R1172x SERIES
SUPER LOW ON RESISTANCE / LOW VOLTAGE 1A LDO
NO.EA-122-090617
1
OUTLINE
The R1172x Series are CMOS-based positive volta ge regulator ICs. The R1172x Series h ave features of super
low dropout, 1A output current capability. Even the output voltage is set at 1.5V, on resistance of internal FET is
typically 0.32Ω. Therefore, applications that require a large current at small dropout are suitable for the R1172x
series. Low input voltage is acceptable and low output voltage can be set. The minimum input voltage is 1.4V,
and the lowest set output voltage is 0.8V. Each of these ICs consists of a voltage reference unit, an error
amplifier, resistor net for setting output voltage, a current limit circuit at over-current, a chip enable circuit, a
thermal-shutdown circuit, and so on. A stand-by mode with ultra low consumption current can be realized with
the chip enable pin. The output voltage o f R1172 is fixed in the IC.
Since the packages for these ICs are SOT-23-5, SOT-89-5, HSON-6, and HSOP-6J with high power
dissipation, high density mounting of the ICs on boards is possible.
FEATURES
• Output Current ............................................................1A
• Supply Current .............................................................Typ. 60μA
• Standby Current ..........................................................Typ. 0.1μA
• Input Voltage Range ...................................................1.4V to 6.0V
• Output Voltage..............................................................Stepwise setting with a step of 0.1V in the range of
0.8V to 5.0V
• Dropout Voltage............................................................Typ. 0.32V (VOUT=1.5V, IOUT=1A)
Typ. 0.18V (VOUT=2.8V, IOUT=1A)
• Ripple Rejection...........................................................Typ. 70dB (VOUT=2.8V)
• Output Voltage Accuracy..............................................±2.0%
• Temperature-Drift Coefficient of Output Voltage ..........Typ. ±100ppm/°C
• Line Regulation ............................................................Typ. 0.05%/V
• Load Regulation .........................................................Typ. 15mV at IOUT=300mA, Typ. 50mV at IOUT=1A
• Packages ....................................................................SOT-23-5, SOT-89-5, HSON-6, HSOP-6J
• Built-in Inrush current limit circuit ...............................Typ. 500 mA
• Built-in Fold-Back Protection Circuit ...........................Typ. 250mA (Current at short mode)
• Built-in Thermal Shutdown Circuit ..............................Thermal Shutdown Temperature ; Typ. 150°C
Released Temperature ; Typ. 120°C
• Built-in Auto Discharge Function ................................D version
• Output capacitors .......................................................CIN=COUT=Tant alum 4.7μF (VOUT < 1.0V)
CIN=COUT=Ceramic 4.7μF (VOUT
>
=
1.0V)
APPLICATIONS
• Local Power source for Notebook PC.
• Local Power source for portable communication equipments, cameras, and VCRs.
• Local Power source for home appliances.
R1172x
2
BLOCK DIAGRAMS
R1172xxx1A
VDD
GND
VOUT
Vref
Current Lim i t
Therm al Shutdown
CE
R1172xxx1B
VDD
GND
VOUT
CE
Vref
Current Limit
Thermal Shutdown
R1172xxx1D
VDD
GND
VOUT
CE
Vref
Current Lim i t
Thermal Shutdown
SELECTION GUIDE
The output voltage, auto discharge function*, and the package type for the ICs can be selected at the user’s
request. The selection can be made with designating the part number as sho wn below;
R1172xxx1x-xx -x ←Part Number
↑ ↑ ↑ ↑ ↑
a b c d e
Code Contents
a Designation of Packa ge Type;
N: SOT-23-5, H: SOT-89-5, D: HSON-6, S: HSOP-6J
b
Setting Output Voltage (VOUT);
Stepwise setting with a step of 0.1V in the range of 0.8V to 5.0V (HSOP-6J : 0.8V to 3.5V)
is possible.
Exceptions; 1.25V output: R1172x121x5-xx-x, 1.85V output: R1172x181x5-xx-x,
2.85V output: R1172x281x5-xx-x
c
Designation of option;
A: active low, without auto discharge function*
B: active high, without auto discharge function*
D: active high, with auto discharge function*
d Designation of Taping Type;
T1 (SOT-89-5), TR (SOT-23-5, HSON-6), E2 (HSOP-6J) Refer to Taping Specifications.
e Designation of composition of pin plating;
-F: Lead free solder plating
*) When the mode is into standby with CE signal, auto discharge transistor turns on, and it makes the turn-off
speed faster than normal type.
