1. Product profile
1.1 General description
NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors are fully isolated internally.
1.2 Features
nCurrent gain matching
nBase-emitter voltage matching
nDrop-in replacement for standard double transistors
1.3 Applications
nCurrent mirror
nDifferential amplifier
1.4 Quick reference data
BCM847BV; BCM847BS;
BCM847DS
NPN/NPN matched double transistors
Rev. 06 — 28 August 2009 Product data sheet
Table 1. Product overview
Type number Package PNP/PNP
complement Matched version of
NXP JEITA
BCM847BV SOT666 - BCM857BV BC847BV
BCM847BS SOT363 SC-88 BCM857BS BC847BS
BCM847DS SOT457 SC-74 BCM857DS -
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO collector-emitter voltage open base - - 45 V
ICcollector current - - 100 mA
hFE DC current gain VCE =5V;
IC=2mA 200 290 450
BCM847BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 28 August 2009 2 of 15
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors
[1] The smaller of the two values is taken as the numerator.
[2] The smaller of the two values is subtracted from the larger value.
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Per device
hFE1/hFE2 hFE matching VCE =5V;
IC=2mA [1] 0.9 1 -
VBE1−VBE2 VBE matching VCE =5V;
IC=2mA [2] --2mV
Table 2. Quick reference data
…continued
Symbol Parameter Conditions Min Typ Max Unit
Table 3. Pinning
Pin Description Simplified outline Symbol
1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1
001aab555
6 45
1 32
sym020
2
13
5
6
TR1 TR2
4
Table 4. Ordering information
Type number Package
Name Description Version
BCM847BV - plastic surface-mounted package; 6 leads SOT666
BCM847BS SC-88 plastic surface-mounted package; 6 leads SOT363
BCM847DS SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 5. Marking codes
Type number Marking code[1]
BCM847BV 3A
BCM847BS M1*
BCM847DS R6
BCM847BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 28 August 2009 3 of 15
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 45 V
VEBO emitter-base voltage open collector - 6 V
ICcollector current - 100 mA
ICM peak collector current single pulse;
tp≤1ms - 200 mA
Ptot total power dissipation Tamb ≤25 °C
SOT666 [1][2] - 200 mW
SOT363 [1] - 200 mW
SOT457 [1] - 250 mW
Per device
Ptot total power dissipation Tamb ≤25 °C
SOT666 [1][2] - 300 mW
SOT363 [1] - 300 mW
SOT457 [1] - 380 mW
Tjjunction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
Rth(j-a) thermal resistance from
junction to ambient in free air
SOT666 [1][2] - - 625 K/W
SOT363 [1] - - 625 K/W
SOT457 [1] - - 500 K/W
BCM847BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 28 August 2009 4 of 15
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Per device
Rth(j-a) thermal resistance from
junction to ambient in free air
SOT666 [1][2] - - 416 K/W
SOT363 [1] - - 416 K/W
SOT457 [1] - - 328 K/W
Table 7. Thermal characteristics
…continued
Symbol Parameter Conditions Min Typ Max Unit
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
ICBO collector-base cut-off
current VCB =30V;
IE=0A - - 15 nA
VCB =30V;
IE=0A;
Tj= 150 °C
--5µA
IEBO emitter-base cut-off
current VEB =5V;
IC=0A - - 100 nA
hFE DC current gain VCE =5V;
IC=10µA- 250 -
VCE =5V;
IC=2mA 200 290 450
VCEsat collector-emitter
saturation voltage IC=10mA;
IB= 0.5 mA - 50 200 mV
IC= 100 mA;
IB=5mA - 200 400 mV
VBEsat base-emitter
saturation voltage IC=10mA;
IB= 0.5 mA [1] - 760 - mV
IC= 100 mA;
IB=5mA [1] - 910 - mV
VBE base-emitter voltage VCE =5V;
IC=2mA [2] 610 660 710 mV
VCE =5V;
IC=10mA [2] - - 770 mV
Cccollector capacitance VCB =10V;
IE=i
e=0A;
f = 1 MHz
- - 1.5 pF
Ceemitter capacitance VEB = 0.5 V;
IC=i
c=0A;
f = 1 MHz
-11-pF
BCM847BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 28 August 2009 5 of 15
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors
[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value.
