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Toshiba Electronic Devices & Storage Corporation
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1587
Audio Frequency General Purpose Amplifier Applications
AEC-Q101 Qualified (Note1)
High voltage: VCEO = −120 V
Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)
= 0.95 (typ.)
High hFE: hFE = 200 to 700
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SC4117
Small package
Note1: For detail information, please contact our sales.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Base current
IB
20
mA
Collector power dissipation
PC (Note 1)
200
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Note 1： Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.5 mm2 × 3)
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Start of commercial production
1987-01
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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB 120 V, IE 0 A
0.1
A
Emitter cut-off current
IEBO
VEB 5 V, IC 0 A
0.1
A
DC current gain
hFE
(Note)
VCE 6 V, IC 2 mA
200
700
Collector-emitter saturation voltage
VCE (sat)
IC 10 mA, IB 1 mA
0.3
V
Transition frequency
fT
VCE 6 V, IC 1 mA
100
MHz
Collector output capacitance
Cob
VCB 10 V, IE 0 A, f 1 MHz
4
pF
Noise figure
NF
VCE 6 V, IC 0.1 mA, f 1 kHz,
Rg 10 k
1.0
10
dB
Note: hFE classification GR (G): 200 to 400, BL (L): 350 to 700 ( ) marking symbol
Marking
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Toshiba Electronic Devices & Storage Corporation
Characteristics Curves
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Toshiba Electronic Devices & Storage Corporation
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
0
50
100
150
200
250
300
025 50 75 100 125 150
COLLECTOR POWER DISSIPATION Pc(mW)
AMBIENT TEMPERATURE Ta(℃)
Pc- Ta
Mounted on an FR4 board
(25.4 mm ×25.4 mm ×1.6 mm,
Cu pad: 0.5 mm2×3)
2SA1587
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Toshiba Electronic Devices & Storage Corporation
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Hardware, software and systems described in this document are collectively referred to as “Product”.
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written permission, reproduction is permissible only if reproduction is without alteration/omission.
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