R1172x
3
PIN CONFIGURATIONS
SOT-23-5 SOT-89-5
1
4
5
2 3
(mark side)
13
54
2
HSON-6 HSOP-6J
Top View Bottom View
∗
∗
∗
4 5 6
3 2 1
6 5 4
1 2 3
13
64
2
5
PIN DESCRIPTIONS
• SOT-23-5 • SOT-89-5
Pin No. Symbol Description Pin No. Symbol Description
1 VOUT Voltage Regulator Output Pin 1 CE or CE Chip Enable Pin
2 GND Ground Pin 2 GND Ground Pin
3 VDD Input Pin 3 NC No Connection
4 NC No Connection 4 VDD Input Pin
5 CE or CE Chip Enable Pin 5 VOUT Voltage Regulator Output Pin
• HSON-6*1 • HSOP-6J
Pin No. Symbol Description Pin No. Symbol Description
1 VOUT*2 Voltage Regulator Output Pin 1 VOUT Voltage Regulator Output Pin
2 VOUT*2 Voltage Regulator Output Pin 2 GND Ground Pin
3 CE or CE Chip Enable Pin 3 CE or CE Chip Enable Pin
4 GND Ground Pin 4 NC No Connection
5 VDD Input Pin 5 GND Ground Pin
6 VDD Input Pin 6 VDD Input Pin
*1) Tab in the parts have GND level. (They are connected to the reverse side of this IC.)
Do not connect to other wires or land patterns.
*2) Connect Pin1 and Pin2 as short as possible.
R1172x
4
ABSOLUTE MAXIMUM RATINGS
Symbol Item Rating Unit
VIN Input Voltage 6.5 V
VCE Input Voltage ( CE or CE Input Pin) −0.3 to 6.5 V
VOUT Output Voltage −0.3 to VIN+0.3 V
IOUT Output Current 1.4 A
Power Dissipation (SOT-23-5) * 420
Power Dissipation (SOT-89-5) * 900
Power Dissip ation (HSON-6) * 900
PD
Power Dissipation (HSOP-6J) * 1700
mW
Topt Operating Temperature Range −40 to 85 °C
Tstg Storage Temperature Range −55 to 125 °C
*) For Power Dissipation, please refer to PACKAGE INFORMATION.
(Includes additional information of High Wattage L and Pattern)
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the
permanent damages and may degrade the life time and safety for both device and system u sing the device
in the field.
The functional operation at or over these absolute maximum ratings is not assured.
R1172x
5
ELECTRICAL CHARACTERISTICS
• R1172xxx1A Topt=25°C
Symbol Item Conditions Min. Typ. Max. Unit
VIN Input Voltage 1.4 6.0 V
ISS Supply Current VIN−VOUT=1.0V, VCE=0V,
IOUT =0A 60 100
μA
Istandby Standby Current VIN= 6.0V, VCE=VIN 0.1 1.0 μA
VOUT > 1.5V ×0.98 ×1.02 V
VOUT Output Voltage VIN−VOUT=1.0V
IOUT=100mA VOUT
<
=
1.5V −30 +30 mV
IOUT Output Current VIN−VOUT=1.0V 1 A
VIN−VOUT=0.3V
1mA
<
=
IOUT
<
=
300mA
If VOUT
<
=
1.1V, then VIN=1.4V −15 15 30
ΔVOUT/
ΔIOUT Load Regulation VIN−VOUT=0.3V
1mA
<
=
IOUT
<
=
1A
If VOUT
<
=
1.1V, then VIN=1.7V 50
mV
VDIF Dropout Voltage Refer to Dropout Voltage Table
ΔVOUT/
ΔVIN Line Regulation
IOUT=100mA
VOUT+0.5V
<
=
VIN
<
=
6.0V
If VOUT
<
=
0.9V,
1.4V
<
=
VIN
<
=
6.0V
0.05 0.20 %/V
RR Ripple Rejection
f=1kHz (VOUT
<
=
4.0V)
f=1kHz (VOUT > 4.0V)
Ripple 0.5Vp-p, VIN−VOUT=1.0V,
IOUT=100mA
If VOUT
<
=
1.2V, VIN−VOUT=1.5V,
IOUT=100mA
70
60
dB
ΔVOUT/
ΔTopt Output Voltage
Temperature Coefficient IOUT=100mA
−40°C
<
=
Topt
<
=
85°C ±100 ppm/°C
Ilim Short Current Limit VOUT=0V 250 mA
RPU Pull-up Resistance for CE pin 1.9 5.0 15.0
MΩ
VCEH CE Input Voltage "H" 1.0 6.0 V
VCEL CE Input Voltage "L" 0 0.4 V
TTSD Thermal Shut down
Temperature Junction Temperature 150 °C
TTSR Thermal Shut down
Released Temperature Junction Temperature 120 °C
en Output Noise BW=10Hz to 100kHz 30
μVrms
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment sho uld b e designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or su rge. And the semicondu ctor devices may receive seriou s damage when they continu e
to operate over the recommended operating conditions.
