LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series–1/11
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
1
3
2
MUN2211T1
SERIES
SC–59
CASE 318D, STYLE 1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation PD230(Note 1) mW
TA = 25°C 338(Note 2)
Derate above 25°C 1.8 (Note 1) °C/W
2.7 (Note 2)
Thermal Resistance – RθJA 540(Note 1) °C/W
Junction-to-Ambient 370(Note 2)
Thermal Resistance – RθJL 264(Note 1) °C/W
Junction-to-Lead 287(Note 2)
Junction and Storage TJ, Tstg –55 to +150 °C
Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
PIN 2
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
PIN 1
EMITTER
(GROUND)
R1
R2
MARKING DIAGRAM
8X M
8 X = Specific Device Code*
M = Date Code
This new series of digital transistors is designed to replace a single device and
its external resistor bias network. The BRT (Bias Resistor Transistor) contains a
single transistor with a monolithic bias network consisting of two resistors; a
series base resistor and a base–emitter resistor. The BRT eliminates these indi-
vidual components by
integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC–59 package which is
designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Moisture Sensitivity Level: 1
• ESD Rating – Human Body Model: Class 1
ESD Rating – Machine Model: Class B
• The SC–59 package can be soldered using wave or reflow. The modified
gull–winged leads absorb thermal stress during soldering eliminating the
possibility of damage to the die.
• Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
DEVICE MARKING INFORMATION
*See specific marking information in the device marking table on page 2 of this data sheet.
NPN SILICON
BIAS RESISTOR
TRANSISTORS
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series–2/11
MUN2211T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device Package Marking R1 (K) R2 (K) Shipping
MUN2211T1 SC–59 8A 10 10 3000/Tape & Reel
MUN2212T1 SC–59 8B 22 22 3000/Tape & Reel
MUN2213T1 SC–59 8C 47 47 3000/Tape & Reel
MUN2214T1 SC–59 8D 10 47 3000/Tape & Reel
MUN2215T1 (Note 3) SC–59 8E 10 ∞3000/Tape & Reel
MUN2216T1 (Note 3) SC–59 8F 4.7 ∞3000/Tape & Reel
MUN2230T1 (Note 3) SC–59 8G 1.0 1.0 3000/Tape & Reel
MUN2231T1 (Note 3) SC–59 8H 2.2 2.2 3000/Tape & Reel
MUN2232T1 (Note 3) SC–59 8J 4.7 4.7 3000/Tape & Reel
MUN2233T1 (Note 3) SC–59 8K 4.7 47 3000/Tape & Reel
MUN2234T1 (Note 3) SC–59 8L 22 47 3000/Tape & Reel
MUN2236T1 SC–59 8N 100 100 3000/Tape & Reel
MUN2237T1 SC–59 8P 47 22 3000/Tape & Reel
MUN2240T1 (Note 3) SC–59 8T 47 ∞3000/Tape & Reel
MUN2241T1 (Note 3) SC–59 8U 100 ∞3000/Tape & Reel
3. New devices. Updated curves to follow in subsequent data sheets.
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series–3/11
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO – – 100 nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO – – 500 nAdc
Emitter-Base Cutoff Current MUN2211T1
(VEB = 6.0 V, IC = 0) MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2236T1
MUN2237T1
MUN2240T1
MUN2241T1
IEBO –
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.05
0.13
0.2
0.1
mAdc
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 – – Vdc
Collector-Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0) V(BR)CEO 50 – – Vdc
ON CHARACTERISTICS (Note 4)
DC Current Gain MUN2211T1
(VCE = 10 V, IC = 5.0 mA) MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2236T1
MUN2237T1
MUN2240T1
MUN2241T1
hFE 35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
160
160
60
100
140
140
350
350
5.0
15
30
200
150
150
140
350
350
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MUN2230T1/MUN2231T1
(IC = 10 mA, IB = 1 mA) MUN2215T1/MUN2216T1/
MUN2232T1/MUN2233T1/MUN2234T1
VCE(sat) – – 0.25 Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) MUN2211T1
MUN2212T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) MUN2213T1
MUN2240T1
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kΩ) MUN2236T1
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kΩ) MUN2237T1
(VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kΩ) MUN2241T1
VOL –
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
MUN2211T1 Series
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series–4/11
MUN2211T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 5) (Continued)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MUN2230T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) MUN2215T1
MUN2216T1
MUN2233T1
MUN2240T1
VOH 4.9 – – Vdc
Input Resistor MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2235T1
MUN2236T1
MUN2237T1
MUN2240T1
MUN2241T1
R17.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
70
32.9
70
32.9
70
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
100
47
100
47
100
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
130
61.1
130
61.1
100
kΩ
Resistor Ratio MUN2211T1/MUN2212T1/MUN2213T1/
MUN2236T1
MUN2214T1
MUN2215T1/MUN2216T1/MUN2240T1/
MUN2241T1
MUN2230T1/MUN2231T1/MUN2232T1
MUN2233T1
MUN2234T1
MUN2237T1
R1/R20.8
0.17
–
0.8
0.055
0.38
1.7
1.0
0.21
–
1.0
0.1
0.47
2.1
1.2
0.25
–
1.2
0.185
0.56
2.6
5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
Figure 1. Derating Curve
350
200
150
100
50
0
–50 0 50 100 150
TA, AMBIENT TEMPERATURE (°C)
