing
t = 10 ms With VRRM = 0 following
surge, initial TJ = 200 °C
370
t = 8.3 ms 340
Maximum I2√t for individual
device fusing I2√t (2) t = 0.1 to 10 ms, VRRM = 0 following surge 3715 A2√s
Maximum forward voltage drop VFM IF(AV) = 12 A (38 A peak), TC = 25 °C 1.35 (1) V
Maximum average
reverse current
VRRM = 50
IR(AV) (3) Maximum rated IF(AV) and TC
3.0 (1)
mA
VRRM = 100 2.5 (1)
VRRM = 150 2.25 (1)
VRRM = 200 2.0 (1)
VRRM = 300 1.75 (1)
VRRM = 400 1.5 (1)
VRRM = 500 1.25 (1)
VRRM = 600 1.0 (1)
VRRM = 700 0.9 (1)
VRRM = 800 0.8 (1)
VRRM = 900 0.7 (1)
VRRM = 1000 0.6 (1)
Document Number: 93493 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 24-Jun-08 3
1N1...A, 1N36..A Series
Medium Power
Silicon Rectifier Diodes, 12 A Vishay High Power Products
Note
(1) JEDEC registered values
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating case and
storage temperature range TC, TStg - 65 to 200 (1) °C
Maximum internal thermal
resistance, junction to case RthJC DC operation 2.0 (1)
°C/W
Thermal resistance,
case to sink RthCS Mounting surface, smooth, flat and greased 0.5
Mounting torque
minimum
Torque applied to nut; non-lubricated threads
1.36 (12)
N · m
(lbf · in)
maximum 1.69 (15)
minimum
Torque applied to nut; lubricated threads
1.07 (9.45)
maximum 1.30 (11.55)
minimum
Torque applied to device case; lubricated threads
1.17 (10.35)
maximum 1.43 (12.65)
Approximate weight
7.0 g
0.25 oz.
Case style JEDEC DO-203AA (DO-4)
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93493
4Revision: 24-Jun-08
1N1...A, 1N36..A Series
Vishay High Power Products Medium Power
Silicon Rectifier Diodes, 12 A
Fig. 1 - Average Forward Current vs.
Maximum Allowable Case Temperature
Fig. 2 - Maximum Low Level Forward Power Loss vs.
Average Forward Current
Fig. 3 - Maximum High Level Forward Power Loss vs.
Average Forward Current
Fig. 4 - Maximum Forward Voltage vs. Forward Current
Fig. 5 - Maximum Transient Thermal Impedance,
Junction to Case vs. Pulse Duration
Fig. 6 - Maximum Non-Repetitive 50 Hz Surge Current vs.
Number of Current Pulses
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95311
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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