R1172x
6
• R1172xxx1B/D Topt=25°C
Symbol Item Conditions Min. Typ. Max. Unit
VIN Input Voltage 1.4 6.0 V
ISS Supply Current VIN−VOUT=1.0V, VIN=VCE,
IOUT=0A 60 100
μA
Istandby Standby Current VIN= 6.0V, VCE=0V 0.1 1.0 μA
VOUT > 1.5V ×0.98 ×1.02 V
VOUT Output Voltage VIN−VOUT=1.0V
IOUT=100mA VOUT
<
=
1.5V −30 +30 mV
IOUT Output Current VIN−VOUT=1.0V 1 A
VIN−VOUT=0.3V
1mA
<
=
IOUT
<
=
300mA
If VOUT
<
=
1.1V, then VIN=1.4V −15 15 30
ΔVOUT/
ΔIOUT Load Regulation VIN−VOUT=0.3V
1mA
<
=
IOUT
<
=
1A
If VOUT
<
=
1.1V, then VIN=1.7V 50
mV
VDIF Dropout Voltage Refer to Dropout Voltage Table
ΔVOUT/
ΔVIN Line Regulation
IOUT=100mA
VOUT+0.5V
<
=
VIN
<
=
6.0V
If VOUT
<
=
0.9V,
1.4V
<
=
VIN
<
=
6.0V
0.05 0.20 %/V
RR Ripple Rejection
f=1kHz (VOUT
<
=
4.0V)
f=1kHz (VOUT > 4.0V)
Ripple 0.5Vp-p, VIN−VOUT=1.0V
IOUT=100mA
If VOUT
<
=
1.2V, VIN−VOUT=1.5V,
IOUT=100mA
70
60
dB
ΔVOUT/
ΔTopt Output Voltage
Temperature Coefficient IOUT=100mA
−40°C
<
=
Topt
<
=
85°C ±100 ppm/°C
Ilim Short Current Limit VOUT=0V 250 mA
RPD Pull-down Resista nce for CE
pin 1.9 5.0 15.0
MΩ
VCEH CE Input Voltage "H" 1.0 6.0 V
VCEL CE Input Voltage "L" 0 0.4 V
TTSD Thermal Shut down
Temperature Junction Temperature 150 °C
TTSR Thermal Shut down
Released Temperature Junction Temperature 120 °C
en Output Noise BW=10Hz to 100kHz 30
μVrms
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment sho uld b e designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or su rge. And the semicondu ctor devices may receive seriou s damage when they continu e
to operate over the recommended operating conditions.
R1172x
7
• Dropout Voltage by Output Voltage Topt=25°C
Dropout Voltage VDIF (V)
IOUT=300mA IOUT=1A
Output Voltage
VOUT (V) Typ. Max. Typ.
0.8
<
=
VOUT < 0.9 0.33 0.57 0.72
0.9
<
=
VOUT < 1.0 0.22 0.47 0.64
1.0
<
=
VOUT < 1.5 0.18 0.32 0.56
1.5
<
=
VOUT < 2.6 0.10 0.15 0.32
2.6
<
=
VOUT 0.05 0.10 0.18
R1172x
8
TYPICAL APPLICATION (R1172xxx1B/D)
C1 R1172x
Series
VDD VOUT
CE GND
C2
VOUT
TECHNICAL NOTES
When using these ICs, consider the following p oints:
Phase Compensation
In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For
this purpose, use a capacitor C2 with good frequ ency characteristics and ESR (Equivalent Series Resista nce).
The recommendation value is as follows.
Output Voltage C2 recommendation value Components Recommendation
VOUT < 1.0V Tantalum 4.7μF or more
1.0
<
=
VOUT
<
=
3.3V Ceramic 4.7μF or more
Kyocera
Murata
Murata
4.7
μ
F (1608)
4.7
μ
F (1608)
10
μ
F (1608)
Part Number : CM105X5R475M06AB
Part Number : GRM188R60J475KE19B
Part Number : GRM188B30G106ME46B
3.3V < VOUT Ceramic 4.7μF or more
Kyocera
Murata 4.7
μ
F (thin 2012)
10
μ
F (2012) Part Number : CT21X5R475M06AB
Part Number : GRM21BB30J106K
∗
∗
PCB Layout
Make VDD and GND lines sufficient. If their impedance is high, noise pickup or unstable operation may result.
Connect a capacitor C1 with a capacitance value as much as 4.7μF or more between VDD and GND pin, and as
close as possible to the pins.
Set external components, especially the output capacitor C2, as close as possible to the ICs, and make wiring
as short as possible.
If you use a tantalum type capacitor and ESR value of the capacitor is large, output might be unstable.
Evaluate your circuit with considering frequency characteristics.
Depending on the capacitor size, manufacturer, and part number, the bias characteristics and temperature
characteristics are different. Evaluate the circuit with actual using capacitors.