fTtransition frequency VCE =5V;
IC=10mA;
f = 100 MHz
100 250 - MHz
NF noise figure VCE =5V;
IC= 0.2 mA;
RS=2kΩ;
f = 10 Hz to
15.7 kHz
- 2.8 - dB
VCE =5V;
IC= 0.2 mA;
RS=2kΩ;
f = 1 kHz;
B = 200 Hz
- 3.3 - dB
Per device
hFE1/hFE2 hFE matching VCE =5V;
IC=2mA [3] 0.9 1 -
VBE1−VBE2 VBE matching VCE =5V;
IC=2mA [4] --2mV
Table 8. Characteristics
…continued
T
amb
=25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
BCM847BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 28 August 2009 6 of 15
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors
Tamb =25°CV
CE =5V
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Fig 1. Collector current as a function of
collector-emitter voltage; typical values Fig 2. DC current gain as a function of collector
current; typical values
IC/IB=20
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
IC/IB=20
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Fig 3. Base-emitter saturation voltage as a function
of collector current; typical values Fig 4. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa532
VCE (V)
0108462
0.08
0.12
0.04
0.16
0.20
IC
(A)
0
IB (mA) = 4.50
2.70
3.15
4.05
3.60
0.45
0.90
1.35
1.80
2.25
006aaa533
200
400
600
hFE
0
IC (mA)
10−2103
102
10−1101
(3)
(1)
(2)
006aaa534
IC (mA)
10−1103
102
110
0.5
0.9
1.3
0.3
0.7
1.1
VBEsat
(V)
0.1
(1)
(2)
(3)
006aaa535
1
10−1
10
VCEsat
(V)
10−2
IC (mA)
10−1103
102
110
(1)
(2)
(3)
BCM847BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 28 August 2009 7 of 15
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors
VCE =5V; T
amb =25°CV
CE =5V; T
amb =25°C
Fig 5. Base-emitter voltage as a function of collector
current; typical values Fig 6. Transition frequency as a function of collector
current; typical values
f = 1 MHz; Tamb =25°C f = 1 MHz; Tamb =25°C
Fig 7. Collector capacitance as a function of
collector-base voltage; typical values Fig 8. Emitter capacitance as a function of
emitter-base voltage; typical values
006aaa536
0.6
0.8
1
VBE
(V)
0.4
IC (mA)
10−1103
102
110
006aaa537
IC (mA)
110
2
10
102
103
fT
(MHz)
10
006aaa538
VCB (V)
0108462
2
1
3
5
4
Cc
(pF)
0
006aaa539
VEB (V)
0642
9
11
7
13
15
Ce
(pF)
5
BCM847BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 28 August 2009 8 of 15
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors
8. Application information
9. Package outline
Fig 9. Current mirror Fig 10. Differential amplifier
006aaa523
VCC
lout
R1
TR2TR1
006aaa525
IN2IN1 TR2TR1
OUT2
V+
V−
OUT1
Fig 11. Package outline SOT666 Fig 12. Package outline SOT363 (SC-88)
Fig 13. Package outline SOT457 (SC-74)
Dimensions in mm 04-11-08
1.7
1.5
1.7
1.5
1.3
1.1
1
0.18
0.08
0.27
0.17
0.5
pin 1 index
123
456
0.6
0.5
0.3
0.1
06-03-16Dimensions in mm
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0 1.35
1.15
2.2
1.8 1.1
0.8
0.45
0.15
132
465
04-11-08Dimensions in mm
3.0
2.5 1.7
1.3
3.1
2.7
pin 1 index
1.9
0.26
0.10
0.40
0.25
0.95
1.1
0.9
0.6
0.2
132
4
56
BCM847BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 28 August 2009 9 of 15
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 4000 8000 10000
BCM847BV SOT666 2 mm pitch, 8 mm tape and reel - - -315 -
4 mm pitch, 8 mm tape and reel - -115 - -
BCM847BS SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135
4 mm pitch, 8 mm tape and reel; T2 [3] -125 - - -165
BCM847DS SOT457 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135
4 mm pitch, 8 mm tape and reel; T2 [3] -125 - - -165
BCM847BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 28 August 2009 10 of 15
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors
11. Soldering
Reflow soldering is the only recommended soldering method.
Fig 14. Reflow soldering footprint SOT666
Fig 15. Reflow soldering footprint SOT363 (SC-88)
solder lands
placement area
occupied area
solder paste
sot666_fr
2.75
2.45
2.1
1.6
0.4
(6×)
0.55
(2×)
0.25
(2×)
0.6
(2×)
0.65
(2×)
0.3
(2×)
0.325
(4×)
0.45
(4×)
0.5
(4×)
0.375
(4×)
1.72
1.7
1.0750.538
Dimensions in mm
solder lands
solder resist
occupied area
solder paste
sot363_fr
2.65
2.35 0.4 (2×)
0.6
(2×)
0.5
(4×)
0.5
(4×)
0.6
(4×)
0.6
(4×)
1.5
1.8
Dimensions in mm
BCM847BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 28 August 2009 11 of 15
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors
Fig 16. Wave soldering footprint SOT363 (SC-88)
Dimensions in mm
Fig 17. Reflow soldering footprint SOT457 (SC-74)
sot363_fw
solder lands
solder resist
occupied area
preferred transport
direction during soldering
5.3
1.3 1.3
1.5
0.3
1.5
4.5
2.45
2.5
Dimensions in mm
solder lands
solder resist
occupied area
solder paste
0.95
2.825 0.45 0.55
1.60
1.95
3.45
1.70
3.10
3.20
3.30
msc422
BCM847BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 28 August 2009 12 of 15
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors
Dimensions in mm
Fig 18. Wave soldering footprint SOT457 (SC-74)
1.40
4.30
5.30
0.45
msc423
1.45 4.45
5.05
solder lands
solder resist
occupied area
BCM847BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 28 August 2009 13 of 15
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors
12. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BCM847BV_BS_DS_6 20090828 Product data sheet - BCM847BV_BS_DS_5
Modifications: •This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•Figure 12 “Package outline SOT363 (SC-88)”: updated
•Figure 14 “Reflow soldering footprint SOT666”: updated
•Figure 15 “Reflow soldering footprint SOT363 (SC-88)”: updated
•Figure 16 “Wave soldering footprint SOT363 (SC-88)”: updated
•Figure 18 “Wave soldering footprint SOT457 (SC-74)”: updated
BCM847BV_BS_DS_5 20060627 Product data sheet - BCM847BS_DS_4
BCM847BS_DS_4 20060216 Product data sheet - BCM847BS_DS_3
BCM847BS_DS_3 20060123 Product data sheet - BCM847BS_2
BCM847BS_2 20050406 Product data sheet - BCM847BS_1
BCM847BS_1 20040914 Product data sheet - -
BCM847BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 28 August 2009 14 of 15
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BCM847BV/BS/DS
NPN/NPN matched double transistors
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 28 August 2009
Document identifier: BCM847BV_BS_DS_6
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Application information. . . . . . . . . . . . . . . . . . . 8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information. . . . . . . . . . . . . . . . . . . . . . 9
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
14 Contact information. . . . . . . . . . . . . . . . . . . . . 14
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
