TCLT10.. Series - Vishay Telefunken

TCLT10.. Series

Vishay Semiconductors

1 (12)

www.vishay.comDocument Number 83515

Rev. A3, 19–Mar–01

Optocoupler with Phototransistor Output

Description

The TCLT10.. Series consists of a phototransistor

optically coupled to a gallium arsenide infrared-

emitting diode in a 4-lead SO6L package.

The elements are mounted on one leadframe using a

coplanar technique, providing a fixed distance

between input and output for highest safety

requirements.

Applications

Circuits for safe protective separation against

electrical shock according to safety class II (reinforced

isolation):

For appl. class I – IV at mains voltage ≤ 300 V

For appl. class I – III at mains voltage ≤ 600 V

according to VDE 0884, table 2, suitable for:

Switch-mode power supplies, line receiver,

computer peripheral interface, microprocessor

system interface.

VDE Standards

These couplers perform safety functions according to

the following equipment standards:

VDE 0884

Optocoupler for electrical safety requirements

(will be replaced by IEC 747–5–1.2.3)

IEC 950/EN 60950

Office machines (applied for reinforced isolation

for mains voltage ≤ 400 VRMS)

VDE 0804

Telecommunication apparatus and data

processing

IEC 65

Safety for mains-operated electronic and related

household apparatus

15231

15242

TCLT10.. Series

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2 (12) Rev. A3, 19–Mar–01

Document Number 83515

Order Instruction

Ordering Code CTR Ranking Remarks

TCLT1000 50 to 600% 4 Pin = Single channel

TCLT1001 40 to 80% 4 Pin = Single channel

TCLT1002 63 to 125% 4 Pin = Single channel

TCLT1003 100 to 200% 4 Pin = Single channel

TCLT1005 50 to 150% 4 Pin = Single channel

TCLT1006 100 to 300% 4 Pin = Single channel

TCLT1007 80 to 160% 4 Pin = Single channel

TCLT1008 130 to 260% 4 Pin = Single channel

TCLT1009 200 to 400% 4 Pin = Single channel

Features

Approvals:

BSI: BS EN 41003, BS EN 60095 (BS 415),

BS EN 60950 (BS 7002),

Certificate number 7081 and 7402

Underwriters Laboratory (UL) 1577 recognized,

file number E-76222 – Double Protection

CSA (C-UL) 1577 recognized

file number E- 76222 - Double Protection

VDE 0884, Certificate number 132473

VDE 0884 related features:

Rated impulse voltage (transient overvoltage)

VIOTM = 8 kV peak

Isolation test voltage

(partial discharge test voltage) Vpd = 1.6 kV

Rated isolation voltage (RMS includes DC)

VIOWM = 600 VRMS (848 V peak)

Rated recurring peak voltage (repetitive)

VIORM = 600 VRMS

Creepage current resistance according

to VDE 0303/IEC 112

Comparative Tracking Index: CTI ≥ 175

Thickness through insulation ≥ 0.75 mm

Creepage distance > 8 mm

Tested acc. 60950: Am4: 1997 clause 2.9.6.

General features:

Low profile package

CTR offered in 9 groups

Isolation materials according to UL94-VO

Pollution degree 2

(DIN/VDE 0110 / resp. IEC 664)

Climatic classification 55/100/21 (IEC 68 part 1)

Special construction:

Therefore, extra low coupling capacity of

typical 0.2 pF, high Common Mode Rejection

Low temperature coefficient of CTR

Coupling System W

TCLT10.. Series

Vishay Semiconductors

3 (12)

www.vishay.comDocument Number 83515

Rev. A3, 19–Mar–01

Absolute Maximum Ratings

Input (Emitter)

Parameter Test Conditions Symbol Value Unit

Reverse voltage VR6 V

Forward current IF60 mA

Forward surge current tp ≤ 10

s IFSM 1.5 A

Power dissipation Tamb ≤ 25

C PV100 mW

Junction temperature Tj125

Output (Detector)

Parameter Test Conditions Symbol Value Unit

Collector emitter voltage VCEO 70 V

Emitter collector voltage VECO 7 V

Collector current IC50 mA

Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA

Power dissipation Tamb ≤ 25

C PV150 mW

Junction temperature Tj125

Coupler Parameter Test Conditions Symbol Value Unit

Isolation test voltage (RMS) VIO 5 kV

Total power dissipation Tamb ≤ 25

C Ptot 250 mW

Operating ambient temperature

range Tamb –40 to +100

Storage temperature range Tstg –40 to +100

Soldering temperature Tsd 235

TCLT10.. Series

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4 (12) Rev. A3, 19–Mar–01

Document Number 83515

Electrical Characteristics (Tamb = 25°C)

Input (Emitter)