R1172x
9
TYPICAL CHARACTERISTICS
1) Output Voltage vs. Output Current (Topt=25°C)
R1172x081x R1172x151x
VDD=1.4V
VDD=1.5V
VDD=1.6V
VDD=2.0V
VDD=2.8V
0 15001000500 2000
Output Current IOUT(mA)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.9
0.8
Output Voltage V
OUT
(V)
VDD=1.8V
VDD=2.5V
VDD=3.5V
0 15001000500 2000
Output Current IOUT(mA)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Output Voltage V
OUT
(V)
R1172x301x R1172x401x
VDD=3.3V
VDD=4.0V
VDD=5.0V
0 15001000500 2000
Output Current IOUT(mA)
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Output Voltage V
OUT
(V)
V
DD=
4.3V
V
DD=
5.0V
V
DD=
6.0V
0 15001000500 2000
Output Current I
OUT
(mA)
0.0
1.0
0.5
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Output Voltage V
OUT
(V)
R1172x501x
VDD=5.3V
VDD=6.0V
0 15001000500 2000
Output Current IOUT(mA)
0.0
3.0
2.0
1.0
4.0
5.0
6.0
Output Voltage V
OUT
(V)
R1172x
10
2) Output Voltage vs. Input Voltage (Topt=25°C)
R1172x081x R1172x151x
I
OUT=1
mA
I
OUT=50
mA
I
OUT=99
mA
I
OUT=300
mA
0654321 Input Voltage V
IN
(V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Output Voltage V
OUT
(V)
I
OUT=1
mA
I
OUT=50
mA
I
OUT=99
mA
I
OUT=300
mA
0654321 Input Voltage V
IN
(V)
0.0
0.6
0.4
0.2
0.8
1.0
1.2
1.4
1.6
Output Voltage V
OUT
(V)
R1172x301x R1172x401x
I
OUT=1
mA
I
OUT=50
mA
I
OUT=99
mA
I
OUT=300
mA
0654321 Input Voltage V
IN
(V)
0.0
1.2
0.8
0.4
1.6
2.0
2.4
2.8
3.2
Output Voltage V
OUT
(V)
I
OUT=1
mA
I
OUT=50
mA
I
OUT=99
mA
I
OUT=300
mA
0654321 Input Voltage V
IN
(V)
0.0
2.0
1.5
1.0
0.5
2.5
3.0
3.5
4.0
4.5
Output Voltage V
OUT
(V)
R1172x501x
I
OUT=1
mA
I
OUT=50
mA
I
OUT=99
mA
I
OUT=300
mA
0654321 Input Voltage V
IN
(V)
0.0
3.0
2.5
2.0
1.5
1.0
0.5
3.5
4.0
4.5
5.0
5.5
Output Voltage V
OUT
(V)
R1172x
11
3) Supply Current vs. Input Current (Topt=25°C)
R1172x081x R1172x151x
0241356
Input Voltage V
IN
(V)
0
10
20
30
40
50
60
70
Supply Current ISS(µA)
0241356
Input Voltage V
IN
(V)
0
10
20
30
40
50
60
70
Supply Current I
SS
(μA)
R1172x301x R1172x401x
0241356
Input Voltage V
IN
(V)
0
10
20
30
40
50
60
70
Supply Current ISS(μA)
0241356
Input Voltage V
IN
(V)
0
10
20
30
40
50
60
70
Supply Current ISS(μA)
R1172x501x
0241356
Input Voltage V
IN
(V)
0
10
20
30
40
50
60
70
Supply Current ISS(μA)
R1172x
12
4) Output Voltage vs. Temperature (IOUT=100mA)
R1172x081x R1172x151x
-50 0 50-25 25 75 100
Temperature Topt(°C)
0.76
0.77
0.78
0.79
0.80
0.81
0.82
0.83
Output Voltage V
OUT
(V)
V
IN
=1.8V
-50 0 50-25 25 75 100
Temperature Topt(°C)
1.46
1.47
1.48
1.49
1.50
1.51
1.52
1.53
Output Voltage V
OUT
(V)
V
IN
=2.5V
R1172x301x R1172x501x
-50 0 50-25 25 75 100
Temperature Topt(°C)
2.92
2.94
2.96
2.98
3.00
3.02
3.04
3.06
Output Voltage V
OUT
(V)
V
IN
=4.0V
-50 0 50-25 25 75 100
Temperature Topt(°C)
4.88
4.90
4.92
4.94
4.96
4.98
5.00
5.02
Output Voltage V
OUT
(V)
V
IN
=6.0V
5) Supply Current vs. Temperature
R1172x081x R1172x151x
-50 0 50-25 25 75 100
Temperature Topt(°C)
0
10
20
30
40
50
60
70
80
Supply Current I
SS
(μA)
V
IN
=1.8V
-50 0 50-25 25 75 100
Temperature Topt(°C)
0
10
20
30
40
50
60
70
80
Supply Current I
SS
(μA)
V
IN
=2.5V
R1172x
13
R1172x301x R1172x501x
-50 0 50-25 25 75 100
Temperature Topt(°C)
