DSA300I100NA
2
3
1
4
Low Loss and Soft Recovery
High Performance Schottky Diode
Single Diode
Schottky Diode
Part number
DSA300I100NA
Backside: Isolated
FAV
F
V V0.88
RRM
300
100
=
V=V
I=A
Features / Advantages: Applications: Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
SOT-227B (minibloc)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
3000
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms and Conditions of Usage
IXYS reserves the right to change limits, conditions and dimensions. 20171127bData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
DSA300I100NA
V = V
Symbol
Definition
Ratings
typ.
max.
I
R
V
IA
V
F
0.99
R0.15 K/W
R
min.
300
V
RSM
V
3T = 25°C
VJ
T = °C
VJ
mA30V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
95
P
tot
830 WT = 25°C
C
RK/W
300
100
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions
Unit
1.30
T = 25°C
VJ
150
V
F0
V
0.53T = °C
VJ
150
r
F
1.09
mΩ
V
0.88T = °C
VJ
I = A
F
V
300
1.21
I = A
F
600
I = A
F
600
threshold voltage
slope resistance for power loss calculation only
mA
125
V
RRM
V
100
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
4.86
junction capacitance
V = V12 T = 25°Cf = 1 MHz
RVJ
nF
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current
V = 0 V
R
T = °C
VJ
150
4.80 kA
100
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
100
0.10
IXYS reserves the right to change limits, conditions and dimensions. 20171127bData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
DSA300I100NA
1)
I
RMS
is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
Ratings
abcdZyyww
XXXXX
Product Marking
Logo
Part No.
DateCode
Assembly Code
Assembly Line
®
D
S
A
300
I
100
NA
Part description
Diode
Schottky Diode
low VF
Single Diode
SOT-227B (minibloc)
=
=
=
DSA300I200NA SOT-227B (minibloc) 200
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm1.5
mounting torque
1.1
T
VJ
°C150
virtual junction temperature
-40
Weight g30
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
M
T
Nm1.5
terminal torque
1.1
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
10.5 3.2
8.6 6.8
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
150 A
per terminal
125-40
terminal to terminal
SOT-227B (minibloc)
Similar Part Package Voltage class
DSA300I45NA SOT-227B (minibloc) 45
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
1)
50/60 Hz, RMS; I ≤ 1 mA
ISOL
DSA300I100NA 509813Tube 10DSA300I100NAStandard
3000
ISOL
T
stg
°C150
storage temperature
-40
2500
threshold voltage
V0.53
mΩ
V
0 max
R
0 max
slope resistance *
0.25
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Schottky
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20171127bData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
DSA300I100NA
2
3
1
4
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions. 20171127bData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
DSA300I100NA
0.0 0.4 0.8 1.2
0
100
200
300
400
500
600
20 40 60 80 100
0.0001
0.001
0.01
0.1
1
10
1
0
0
0 50 100 150 200 250
0
50
100
150
200
250
0 50 100
0
2000
4000
6000
8000
10000
12000
14000
16000
I
F
[A]
V
F
[V]
I
R
[mA]
V
R
V]V[
R
[V]
C
T
[pF]
I
F(AV)
[A]
P
(AV)
[W]
Z
thJC
[K/W]
t [ms]
Fig. 1 Max. forward voltage
drop characteristics
Fig. 2 Typ. reverse current
I
R
vs. reverse voltage V
R
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
Fig. 4a Power dissipation versus direct output current
Fig. 4b and ambient temperature
F
ig
.
6
T
r
an
s
ien
t t
he
r
m
al
i
m
pedan
c
e
jun
c
t
ion
t
o
c
a
s
e
T
VJ
=
25°C
125°C
150°C
T
VJ
= 25°C
100°C
50°C
25°C
0 40 80 120 160
1 10 100 1000 10000
0.00
0.04
0.08
0.12
0.16
0 40 80 120 160
0
50
100
150
200
250
300
350
T
C
[°C]
Fig. 5 Average forward current
I
F(AV)
vs. case temp. T
C
I
F(AV)
[A]
T
amb
[°C]
R
thHA
0.2
0.4
0.6
0.8
1.0
2.0
dc =
1
0.5
0.4
0.33
0.17
0.08
dc =
1
0.5
0.4
0.33
0.17
R
thi
[K/W]
0.017
0.013
0.02
0.05
0.05
t
i
[s]
0.01
0.00001
0.01
0.045
0.3
T
VJ
=150°C
125°C
75°C
Schottky
IXYS reserves the right to change limits, conditions and dimensions. 20171127bData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