Parameter Test Conditions Symbol Min. Typ. Max. Unit

Forward voltage IF = ± 50 mA VF1.25 1.6 V

Junction capacitance VR = 0 V, f = 1 MHz Cj50 pF

Output (Detector)

Parameter Test Conditions Symbol Min. Typ. Max. Unit

Collector emitter voltage IC = 1 mA VCEO 70 V

Emitter collector voltage IE = 100

A VECO 7 V

Collector emitter cut-off cur-

rent VCE = 20 V, If = 0, E = 0 ICEO 10 100 nA

CouplerParameter Test Conditions Symbol Min. Typ. Max. Unit

Collector emitter saturation

voltage IF = 10 mA, IC = 1 mA VCEsat 0.3 V

Cut-off frequency VCE = 5 V, IF = 10 mA,

RL = 100

fc110 kHz

Coupling capacitance f = 1 MHz Ck0.3 pF

Current Transfer Ratio (CTR)

Parameter Test Conditions Type Symbol Min. Typ. Max. Unit

IC/IFVCE = 5 V, IF = 5 mA TCLT1000 CTR 0.50 6.0

C F

VCE = 5 V, IF = 10 mA TCLT1001 CTR 0.40 0.8

VCE = 5 V, IF = 10 mA TCLT1002 CTR 0.63 1.25

VCE = 5 V, IF = 10 mA TCLT1003 CTR 1.0 2.0

VCE = 5 V, IF = 1 mA TCLT1001 CTR 0.13 0.30

VCE = 5 V, IF = 1 mA TCLT1002 CTR 0.22 0.45

VCE = 5 V, IF = 1 mA TCLT1003 CTR 0.34 0.70

VCE = 5 V, IF = 5 mA TCLT1005 CTR 0.5 1.5

VCE = 5 V, IF = 5 mA TCLT1006 CTR 1.0 3.0

VCE = 5 V, IF = 5 mA TCLT1007 CTR 0.8 1.6

VCE = 5 V, IF = 5 mA TCLT1008 CTR 1.3 2.6

VCE = 5 V, IF = 5 mA TCLT1009 CTR 2.0 4.0

TCLT10.. Series

Vishay Semiconductors

5 (12)

www.vishay.comDocument Number 83515

Rev. A3, 19–Mar–01

Maximum Safety Ratings (according to VDE 0884) see figure 1

This optocoupler is suitable for safe electrical isolation only within the safety ratings.

Compliance with the safety ratings shall be ensured by means of suitable protective circuits.

Input (Emitter)

Parameters Test Conditions Symbol Value Unit

Forward current Isi 130 mA

Output (Detector)

Parameters Test Conditions Symbol Value Unit

Power dissipation Tamb ≤ 25

C Psi 265 mW

Coupler

Parameters Test Conditions Symbol Value Unit

Rated impulse voltage VIOTM 8 kV

Safety temperature Tsi 150

Insulation Rated Parameters (according to VDE 0884)

Parameter Test Conditions Symbol Min. Typ. Max. Unit

Partial discharge test voltage –

Routine test 100%, ttest = 1 s Vpd 1.6 kV

Partial discharge test voltage – tTr = 60 s, ttest = 10 s, VIOTM 8 kV

Lot test (sample test)

Tr test

(see figure 2) Vpd 1.3 kV

Insulation resistance VIO = 500 V RIO 1012

VIO = 500 V,

Tamb = 100

CRIO 1011

VIO = 500 V,

Tamb = 150

(construction test only)

RIO 109

0 25 50 75 125

100

150

200

300

P – Total Power Dissipation ( mW )

tot

Tsi – Safety Temperature ( °C )

150

94 9182

100

250 Phototransistor

Psi ( mW )

IR-Diode

Isi ( mA )

Figure 1. Derating diagram

13930

t1, t2 = 1 to 10 s

t3, t4 = 1 s

ttest = 10 s

tstres = 12 s

VIOTM

VPd

VIOWM

VIORM

ttest

tTr = 60 s tstres

t3t4

Figure 2. Test pulse diagram for sample test according to

DIN VDE 0884

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6 (12) Rev. A3, 19–Mar–01

Document Number 83515

Switching Characteristics

Parameter Test Conditions Symbol Typ. Unit

Delay time VS = 5 V, IC = 2 mA, RL = 100

(see figure 3) td3.0

Rise time

S C L (g)

tr3.0

Turn-on time ton 6.0

Storage time ts0.3

Fall time tf4.7

Turn-off time toff 5.0

Turn-on time VS = 5 V, IF = 10 mA, RL = 1 k

(see figure 4) ton 9.0

Turn-off time

S F L (g)