0
10
20
30
40
50
60
70
80
Supply Current I
SS
(μA)
V
IN
=4.0V
-50 0 50-25 25 75 100
Temperature Topt(°C)
0
10
20
30
40
50
60
70
80
Supply Current I
SS
(μA)
V
IN
=6.0V
6) Dropout Voltage vs. Output Current
R1172x081x R1172x091x
85°C
25°C
-40°C
0 400 600200 800 1000
Output Current I
OUT
(mA)
0
100
200
300
400
500
600
700
800
Dropout Voltage V
DIF
(mV)
85°C
25°C
-40°C
0 400 600200 800 1000
Output Current I
OUT
(mA)
0
100
200
300
400
500
600
700
Dropout Voltage V
DIF
(mV)
R1172x101x R1172x151x
85°C
25°C
-40°C
0 400 600200 800 1000
Output Current I
OUT
(mA)
0
100
200
300
400
500
600
Dropout Voltage V
DIF
(mV)
85°C
25°C
-40°C
0 400 600200 800 1000
Output Current IOUT(mA)
0
50
100
150
200
250
300
350
400
Dropout Voltage V
DIF
(mV)
R1172x
14
R1172x301x R1172x501x
85°C
25°C
-40°C
0 400 600200 800 1000
Output Current IOUT(mA)
0
50
100
150
200
250
Dropout Voltage V
DIF
(mV)
85°C
25°C
-40°C
0 400 600200 800 1000
Output Current I
OUT
(mA)
0
40
20
60
80
100
120
140
180
160
200
Dropout Voltage V
DIF
(mV)
7) Dropout Voltage vs. Set Output Voltage 8) 0.8V Output type, Operating Input Voltage Range
R1172xxx1x R1172x081x
021435
Set Output Voltage V
REG
(V)
0
100
200
300
400
500
600
800
700
100mA
200mA
400mA
600mA
800mA
1000mA
Dropout Voltage VDIF(mV)
Operating Input Voltage Range
0 800600200 400 1000
Output Current IOUT(mA)
Input Voltage VIN(V)
0.8
1.0
1.2
1.4
1.6
1.8
9) Ripple Rejection vs. Input Bias
R1172x301x R1172x301x
200Hz
1kHz
10kHz
1000kHz
3.0 3.2 3.43.1 3.3 3.5
Input Voltage V
IN
(V)
0
10
20
30
40
50
60
70
80
90
Ripple Rejection RR(dB)
V
IN
=4.0V
DC
+0.2Vp-p,I
OUT
=1mA
200Hz
1kHz
10kHz
1000kHz
3.0 3.2 3.43.1 3.3 3.5
Input Voltage V
IN
(V)
0
10
20
30
40
50
60
70
80
90
Ripple Rejection RR(dB)
V
IN
=4.0V
DC
+0.5Vp-p,I
OUT
=1mA
R1172x
15
R1172x301x R1172x301x
200Hz
1kHz
10kHz
1000kHz
3.0 3.2 3.43.1 3.3 3.5
Input Voltage V
IN
(V)
0
10
20
30
40
50
60
70
80
90
Ripple Rejection RR(dB)
V
IN
=4.0V
DC
+0.2Vp-p,I
OUT
=10mA
200Hz
1kHz
10kHz
1000kHz
3.0 3.2 3.43.1 3.3 3.5
Input Voltage V
IN
(V)
0
10
20
30
40
50
60
70
80
90
Ripple Rejection RR(dB)
V
IN
=4.0V
DC
+0.5Vp-p,I
OUT
=10mA
R1172x301x R1172x301x
200Hz
1kHz
10kHz
1000kHz
3.0 3.2 3.43.1 3.3 3.5
Input Voltage V
IN
(V)
0
10
20
30
40
50
60
70
80
90
Ripple Rejection RR(dB)
V
IN
=4.0V
DC
+0.2Vp-p,I
OUT
=100mA
200Hz
1kHz
10kHz
1000kHz
3.0 3.2 3.43.1 3.3 3.5
Input Voltage V
IN
(V)
0
10
20
30
40
50
60
70
80
90
Ripple Rejection RR(dB)
V
IN
=4.0V
DC
+0.5Vp-p,I
OUT
=100mA
10) Ripple Rejection vs. Frequency
R1172x081x R1172x101x
0.1 101 100
Frequency f(kHz)
I
OUT
=1mA
I
OUT
=30mA
I
OUT
=100mA
Ripple Rejection RR(dB)
0
10
20
30
40
50
70
60
80
V
IN
=1.8V
DC
+0.5Vp-p,
C
OUT
=Tantalum
4.7μF
0.1 101 100
Frequency f(kHz)
I
OUT
=1mA
I
OUT
=30mA
I
OUT
=100mA
Ripple Rejection RR(dB)
0
10
20
30
40
50
70
60
80
90
V
IN
=2.0V
DC
+0.5Vp-p,
C
OUT
=Ceramic
4.7μF
R1172x
16
R1172x301x R1172x401x
0.1 101 100
Frequency f(kHz)
I
OUT
=1mA
I
OUT
=30mA
I
OUT
=100mA
Ripple Rejection RR(dB)
0
10
20
30
40
50
70
60
80
90
V
IN
=4.0V
DC
+0.5Vp-p,
C
OUT
=Ceramic
4.7μF
0.1 101 100
Frequency f(kHz)
I
OUT
=1mA
I
OUT
=30mA
I
OUT
=100mA
Ripple Rejection RR(dB)
0
10
20
30
40
50
70
60
80
90
V
IN
=5.0V
DC
