Mitsubishi Ultra High Voltage
Thyristors are used in high voltage
AC Switch and Static Var
Compensator (SVC) applications.
Mitsubishi High Power, High
Frequency Press Pack Type
Rectifier Diodes are used in high
power inverters, fly-wheel diodes
in DC choppers and in power
supplies as high frequency
rectifiers.
FT1500AU-240
(1500 Amperes / 12000 Volts)
FD2000DU-120
(2000 Amperes / 6000 Volts)
Mitsubishi
Ultra High Voltage Thyristors / Diodes
1
Ultra High Voltage
Thyristor
1500 Amperes / 12000 Volts
Mitsubishi Thyristor
FT1500AU-240
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.13 Dia. 105.0 Dia.
B 4.13 Dia. 105.0 Dia.
C 6.5 Dia. 165.0 Dia.
D 0.2 0.40
E 1.38±0.02 35.0±0.5
F 17.99±0.39 457.0±10
G 0.30 7.5
H 0.17 Dia. 4.3 Dia.
J 0.14 Dia. 3.6±0.1 Dia.
K 0.09 Deep 2.2±0.1 Deep
Description:
Powerex Ultra High Voltage
Thyristors are used in high
voltage AC Switch and Static Var
Compensator (SVC) applications.
Features:
□Average On-state Current
(IT(AV) = 1500A)
□Repetitive Peak Off-state
Voltage (VDRM = 12000V)
□Low On-state Voltage
□Press Pack Type
Applications:
□High Voltage AC Switch
□Static Var Compensator (SVC)
Ordering Information:
Example: Select the complete par t
module number you desire from
the table below.
Current Voltage
Rating Manu. Rating
Device Amperes Number Type (x 50)
FT* 1500 A U** 240
* Press Pack Thyristor
**Ultra High Voltage
D
D
B
A
TYPE
NAME
F
E
C
GATE (WHITE)
AUX CATHODE POTENTIAL
CONNECTOR (RED)
CATHODE
ANODE
G TYP
H TYP
J x K (BOTH SIDES)
2
FT1500AU-240
Ultra High Voltage Thyristor
1500 Amperes / 12000 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Mitsubishi Thyristor
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol FT1500AU-240 Units
Repetitive Peak Reverse Voltage VRRM 12000 Volts
Non-Repetitive Peak Reverse Voltage VRSM 12000 Volts
DC Reverse Voltage VR(DC) 9600 Volts
Repetitive Peak Off-state Voltage VDRM 12000 Volts
Non-Repetitive Peak Off-state Voltage VDSM 12000 Volts
RMS On-state Current IT(RMS) 2360 Amperes
Average On-state Current, f = 60Hz, Sine Wave
u
= 180°C, Tf = 88°CI
T(AV) 1500 Amperes
Surge (Non-repetitive) On-state Current, One Half Cycle at 60Hz ITSM 34 kA
Current-squared, Time Integration, One Cycle at 60Hz I2t 4.8 x 106A2s
Critical Rate of Rise of On-state Current, VD = 1/2 VDRM, IG = 2.0A, Tj = 125°Cdi
T/dt 100 A/µs
Peak Forward Gate Power Dissipation PFGM 30 Watts
Average Forward Gate Power Dissipation PFG(AV) 8.0 Watts
Peak Forward Gate Voltage VFGM 20 Volts
Peak Reverse Gate Voltage VRGM 10 Volts
Peak Forward Gate Current IFGM 6.0 Amperes
Junction Temperature Tj-40 to 125 °C
Storage Temperature Tstg -40 to 150 °C
Mounting Force Required, Recommended Value 118 – 108 ~ 132 kN
Weight, Standard Value – 4000 Grams
DC Off-state Voltage VD(DC) 9600 Volts
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Repetitive Peak Reverse Current IRRM Tj = 125°C, VRRM Applied – – 1200 mA