RθJA = 370°C/W
250
PD, POWER DISSIPATION (mW)
300
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series–5/11
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2211T1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN
Figure 2. VCE(sat) versus IC
1002030
IC, COLLECTOR CURRENT (mA)
10
1
0.1
VO = 0.2 V TA=-25°C
75°C
25°C
40 50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
1
0.1
0.01
0.001 0204060 80
IC, COLLECTOR CURRENT (mA)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1000
100
10 1 10 100
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
TA=-25°C
25°C
IC/IB = 10
Figure 5. Output Current versus Input Voltage
75°C
25°C
TA=-25°C
100
10
1
0.1
0.01
0.001 01 2 34
Vin, INPUT VOLTAGE (VOLTS)
5678910
Figure 6. Input Voltage versus Output Current
50
010203040
4
3
1
2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
75°C
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
MUN2211T1 Series
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series–6/11
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2212T1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN
Figure 7. VCE(sat) versus ICFigure 8. DC Current Gain
Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
101 100
75°C 25°C
100
0
Vin, INPUT VOLTAGE (VOLTS)
10
1
0.1
0.01
0.001 246 810
TA=-25°C
0
IC, COLLECTOR CURRENT (mA)
100
VO = 0.2 V
TA=-25°C
75°C
10
1
0.1 10 20 30 40 50
25°C
Figure 11. Input Voltage versus Output Current
0.001
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
25°C
IC/IB = 10
0.01
0.1
1
40
IC, COLLECTOR CURRENT (mA)
020 6080
50
010203040
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
TA=-25°C
75°C
MUN2211T1 Series
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series–7/11
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2213T1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN
Figure 12. VCE(sat) versus IC
0246810
100
10
1
0.1
0.01
0.001
Vin, INPUT VOLTAGE (VOLTS)
TA=-25°C
75°C25°C
Figure 13. DC Current Gain
Figure 14. Output Capacitance
100
10
1
0.1
010 2030 40 50
IC, COLLECTOR CURRENT (mA)
Figure 15. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
10 1 100
Figure 16. Input Voltage versus Output Current
0204060 80
10
1
0.1
0.01
IC, COLLECTOR CURRENT (mA)
TA=-25°C
25°C75°C
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TA=-25°C
25°C
75°C
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
MUN2211T1 Series
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series–8/11
MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2214T1
10
1
0.1 01020304050
100
10
10246810
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8101520253035404550
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN
Figure 17. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
020406080
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 18. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
Figure 21. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25°C
25°C
TA=75°C
VCE = 10
300
250
200
150
100
50
02468 1520405060708090
f = 1 MHz
lE = 0 V
TA = 25°C
TA=-25°C
25°C
75°C
IC/IB = 10
75°C25°C
TA=-25°C
VO = 5 V
VO= 0.2 V
TA=-25°C
25°C
75°C
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series–9/11
MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2236T1
100
1
0.1 0102030355
100
10
0510
4
3.5
3
2.5
2
1.5
1
0.5
00 5 10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 22. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
010203040
Figure 23. DC Current Gain
0.1 1 100
IC, COLLECTOR CURRENT (mA)
Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Figure 26. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
VCE = 10 V
1000
100
10 10
f = 1 MHz
lE = 0 V
TA = 25°C
TA= –25°C25°C
75°C
75°C
25°C
TA= –25°C
VO = 5 V
VO = 0.2 V TA= –25°C25°C
75°C
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
IC/IB = 10
hFE, DC CURRENT GAIN
TA= –25°C25°C
75°C
Cob, CAPACITANCE (pF)
5
4.5
15 20 25 30 35 40
1
0.1
IC, COLLECTOR CURRENT (mA)
15 25
10
Vin, INPUT VOLTAGE (VOLTS)
5152535
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series–10/11
MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2237T1
100
10102030405
100
10
024
1.4
1
0.6
0.2
00 5 10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 27. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
010203040
Figure 28. DC Current Gain
1 100
IC, COLLECTOR CURRENT (mA)
Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Figure 31. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
VCE = 10 V
1000
100
110
f = 1 MHz
lE = 0 V
TA = 25°C
TA= –25°C25°C
75°C
75°C
25°CTA= –25°C
VO = 5 V
VO = 0.2 V
TA= –25°C
25°C75°C
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
IC/IB = 10
hFE, DC CURRENT GAIN
TA= –25°C25°C
75°C
Cob, CAPACITANCE (pF)
1.8
6 8 10 12 14 16
1
0.001
IC, COLLECTOR CURRENT (mA)
15 25
10
Vin, INPUT VOLTAGE (VOLTS)
5152535
10
1.6
1.2
0.8
0.4
2
0.1
0.01
35
LESHAN RADIO COMPANY, LTD.
MUN221 1T1 Series–11/1 1
MUN2211T1 Series
TYPICAL APPLICATIONS FOR NPN BRTs
LOAD
+12 V
Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
IN
OUT
VCC
ISOLATED
LOAD
FROM µP OR
OTHER LOGIC
+12 V
Figure 33. Open Collector Inverter:
Inverts the Input Signal Figure 34. Inexpensive, Unregulated Current Source