+0.5Vp-p,
C
OUT
=Ceramic
4.7μF
R1172x451x R1172x501x
0.1 101 100
Frequency f(kHz)
I
OUT
=1mA
I
OUT
=30mA
I
OUT
=100mA
Ripple Rejection RR(dB)
0
10
20
30
40
50
70
60
80
V
IN
=5.5V
DC
+0.5Vp-p,
C
OUT
=Ceramic
4.7μF
0.1 101 100
Frequency f(kHz)
I
OUT
=1mA
I
OUT
=30mA
I
OUT
=100mA
Ripple Rejection RR(dB)
0
10
20
30
40
50
70
60
80
V
IN
=6.0V
DC
+0.5Vp-p,
C
OUT
=Ceramic
4.7μF
11) Line Transient Response (tr=tf=5μs, IOUT=100mA)
R1172x081x R1172x101x
0203010 40 50 60 70 80 90 100
Time t(μs)
0.76
0
1
2
3
4
0.78
0.80
0.82
0.86
0.84
0.88
0.90
Input Voltage V
IN
(V)
Output Voltage V
OUT
(V)
C
OUT
=Tantalum
4.7μF
Input Voltage
Output Voltage
0203010 40 50 60 70 80 90 100
Time t(μs)
0.96
0
1
2
3
4
0.98
1.00
1.02
1.06
1.04
1.08
1.10
Input Voltage V
IN
(V)
Output Voltage V
OUT
(V)
C
OUT
=Ceramic
4.7μF
Input Voltage
Output Voltage
R1172x
17
R1172x301x R1172x501x
0203010 40 50 60 70 80 90 100
Time t(μs)
2.94
0
1
2
3
4
5
6
2.97
3.00
3.03
3.09
3.06
3.12
3.15
Input Voltage V
IN
(V)
Output Voltage V
OUT
(V)
C
OUT
=Ceramic
4.7μF
Input Voltage
Output Voltage
0203010 40 50 60 70 80 90 100
Time t(μs)
4.94 0
1
2
3
4
5
6
7
4.97
5.00
5.03
5.09
5.06
5.12
5.15
Input Voltage V
IN
(V)
Output Voltage V
OUT
(V)
C
OUT
=Ceramic
4.7μF
Input Voltage
Output Voltage
12) Load Transient Response (tr=tf=500ns)
R1172x081x R1172x081x
0203010 40 50 60 70 80 90 100
Time t(μs)
600
400
200
0
0.68
0.74
0.80
0.92
0.86
0.98
1.04
Output Voltage
VIN=1.8V,CIN=COUT= Tantalum 4.7μF
Output Current I
OUT
(mA)
Output Voltage V
OUT
(V)
Output Current
0462 8 10 12 14 16 18 20
Time t(μs)
150
100
50
0
0.76
0.80
0.84
0.92
0.88
0.96
1.00
Output Current I
OUT
(
m
A)
Output Voltage V
OUT
(V)
Output Current
Output Voltage
VIN=1.8V,CIN=COUT= Tantalum 4.7μF
R1172x081x R1172x081x
0203010 40 50 60 70 80 90 100
Time t(μs)
40
20
0
0.76
0.80
0.84
0.92
0.88
0.96
1.00
Output Voltage
VIN=1.8V,CIN=COUT= Tantalum 4.7μF
Output Current I
OUT
(
m
A)
Output Voltage V
OUT
(V)
Output Current
0203010 40 50 60 70 80 90 100
Time t(μs)
40
20
0
0.76
0.80
0.84
0.92
0.88
0.96
1.00
Output Voltage
V
IN
=1.8V,C
IN
=Tantalum
4.7μF,
C
OUT
=Tantalum
10μF
Output Current I
OUT
(
m
A)
Output Voltage V
OUT
(V)
Output Current
R1172x
18
R1172x101x R1172x101x
0203010 40 50 60 70 80 90 100
Time t(μs)
600
400
200
0
0.8
0.9
1.0
1.2
1.1
1.3
1.4
Output Voltage
VIN=2.0V,CIN=COUT= Ceramic 4.7μF
Output Current I
OUT
(mA)
Output Voltage V
OUT
(V)
Output Current
0203010 40 50 60 70 80 90 100
Time t(μs)
600
400
200
0
0.8
0.9
1.0
1.2
1.1
1.3
1.4
Output Voltage
V
IN
=2.0V,C
IN
=Ceramic
4.7μF,
C
OUT
=Ceramic
10μF
Output Current I
OUT
(mA)
Output Voltage V
OUT
(V)
Output Current
R1172x101x R1172x101x
08124 16202428323640
Time t(μs)
150
100
50
0
0.96
1.00
1.04
1.12
1.08
1.16
1.20
Output Current I
OUT
(mA)
Output Voltage V
OUT
(V)
Output Current
Output Voltage
V
IN
=2.0V,C
IN
=C
OUT
=
Ceramic
4.7μF
0462 8 10 12 14 16 18 20
Time t(μs)
150
100
50
0
0.96
1.00
1.04
1.12
1.08
1.16
1.20
Output Current I
OUT
(
m
A)
Output Voltage V
OUT
(V)
Output Current
Output Voltage
V
IN
=2.0V,C
IN
=Ceramic
4.7μF,
C
OUT
=Ceramic
10μF
R1172x101x R1172x101x
0203010 40 50 60 70 80 90 100
Time t(μs)
40
20
0
0.90
0.95
1.00
1.10
1.05
1.15
1.20