Repetitive Peak Off-state Current IDRM Tj = 125°C, VDRM Applied – – 1200 mA
On-state Voltage VTM Tj = 125°C, ITM = 3000A, – – 4.0 Volts
Instantaneous Measurement
Critical Rate of Rise of Off-state Voltage dv/dt Tj = 125°C, VD = 1/2 VDRM 2000 – – V/µs
Gate Trigger V oltage VGT Tj = 25°C, VD = 6V, RL = 2Ω– – 2.5 Volts
Gate Non-trigger Voltage VGD Tj = 125°C, VD = 1/2 VDRM 0.2 – – Volts
Gate Trigger Current IGT Tj = 25°C, VD = 6V, RL = 2Ω– – 350 mA
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Fin Rth(j-f) – – – 0.005 °C/W
3
FT1500AU-240
Ultra High Voltage Thyristor
1500 Amperes / 12000 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Mitsubishi Thyristor
0
2000
4000
6000
10000
8000
MAXIMUM ON-STATE
POWER DISSIPATION
(SINGLE-PHASE HALF WAVEFORM)
AVERAGE ON-STATE CURRENT, I
T(avg)
, (AMPERES)
MAXIMUM POWER DISSIPATION, (WATTS)
0 300 600 900 1200 1500
INSTANTANEOUS ON-STATE VOLTAGE, V
TM
, (VOLTS)
MAXIMUM ON-STATE
CHARACTERISTICS
10
2
10
3
10
4
10
5
INSTANTANEOUS ON-STATE CURRENT, I
T
, (AMPERES)
132456789
0
0.001
0.004
0.005
0.006
MAXIMUM THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION-TO-FIN)
TIME, (S)
MAXIMUM THERMAL IMPEDANCE, Z
th(j-c)
, (°C/WATT)
10
-3
10
-2
10
0
10
1
10
-1
10
0
0.002
0.003
10
-1
10
2
10
1
10
0
GATE CHARACTERISTICS
GATE VOLTAGE, V
G
, (VOLTS)
10
2
10
1
10
3
10
4
GATE CURRENT, I
G
, (mA)
V
GT
= 2.5V
V
GD
= 0.2V
V
FGM
= 20V
I
FGM
= 6.0A
T
j
= -40°C
T
j
= 25°C
T
j
= 125°C
I
GT
P
FGM
=
30W
P
FG(avg)
= 8W
0
10
20
30
40
50
RATED SURGE ON-STATE CURRENT
CONDUCTION TIME, (CYCLES AT 60 Hz)
SURGE ON-STATE CURRENT, I
TSM
, (kA)
10
0
10
1
10
2
0
25
50
75
100
125
150
175
ALLOWABLE FIN TEMPERATURE
VS. AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
AVERAGE ON-STATE CURRENT, I
T(avg)
, (AMPERES)
FIN TEMPERATURE, (°C)
0 500 1000 1500 25002000 0
100
200
300
GATE TRIGGER CURRENT
VS. JUNCTION TEMPERATURE
(TYPICAL)
JUNCTION TEMPERATURE, T
j
, (°C)
GATE TRIGGER CURRENT, (mA)
-40 -20 6020 100 180140
T
j
= 125
o
C
u = 30°60°90°120°180°
u
360°
RESISTIVE,
INDUCTIVE LOADS
0
25
50
75
100
125
ALLOWABLE FIN TEMPERATURE
VS. AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVEFORM)
AVERAGE ON-STATE CURRENT, I
T(avg)
, (AMPERES)
FIN TEMPERATURE, (°C)
0 300 600 900 15001200
u
360°
RESISTIVE,
INDUCTIVE
LOADS
u = 30°60°90°120°180°
0
2000
4000
6000
10000
8000
MAXIMUM ON-STATE
POWER DISSIPATION
(RECTANGULAR WAVE)
AVERAGE ON-STATE CURRENT, I
T(avg)
, (AMPERES)
MAXIMUM POWER DISSIPATION, (WATTS)
0
u = 30°60°90°
120°180°
270°
500 1000 1500 2000 2500
DC
u = 30°60°
90°
120°
180°270°DC
RESISTIVE,
INDUCTIVE LOADS
u360°
u
360°
RESISTIVE,
INDUCTIVE LOADS
V
D
= 6V
R
L
= 2Ω
DC METHOD
4
FT1500AU-240
Ultra High Voltage Thyristor
1500 Amperes / 12000 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Mitsubishi Thyristor
REVERSE RECOVERED CHARGE, (µC)
RATE-OF-DECREASE OF ON-STATE CURRENT, (A/µs)
10
-1
10
0
10
2
10
5
10
4
10
3
10
2
10
1
0
1000
2000
3000
TURN-OFF TIME VS.
