(Al mackano Schottky Barrier Diodes for General Purpose Applications Technical Data Features * Low Turn-On Voltage As Low as 0.34 V at 1 mA * Pico Second Switching Speed High Breakdown Voltage Up to 70 V Matched Characteristics Available Description/ Applications The 1N5711, 1N5712, 5082- 2800/10/11 are passivated Schottky barrier diodes which use a patented guard ring" design to achieve a high break- down voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping. The 5082-2835 is a passivated Schottky diode in a low cost glass package. It is optimized for low turn-on voltage. The 5082-2835 is particularly well suited for the UHF mixing needs of the CATV marketplace. The 5082-2300 and 2900 Series devices are unpassivated Schottky diodes in a glass 1N5711, JANIN5711/TX/TXV 1N5712, JANIN5712/TX/TXV 5082-2300 Series 5082-2800 Series 5082-2900 Series package. These diodes have 0.41 (.018) extremely low 1/f noise and are 0.36 (074) ideal for low noise mixing, and ~~ high sensitivity detecting. They are particularly well suited for use in Doppler or narrow band 25.4 (1.00) video receivers. MIN. Note: The JAN Series 1N5711 and 3 te ] i the JAN Series 1N5712 devices are well suited for applications that require the high reliability of a JAN/TX/TXV device. The TX and | TXV devices have solder dipped ps (37) leads. Both the JAN Series 1N5711 CATHODE and 1N5712 undergo testing per MIL-STD-750. More information about these devices can be obtained through your local Hewlett-Packard field sales engineer. 25.4 (1.00) MIN. DIMENSIONS IN MILLIMETERS AND (INCHES). Outline 15 Maximum Ratings Junction Operating and Storage Temperature Range 5082-2301, -2302, -2303, -2900......... ...-60C to +100C 1N5711, 1N5712, 5082-2800/10/11 .. --. 65C to +200C 5082-2835... cnscccsesscccessssecsssnecsssscatsvesssreesreessseceseree -60C to +150C DC Power Dissipation (Measured in an infinite heat sink at Teas = 25C) Derate linearly to zero at maximum rated temperature 5082-2301, -2302, -2303, -2900 ooo... cece cesccssssssecescsssseeseene 100 mW 1N5711, 1N5712, 5082-2800/10/11.. 250 mW 5082-2835 oo... eee cscs ceeeeectenarenees .. 150 mW Peak Inverse Voltage............ssscssssecesscessrencenesesseceeveesepessensatsse essen Vor 3-64Package Characteristics Outline 15 Lead Material ...............cssssssssesseseseernseconcssscascessssasvecsnssnesasneeses Dumet Lead Finish ...........ccccscssccessssesssrscsssasseeseceesereeecstceresesnees 95-5% Tin-Lead Max. Soldering Temperature ................ssseccsscnrsssessens 260C for 5 sec Min. Lead Strength .............cscesccscstssrssscssessenessssseenseetaass 4 pounds pull Typical Package Inductance UNB711, IN57122........cccssccscceessscectcnsssceneetesrsencesecestecnezereetucone 2.0 nH 2BOO Series: ........scccccsccsssessseecesscsacessccsnsssecenseccescessersecaceceseaneeas 2.0 nH 2300, 2900 Series: ..........sccsscecscscccsssesssssseesssenscovecesseessensorsseonss 3.0 nH Typical Package Capacitance UN5711, IN5712: .......csccsscsscscessseesssssscessecsssssessencercesscsacsvsscess 0.2 pF 2800 Series: sateesnenceasseesenseecesones . 