Output Voltage
Output Current I
OUT
(
m
A)
Output Voltage V
OUT
(V)
Output Current
VIN=2.0V,CIN=COUT= Ceramic 4.7μF
0203010 40 50 60 70 80 90 100
Time t(μs)
40
20
0
0.90
0.95
1.00
1.10
1.05
1.15
1.20
Output Voltage
Output Current I
OUT
(
m
A)
Output Voltage V
OUT
(V)
Output Current
V
IN
=2.0V,C
IN
=Ceramic
4.7μF,
C
OUT
=Ceramic
10μF
R1172x
19
R1172x301x R1172x301x
Time t(μs)
600
400
200
0
2.6
2.8
3.0
3.4
3.2
3.6
3.8
Output Voltage
V
IN
=4.0V,C
IN
=C
OUT
=
Ceramic
4.7μF
Output Current I
OUT
(mA)
Output Voltage V
OUT
(V)
Output Current
0 80 12040 160 200 240 280 320 360 400
0 80 12040 160 200 240 280 320 360 400
Time t(μs)
600
400
200
0
2.6
2.8
3.0
3.4
3.2
3.6
3.8
Output Voltage
Output Current I
OUT
(
m
A)
Output Voltage V
OUT
(V)
Output Current
VIN=4.0V,CIN=Ceramic 4.7μF,
COUT=Ceramic 10μF
R1172x301x R1172x301x
08124 16202428323640
Time t(μs)
150
100
50
0
2.96
3.00
3.04
3.12
3.08
3.16
3.20
Output Current I
OUT
(mA)
Output Voltage V
OUT
(V)
Output Current
Output Voltage
VIN=4.0V,CIN=COUT= Ceramic 4.7μF
0462 8 10 12 14 16 18 20
Time t(μs)
150
100
50
0
2.96
3.00
3.04
3.12
3.08
3.16
3.20
Output Current I
OUT
(mA)
Output Voltage V
OUT
(V)
Output Current
Output Voltage
V
IN
=4.0V,C
IN
=Ceramic
4.7μF,
C
OUT
=Ceramic
10μF
R1172x301x R1172x301x
0 80 12040 160 200 240 280 320 360 400
Time t(μs)
40
20
0
2.90
2.95
3.00
3.10
3.05
3.15
3.20
Output Voltage
VIN=4.0V,CIN=COUT= Ceramic 4.7μF
Output Current I
OUT
(mA)
Output Voltage V
OUT
(V)
Output Current
0 80 12040 160 200 240 280 320 360 400
Time t(μs)
40
20
0
2.90
2.95
3.00
3.10
3.05
3.15
3.20
Output Voltage
Output Current I
OUT
(mA)
Output Voltage V
OUT
(V)
Output Current
V
IN
=4.0V,C
IN
=Ceramic
4.7μF,
C
OUT
=Ceramic
10μF
R1172x
20
R1172x501x R1172x501x
Time t(μs)
600
400
200
0
4.50
4.75
5.00
5.50
5.25
5.75
6.00
Output Voltage
Output Current I
OUT
(mA)
Output Voltage V
OUT
(V)
Output Current
VIN=6.0V,CIN=COUT= Ceramic 4.7μF
0 80 12040 160 200 240 280 320 360 400
0462 8 10 12 14 16 18 20
Time t(μs)
150
100
50
0
4.96
5.00
5.04
5.12
5.08
5.16
5.20
Output Current I
OUT
(mA)
Output Voltage V
OUT
(V)
Output Current
Output Voltage
VIN=6.0V,CIN=COUT= Ceramic 4.7μF
R1172x501x
0 80 12040 160 200 240 280 320 360 400
Time t(μs)
40
20
0
4.90
4.95
5.00
5.10
5.05
5.15
5.20
Output Voltage
VIN=6.0V,CIN=COUT= Ceramic 4.7μF
Output Current I
OUT
(mA)
Output Voltage V
OUT
(V)
Output Current
13) Turn-on speed with CE pin control
R1172x081x R1172x501x
I
OUT
=0mA
I
OUT
=100mA
I
OUT
=300mA
V
CE
-20 0 20 40 60 80 100 120 140 160 180
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.0
0.4
0.8
1.2
1.6
2.0
Time t(μs)
V
IN
=1.8V,C
IN
=C
OUT
=
Tantalum
4.7μF
CE Input Voltage V
CE
(V)
Output Voltage V
OUT
(V)
I
OUT
=0mA
I
OUT
=100mA
I
OUT
=300mA
V
IN
(V)
-40 60 160 260 360
0
2
4
6
8
10
0
2
4
6
8
Time t(μs)
V
IN
=6.0V,C
IN
=C
OUT
=
Ceramic
4.7μF
CE Input Voltage V
CE
(V)
Output Voltage V
OUT
(V)
0
R1172x
21
14) Turn-off speed with CE pin control
R1172x081D R1172x501D
-0.4 0.6 1.6 2.8 3.6
0.0
0.6
0.4
0.2
1.4
1.2
1.0
0.8
1.6
1.8
2.0
Time t(ms)
V
IN
=1.8V,C
IN
=C
OUT
=
Tantalum
4.7μF
CE Input Voltage V
CE
(V)
Output Voltage V
OUT
(V)
0.8
0.4
0.0
1.2
1.6
2.0
I
OUT
=0mA
I
OUT
=100mA
I
OUT