RATE-OF-RISE OF OFF-STATE VOLTAGE
(TYPICAL)
RATE-OF-RISE OF OFF-STATE VOLTAGE, (V/µs)
TURN-OFF TIME, (µs)
10
0
10
1
10
2
0
1.0
2.0
3.0
GATE TRIGGER VOLTAGE
VS. JUNCTION TEMPERATURE
(TYPICAL)
JUNCTION TEMPERATURE, T
j
, (°C)
GATE TRIGGER VOLTAGE, (VOLTS)
-60 -20 6020 100 140
V
D
= 6V
R
L
= 2Ω
DC METHOD
0
1000
500
1500
2000
2500
3000
HOLDING CURRENT, LATCHING CURRENT
VS. JUNCTION TEMPERATURE
(TYPICAL)
JUNCTION TEMPERATURE, T
j
, (°C)
HOLDING CURRENT, LATCHING CURRENT, (mA)
-60 -20 6020 100 140
I
H
CONDITION:
V
D
= 6V
VARIABLE RESISTANCE
I
L
CONDITION:
I
G
I
L
t
tgw
i
G
,
i
A
I
G
= 1050mA
tgw = 200µs
V
D
= 12V
5
10
15
20
TURN-ON TIME
VS. GATE CURRENT (TYPICAL)
GATE CURRENT, I
G
, (mA)
TURN-ON TIME, (µs)
02 64810
I
GM
I
GM
0.1 V
D
0.1 V
D
t
0tgt
V
AK
,
i
G
di
G
/d
t
= 1.5A/µs
V
D
= 6000V
I
TM
= 3000A
di
T
/d
t
= 100A/µs
T
j
= 125°C
0
1000
2000
3000
TURN-OFF TIME
VS. JUNCTION TEMPERATURE
(TYPICAL)
REVERSE RECOVERED CHARGE
VS. RATE-OF-DECREASE OF
ON-STATE CURRENT (TYPICAL)
JUNCTION TEMPERATURE, T
j
, (°C)
TURN-OFF TIME, (µs)
0 50 100 150
I
TM
= 2800A
d
i
/d
t
= -10A/µs
V
R
= 100V
V
D
= 6000V
d
v
/d
t
= 3V/µs
I
TM
= 2800A
d
i
/d
t
= -10A/µs
V
R
= 100V
V
D
= 6000V
Tj = 80°C
d
i
/d
t
d
v
/d
t
V
D
I
TM
V
R
t
0
–
+
tq
V
AK
,
i
A
0
2000
6000
4000
10000
8000
REVERSE RECOVERED CHARGE
VS. JUNCTION TEMPERATURE
(TYPICAL)
JUNCTION TEMPERATURE, T
j
, (°C)
REVERSE RECOVERED CHARGE, (µC)
0 50 100 150
I
TM
= 3000A
d
i
/d
t
= -10A/µs
V
RM
= 150V
d
i
/d
t
d
v
/d
t
V
D
I
TM
V
R
t
0
–
+
tq
V
AK
,
i
A
t
rr
x I
rm
Q
RR
= 2
d
i
/d
t
I
TM
I
rm
t
rr
V
RM
t
0
–
+
V
AK
,
i
A
I
TM
= 3000A
V
RM
= 150V
t
rr
x I
rm
Q
RR
=
T
j
= 125°C
2
d
i
/d
t
I
TM
I
rm
t
rr
V
RM
t
0
–
+
V
AK
,
i
A
0
Aug.1998
●IF(AV) Average forward current.....................1700A
●VRRM Repetitive peak reverse voltage..........6000V
●QRR Reverse recovery charge ................. 1500µC
●Press pack type
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES
FD2000DU-120
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
FD2000DU-120 OUTLINE DRAWING Dimension in mm
APPLICATION
High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency
rectifiers
IRRM
VFM
Rth(j-f)
Repetitive peak reverse current
Forward voltage
Thermal resistance
mA
V
°C/W
—
—
—
—
—
—
300
5.0
0.009
ELECTRICAL CHARACTERISTICS
Tj = 125°C, VRRM Applied
Tj = 125°C, IFM = 6300A, Instantaneous measurememt
IFM = 2000A, diF/dt = –30A/µs, VR = 150V,
Tj = 125°C
Junction to fin
QRR Reverse recovery charge — — 1500 µC
RMS forward current
Average forward current
Surge forward current
Current-squared, time integration
Junction temperature
Storage temperature
Mounting force required
Weight
A
A
kA
A2s
°C
°C
kN
g
IF(RMS)
IF(AV)
IFSM
I2t
Tj
Tstg—
—
VRRM
VRSM
VR(DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
V
V
V
f = 60Hz, sine wave θ = 180°, Tf = 65°C
One half cycle at 60Hz, non-repetitive
One cycle at 60Hz
Recommended value 108