0.2 pF 2300, 2900 Series: ............csccccsssssessssssesescescseesaseccescsaveseeseeesenes 0.07 pF The leads on the Outline 15 package should be restricted so that the bend starts at least 1/16 inch from the glass body. Outline 15 diodes are available on tape and reel. The tape and reel specification is patterned after RS-296-D. Electrical Specifications at T, = 25C General Purpose Diodes Min. Max. Vp = 1 V Max. Max. Max. Breakdown | Forward | at Forward | Reverse Leakage| Capaci- Part Package Voltage Voltage Current Current tance Number | Outline Vor (V) Ve (mV) Ty (mA) Ty (nA) at Ve (V) | Cy, (pF) 5082-2800 15 70 410 15 200 50 2.0 1N5711 15 70 410 15 200 50 2.0 5082-2810 15 20 410 35 100 15 1.2 1N5712 15 20 550 35 150 16 1,2 5082-2811 15 15 410 20 100 8 1.2 5082-2835 15 8* 340 10** 100 1 1.0 Test Ip = 10 pA Ip=1mA *V, = 0.45 V Ve =0V Conditions *Ip = 100 pA f=1.0 MHz Note: Effective Carrier Lifetime (1) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA except for 5082-2835 which is measured at 20 mA. 3-65Low I/f (Flicker) Noise Diodes Min. Max. Ve =1V Max. Max. Max. Part Breakdown| Forward | at Forward | Reverse Leakage| Capaci- Number | Package Voltage Voltage Current Current tance 5082- Outline Var (V) Vp (mV) Tp (mA) Ty (MA) at Vg (V)| =Cy (pF) 2301 15 30 400 50 300 15 1.0 2302 15 30 400 35 300 15 1.0 2303 15 20 400 35 500 15 1.0 2900 15 10 400 20 100 5 1.2 Test Tpz=10pA | Ip=1mA Vp=0V Conditions f=1.0 MHz Note: Effective Carrier Lifetime (+) for all these diodes is 100 ps maximum measured with Krakauer method at 20 mA. Matched Pairs and Quads Basic Matched Matched Matched Matched Part Pair Quad Ring Quad Bridge Quad Number Un- Un- Encapsulated Encapsulated Batch 5082- connected connected G-1 Outline G-2 Outline Matchedl!) | Test Conditions 2301 5082-2306 AV, at Ip = 0.75, 20 mA AV; = 20 mV 4Co at f = 1.0 MHz ACo = 0.2 pF 2303 5082-2308 5082-2370 5082-2396 5082-2356 AV, at Ip = 0.75, 20 mA AV, = 20 mV | AVe=20mV AV, = 20 mV AVy = 20 mV AC, at f= 1.0 MHz ACo = 0.2 pF | ACy = 0.2 pF ACo = 0.2 pF ACo = 0.2 pF 2900 5082-2912 5082-2970 5082-2997 AV, at Ip = 1.0, 10 mA AV, = 30 mV SV, = 30 mV AV, = 30 mV 2800 5082-2804 5082-2805 6082-2836* | AVp at Ip = 0.5, 5 mA AV, =20mV | AVy=20mV AV, =20mV | *Ip=10mA ACg =0.1 pF | ACp at f= 1.0 MHz 2811 5082-2815 5082-2814 6082-2813 5082-2826 AVy at Ip = 10 mA AV, = 20 mV AV, = 20 mV AVy = 20 mV AVy = 10 mV | ACp at f = 1.0 MHz ACg = 0.2 pF ACo = 0.2 pF ACo = 0.2 pF ACy = 0.1 pF 2835 5082-2080 AV, at Ip =10 mA AV, =10 mV | ACg at f= 1.0 MHz ACp = 0.1 pF Note: 1. Batch matched devices have a minimum batch size of 50 devices. 3-66Outline G-1 f 3 a : 4 5.08 (.20) ree MAX. 1 5.08 1.20) 813432) la ME MAX. LEAD LENGTH 19.05 (0.75) MIN. 3 Outline G-2 3 2 f | HP82 4 5.08 1:20) 1 NNNN | 5.08 (.20) MAX. 8.13.32) __ ae MAX. LEAD LENGTH 19.05 (0.75} MIN. 3 LEAD FINISH GOLD ALL DIMENSIONS IN MILLIMETERS (INCHES). Typical Parameters 100 z 10 IS a, L E r ibe PN EEE + /, / -50C we ALLL || 0 0.10 0.20 030 040 050 0.60 Ve FORWARD VOLTAGE (V) Figure 1. I-V Curve Showing Typical Temperature Variation for 5082-2300 and 5082-2900 Series Schottky Diodes. 