central . CLL3595 Semiconductor Corp. LOW LEAKAGE SILICON DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications. Marking Code: Cathode Band. Ce SOD-80 CASE MAXIMUM RATINGS: (T q=25C) SYMBOL UNITS Peak Repetitive Reverse Voltage VRRM 150 Vv Peak Working Reverse Voltage VRWM 125 V Average Forward Current lo 150 mA Forward Steady-State Current IF 225 mA Recurrent Peak Forward Current if 600 mA Peak Forward Surge Current (1.0s pulse) lesm 500 mA Peak Forward Surge Current (1.0us pulse) 'FSM 4.0 A Power Dissipation Pp 500 mw Operating and Storage Junction Temperature Ty. Tstg -65 to +200 C Thermal Resistance OJA 350 oC ELECTRICAL CHARACTERISTICS: (Ta=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS BVR in=100nA 150 v In VR=125V 1.0 nA In VR=125V, Tp=125C 500 nA IR VR=125V, Ta=150C 3.0 LA IR VpR=30V, Ta=125C 300 nA Ve IF=1.0MA 0.52 0.68 V Ve IF=5.0mA 0.60 0.75 V VE Ic=10mA 0.65 0.80 V Ve Ip=50mA 0.75 0.88 Vv VE IF=100MA 0.79 0.92 V Ve lp=200mA 0.83 1.00 V 136 SYMBOL TEST CONDITIONS MIN MAX UNITS Cr VR=0, f=1.0MHz 8.0 pF ter VR=3.5V, l=10mA, Ry =1.0kQ 3.0 ys All dimensions in inches (mm). .130(3.30) .146(3.71) .016(0.41) -051(1.30) @-o67(1.70) -004(0.10) MAXIMUM DATA SS) aldol R1 137