=300mA
V
IN
(V)
0
I
OUT
=0mA
I
OUT
=100mA
I
OUT
=300mA
V
IN
(V)
-0.2 0.2 0.6 1.41.0 1.8
0
14
12
10
8
6
4
2
8
6
4
2
0
Time t(ms)
V
IN
=6.0V,C
IN
=C
OUT
=
Tantalum
4.7μF
CE Input Voltage V
CE
(V)
Output Voltage V
OUT
(V)
0
15) Inrush Current (IOUT=100mA, CIN=none)
R1172x081x R1172x081x
-40 0 40 12080 160
2.4
600
400
200
0
1.6
0.8
0.0
V
IN
=2.0V,C
OUT
=
Tantalum
4.7μF
Time t(μs)
C
E Input Voltage
VCE ,Output Voltage
VOUT(V)
Output Voltage
Inrush Current
CE Input Voltage
Inrush Current IVDD(
m
A)
-40 0 40 12080 160
2.4
1.6
0.8
0.0
Time t(μs)
V
IN
=2.0V,C
OUT
=
Tantalum
10μF
C
E Input Voltage
VCE ,Output Voltage
VOUT(V)
Output Voltage
Inrush Current
CE Input Voltage
Inrush Current IVDD(
m
A)
600
400
200
0
R1172x
22
R1172x301x R1172x301x
-40 0 40 12080 160
5
600
400
200
0
4
3
1
0
2
Time t(μs)
V
IN
=4.0V,C
OUT
=
Ceramic
4.7μF
C
E Input Voltage
V
CE
,Output Voltage V
OUT
(V)
Output Voltage
Inrush Current
CE Input Voltage
Inrush Current I
VDD
(
m
A)
-40 0 40 12080 160
5
4
3
1
0
2
Time t(μs)
V
IN
=4.0V,C
OUT
=
Ceramic
10μF
C
E Input Voltage
V
CE
,Output Voltage
V
OUT
(V)
Output Voltage
Inrush Current
CE Input Voltage
Inrush Current I
VDD
(
m
A)
600
400
200
0
R1172x501x R1172x501x
-40 0 40 12080 160
8
600
400
200
0
6
4
0
2
Time t(μs)
V
IN
=6.0V,C
OUT
=
Ceramic 4.7μF
Inrush Current I
VDD
(
m
A)
C
E Input Voltage
V
CE
,Output Voltage
V
OUT
(V)
Output Voltage
Inrush Current
CE Input Voltage
-40 0 40 12080 160
8
6
4
0
2
Time t(μs)
V
IN
=6.0V,C
OUT
=
Ceramic
10μF
Inrush Current I
VDD
(
m
A)
C
E Input Voltage
V
CE
,Output Voltage
V
OUT
(V)
Output Voltage
Inrush Current
CE Input Voltage
600
400
200
0
R1172x
23
ESR vs. Output Current
When using these ICs, consider the following p oints:
VIN CIN
VOUT
CE
R1172xxx1B COUT Spectrum
A
nalyzer
IOUT
ESR
VIN S.A
GND
0.8V to 3.3V Output type: COUT=4.7μF (Kyocera CM105X5R475M06AB)
5.0V Output type : COUT=4.7μF (Kyocera CT21X5R475K06AB)
As an output capacitor for this IC, Ceramic capacitor is recommendable. However, other low ESR type
capacitor can be used with this IC.
For your reference, noise level is tested, and if the noise level is 40μV or less than 40μV, the ESR values are
plotted as stable area. Upper limit is described in the next five graphs, or ESR vs. Output Current. (Hatched area
is the stable area.)
Measurement conditions
⋅ VIN=VOUT+1V
⋅ Frequency Band: 10Hz to 1MHz
⋅ Temperature : 25°C
R1172x081x R1172x081x
0 200 400 600 800 1000
Load Current I
OUT
(mA)
Topt=85°C
Topt=-40°C
0.01
100
1.0
0.1
10
ESR(Ω)
V
IN
=1.4V to 6.0V,
C
IN
=C
OUT
=Ceramic
4.7μF
0 200 400 600 800 1000
Load Current I
OUT
(mA)
Topt=85°C
Topt=-40°C
0.01
100
1.0
0.1
10
ESR(Ω)
V
IN
=1.4V to 6.0V, C
IN
=Ceramic 4.7μF,
C
OUT
=Ceramic 10μF
R1172x
24
R1172x101x R1172x301x
0 200 400 600 800 1000
Load Current I
OUT
(mA)
Topt=85°C
Topt=-40°C
0.01
100
1.0
0.1
10
ESR(Ω)
V
IN
=1.4V to 6.0V,
C
IN
=C
OUT
=Ceramic
4.7μF
0 200 400 600 800 1000
Load Current IOUT(mA)
Topt=85°C
Topt=-40°C
0.01
100
1.0
0.1
10
ESR(Ω)
V
IN
=3.1V to 6.0V,
C
IN
=C
OUT
=Ceramic
4.7μF
R1172x501x
0 200 400 600 800 1000
Load Current I
OUT
(mA)
Topt=85°C
Topt=-40°C
0.01
100
1.0
0.1
10
ESR(Ω)
V
IN
=5.3V to 6.0V,
C
IN
=C
OUT
=Ceramic
4.7μF