toff 10.0

Channel I

Channel II

95 10804

Oscilloscope

RL = 1 M

CL = 20 pF

RG = 50

tp = 50

T= 0.01

+ 5 V

IC = 2 mA; adjusted through

input amplitude

0IF

100

Figure 1. Test circuit, non-saturated operation

+ 5 V

IF = 10 mA

95 10843

Channel I

Channel II Oscilloscope

RL > 1 M

CL < 20 pF

RG = 50

tp = 50

T= 0.01

1 k

Figure 2. Test circuit, saturated operation

tpt

10%

90%

100%

ton

tstf

toff

96 11698

tppulse duration

tddelay time

trrise time

ton (= td + tr) turn-on time

tsstorage time

tffall time

toff (= ts + tf) turn-of f time

Figure 3. Switching times

TCLT10.. Series

Vishay Semiconductors

7 (12)

www.vishay.comDocument Number 83515

Rev. A3, 19–Mar–01

Typical Characteristics (Tamb = 25

C, unless otherwise specified)

100

150

200

250

300

0 40 80 120

P – Total Power Dissipation ( mW )

Tamb – Ambient Temperature ( °C )96 11700

tot

Coupled device

Phototransistor

IR-diode

Figure 4. Total Power Dissipation vs.

Ambient Temperature

0.1

1.0

10.0

100.0

1000.0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VF – Forward Voltage ( V )96 11862

I – Forward Current ( mA )

Figure 5. Forward Current vs. Forward Voltage

–25 0 25 50

0.5

1.0

1.5

2.0

CTR – Relative Current Transfer Ratio

rel

Tamb – Ambient Temperature ( °C )95 11025

VCE=5V

IF=5mA

Figure 6. Relative Current Transfer Ratio vs.

Ambient Temperature

0255075

100

1000

10000

I – Collector Dark Current,

CEO

Tamb – Ambient Temperature ( °C )

100

95 11026

with open Base ( nA )

VCE=20V

IF=0

Figure 7. Collector Dark Current vs. Ambient Temperature

0.1 1 10

0.01

0.1

100

I – Collector Current ( mA )

IF – Forward Current ( mA )

100

95 11027

VCE=5V

Figure 8. Collector Current vs. Forward Current

0.1 1 10

0.1

100

VCE – Collector Emitter Voltage ( V )

100

95 10985

I – Collector Current ( mA )

IF=50mA

5mA

2mA

1mA

20mA

10mA

Figure 9. Collector Current vs. Collector Emitter Voltage

TCLT10.. Series

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8 (12) Rev. A3, 19–Mar–01

Document Number 83515

110

0.2

0.4

0.6

0.8

1.0

V – Collector Emitter Saturation Voltage ( V

)

CEsat

IC – Collector Current ( mA )

100

CTR=50%

20%

10%

95 11028

Figure 10. Collector Emitter Saturation Voltage vs.

Collector Current

0.1 1 10

100

1000

CTR – Current Transfer Ratio ( % )

IF – Forward Current ( mA )

100

95 11029

VCE=5V

Figure 11. Current Transfer Ratio vs. Forward Current

02 4 6

IC – Collector Current ( mA )

95 11030

t / t – Turn on / Turn off Time ( s )

off

Non Saturated

Operation

VS=5V

RL=100

toff

ton

Figure 12. Turn on / off Time vs. Collector Current

0 5 10 15

IF – Forward Current ( mA )

95 11031

t / t – Turn on / Turn off Time ( s )

off

Saturated Operation

VS=5V

RL=1k

toff

ton

Figure 13. Turn on / off Time vs. Forward Current

TCLT1000

901WTK27

Date

Code

(YM)

Company

Logo Production

Location

Pin 1 Indication Type

15244

System

Letter

Figure 14. Marking example

TCLT10.. Series

Vishay Semiconductors

9 (12)

www.vishay.comDocument Number 83515

Rev. A3, 19–Mar–01

Dimensions of TCLT10.. in mm

15243

TCLT10.. Series

Vishay Semiconductors

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10 (12) Rev. A3, 19–Mar–01

Document Number 83515

Dimensions of Reel in mm

16515

Reel Hub

Version Tape Width A N W1W2 max

G 16 330 ±1 100 ± 1.5 16.4 + 2 22.4

Dimensions of Leader and Trailer in mm

Trailer Leader

no devices no devices

min. 200 min. 400

StartEnd

96 11818

devices

TCLT10.. Series

Vishay Semiconductors

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www.vishay.comDocument Number 83515

Rev. A3, 19–Mar–01

Dimensions of Tape in mm

16516

TCLT10.. Series

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12 (12) Rev. A3, 19–Mar–01

Document Number 83515

Ozone Depleting Substances Policy Statement

It is the policy of V ishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as

their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of

ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the

buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or

indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423