Standard value
2670
1700
40
6.7 × 106
–40 ~ +125
–40 ~ +150
98 ~ 118
4600
MAXIMUM RATINGS
Voltage class
120
6000
6000
4800
Symbol Parameter Unit
Symbol Parameter Conditions UnitRatings
Symbol Parameter Test conditions Limits
Min Typ Unit
Max
φ 130 ± 0.2
φ 190 max
35 ± 0.5
0.4 min0.4 min
CATHODE
ANODE
TYPE
NAME φ 130 ± 0.2
φ 190 max
φ 3.6 ± 0.2 DEPTH
2.2 ± 0.2
φ 3.6 ± 0.2 DEPTH
2.2 ± 0.2
Aug.1998
10
2
10
3
2
3
5
7
10
4
2
3
5
4
4
7
0 2.0 4.0 6.0 8.0 10.0
T
j
= 125°C
T
j
= 25°C
0
20
40
60
80
100
120
140
160
0 500 1000 1500 2000 2500 3000
0
5
10
15
20
25
30
35
40
45
50
10
0
10
1
23 57 10
2
23 57
0
0.002
0.008
0.006
10
–3
210
–2
357 2 10
–1
357 2 10
0
357
10
0
210
1
357
0.01
0.004
10
1
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
2
3
0 20 40 60 80 100 120 140
0
2000
1000
4000
6000
8000
10000
3000
5000
7000
9000
0
500 1000 1500 2000 2500 3000
Q
RR
t
trr
trrIrm
Q
RR
= 2
Irm
I
FM
V
AK •
i
A
V
RM
d
iF
/d
t
0
+
–
I
FM
= 2000A
d
iF
/d
t
= –30A/µs
V
RM
= 150V
trr
0
DC CIRCUIT
RESISTIVE, INDUCTIVE LOAD
SINGLE-PHASE
HALF WAVE, FULL WAVE
RECTIFICATION CIRCUIT
THREE-PHASE
HALF WAVE,
FULL WAVE
RECTIFICATION
CIRCUIT
DC CIRCUIT
RESISTIVE, INDUCTIVE LOAD
SINGLE-PHASE
HALF WAVE, FULL WAVE
RECTIFICATION CIRCUIT
THREE-PHASE
HALF WAVE,
FULL WAVE
RECTIFICATION
CIRCUIT
FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
MAXIMUM FORWARD CHARACTERISTICS
POWER DISSIPATION (W)
AVERAGE FORWARD CURRENT (A)
MAXIMUM POWER DISSIPATION
CHARACTERISTICS
FIN TEMPERATURE (°C)
AVERAGE FORWARD CURRENT (A)
ALLOWABLE FIN TEMPERATURE
VS. AVERAGE FORWARD CURRENT
THERMAL IMPEDANCE (°C/W)
TIME (S)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
REVERSE RECOVERY CHARGE (µC),
REVERSE RECOVERY TIME (µS)
JUNCTION TEMPERATURE (°C)
REVERSE RECOVERY CHARGE,
REVERSE RECOVERY TIME VS.
JUNCTION TEMPERATURE (TYPICAL)
SURGE FORWARD CURRENT (kA)
CONDUCTION TIME
(CYCLES AT 60Hz)
RATED SURGE FORWARD CURRENT
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES
FD2000DU-120
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
PERFORMANCE CURVES
Aug.1998
101
3
5
7
102
2
3
5
7
103
2
3
2
3
5
7
101210
2
357 2 10
3
357 2 10
4
357
t
trr
trrIrm
QRR = 2
Irm
IFM
VAK • iA
VRM
diF/dt
0
+
–diF/dt = –30A/µs
VRM = 150V
Tj = 125°C
QRR
trr
100210
1
357 2 10
2
357 2 10
3
357
101
102
2
3
5
7
103
2
3
5
7
2
3
5
7
7
t
trr
trrIrm
QRR = 2
Irm
IFM
VAK • iA
VRM
diF/dt
0
+
–
IFM = 2000A
VRM = 150V
Tj = 125°C
trr
QRR
REVERSE RECOVERY CHARGE (µC),
REVERSE RECOVERY TIME (µS)
FORWARD CURRENT (A)
REVERSE RECOVERY CHARGE,
REVERSE RECOVERY TIME VS.
FORWARD CURRENT (TYPICAL)
REVERSE RECOVERY CHARGE (µC),
REVERSE RECOVERY TIME (µS)
RATE OF DECREASE OF REVERSE CURRENT (A/µS)
REVERSE RECOVERY CHARGE,
REVERSE RECOVERY TIME VS. RATE
OF DECREASE OF REVERSE CURRENT (TYPICAL)
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES
FD2000DU-120
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE