ES2DAF Surface Mount Ultrafast Rectifier Features * * * * * * * Fast Switching Speed - Maximum Trr 35 ns Ultra Thin Profile - Maximum Height of 1.0 mm Glass Passivated Junction UL Flammability 94V-0 Classification MSL 1 Green Mold Compound These Devices are Pb-Free, Halogen Free Free and are RoHS Compliant www.onsemi.com 1 Cathode 2 Anode Ultrafast Rectifier Specifications DO-214AD (SMAF) CASE 403AD ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Value Unit VRRM Recurrent Peak Reverse Voltage 200 V VRMS RMS Reverse Voltage 140 V DC Blocking Voltage 200 V VR Parameter IF(AV) Average Forward Current 2 A IFSM Peak Forward Surge Current: 8.3 ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) 50 A TJ Operating Junction Temperature Range -55 to +150 C Storage Temperature Range -55 to +150 C TSTG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM $Y&Z&3 ES2DAF Band Indicates Cathode $Y &Z &3 ES2DAF = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2015 May, 2018 - Rev. 2 1 Publication Order Number: ES2DAF/D ES2DAF THERMAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Value Unit YJL Typical Thermal Characteristics, Junction-to-Lead (Note 1) Characteristic 25 C/W RqJA Typical Thermal Resistance, Junction-to-Ambient (Note 2) 150 C/W cm2 copper 1. Mounted on an FR4 PCB, single-sided copper, with 100 2. Mounted on an FR4 PCB, single-sided copper, mini pad. pad area. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Parameter Symbol Conditions Min Typ Max Unit VF Forward Voltage IF = 2.0 A - - 0.95 V IR Reverse Current VR = 200 V - - 1 mA trr Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A - - 35 ns CJ Junction Capacitance VR = 4 V, f = 1 MHz - 30 - pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Mark Package Shipping ES2DAF ES2DAF DO-214AD (SMAF) (Pb-Free/Halogen Free) 10000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 ES2DAF TYPICAL PERFORMANCE CHARACTERISTICS CJ, Junction Capacitance (pF) IF, Forward Current (A) 2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 1 1 100 10 TC, Case Temperature (5C) VR, Reverse Bias Voltage (V) Figure 1. Forward Current Derating Curve Figure 2. Typical Junction Capacitance 10 1 TJ = 150C IF, Forward Current (A) IR, Reverse Current (mA) 10 150 10 TJ = 125C 0.1 TJ = 75C 0.01 0.001 100 TJ = 25C TJ = 150C 1 TJ = 125C TJ = 75C 0.1 TJ = 25C 0.01 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) 0.2 0.4 0.6 0.8 VF, Forward Voltage (V) Figure 3. Typical Reverse Characteristics Figure 4. Typical Forward Characteristics www.onsemi.com 3 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMA-FL CASE 403AD ISSUE O DATE 31 AUG 2016 2.04 1.90 1.60 2.04 2.70 2.30 1.89 4.00 3.60 1.24 0.25 0.10 1.10 0.90 LAND PATTERN RECOMMENDATION 5.00 4.40 0.38 1.60 0.95 0.50 NOTES: A. THIS PACKAGE DOES NOT CONFORM TO ANY STANDARDS. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. 0.95 0.50 1.60 DOCUMENT NUMBER: STATUS: 98AON13439G ON SEMICONDUCTOR STANDARD NEW STANDARD: (c) Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 - Rev. 0 SMA-FL http://onsemi.com 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT NUMBER: 98AON13439G PAGE 2 OF 2 ISSUE O REVISION RELEASED FOR PRODUCTION FROM FAIRCHILD DO214AD TO ON SEMICONDUCTOR. REQ. BY B. NG. 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