1000 LZ Ro DYNAMIC RESISTANCE (32) 3 10 ee 01 1 10 tg FORWARD CURRENT {mA} Figure 3. 5082-2300 Series and 5082-2900 Series Typical Dynamic Resistance (R,) vs. Forward Current (1,). 100 1 2 4 10,000 100 Lerner nner eee ennerea] 1000 25 | rer o < aa = 100 el _ Ta PC) 10 eat 1 Q 5 10 15 Ver (V} Figure 2. 5082-2300 Series Typical Reverse Current vs. Reverse Voltage at Various Temperatures. 1.2 1.0 g = 0.8 w g 2 Ee 06 Q & WL 5082-2900 o 0.4 5082-2303 g r~ 02 5082-2301 . 5082-2302 | 0 4 8 12 16 20 Vp REVERSE VOLTAGE (V) Figure 4. 5082-2300 and 5082-2900 Series Typical Capacitance vs. Reverse Voltage. 3-67Typical Parameters (continued) 0S |, FORWARD CURRENT (mA} ~ 01 9 9 2 4 6 8 1.0 1.2 Vp FORWARD VOLTAGE {V) Figure 5. I-V Curve Showing Typical Temperature Variation for 5082-2800 or 1N5711 Schottky Diodes. 2.0 = So Cy CAPACITANCE (pF) mn 9 10 20 x 40 50 V_ REVERSE VOLTAGE (Vv) Figure 7. (5082-2800 or 1N5711) Typical Capacitance (G) vs. Reverse Voltage (V,). 10,000 =~ - =) ee 5 EA Z eo i" o LY] x > E/| 7. re] * we A WA Ef rb A oO 5.0 610 a) 3a V,_ REVERSE VOLTAGE (V} Figure 9. (5082-2810 or 1N5712) Typical Variation of Reverse Current (I,) vs. Reverse Voltage (V,) at Various Temperatures. 100,000 10 _ 125 10,000 5 100 fr 75 = 1000 3 oO w 50 na = 100 a 25 c ' 0 = (Ww reo 0 10 20 % 40 50 60 V_ REVERSE VOLTAGE (Vv) Figure 6. (6082-2800 or 1N5711) Typical Variation of Reverse Current (1,) vs. Reverse Voltage (V,) at Various Temperatures. 100 -60C oc 25C 1 60C 100C 150C {, ~ FORWARD CURRENT (mA) - o a 2 4 6 8 1.0 1.2 Ve FORWARD VOLTAGE (V) Figure 8. I-V Curve Showing Typical Temperature Variation for the 5082-2810 or 1N5712 Schottky Diode. 100 _ ae lp FORWARD CURRENT (mA} 5 " TTT Tre CoM TTT g a on | 2 4 8 a 1.0 1.2 V,_ ~ FORWARD VOLTAGE (V} Figure 10. I-V Curve Showing Typical Temperature Variation for the 5082-2811 Schottky Diode. 3-68Typical Parameters (continued) 100,000 {10,000 150 5 | Ley 100 wi aa x 1000 a s | 50 3 2 100 a L- 2 a a) 1 a re} | 4g | 74 a 7) 5 10 15 20 2 30 Vag ~ REVERSE VOLTAGE (V) Figure 11. (5082-2811) Typical Variation of Reverse Current (1,) vs. Reverse Voltage (V,) at Various Temperatures. 100,000 ' es 4128 C | paper 10,000 Le aT 5 at = 1000 | +TS Se] a) La | 2 ~ eo vy a oG a" ' = 10 1 Q 1 2 3 4 5 6 Vp_ REVERSE VOLTAGE (V) Figure 13. (5082-2835) Typical Variation of Reverse Current (I,) vs. Reverse Voltage (V,) at Various Temperatures. 1000 g wu o a & 100 5082-2800, 1N5711 2 F 5082-2811 t E- 082-2810, 1NS712 @ b 5082-2835 : T FJ pea > 10 a 3 = 1 = ~ I OU~ cs LE Lit 1 pe {ot iii a 1.0 1 I, FORWARD CURRENT (mA) Figure 15. Typical Dynamic Resistance (R,) vs. Forward Current (1,). 100 E q L ~ VE /} 2 [ wa t ira t ii } > tA 1.0; 8 E bore = C [~~ orc 5 = | ~ +26 Se +50C + [~ +100C [~ +150C 01 0 2 4 6 a 10 12 V_e FORWARD VOLTAGE (V) Figure 12. I-V Curve Showing Typical Temperature Variations for 5082-2835 Schottky Diode. Cy CAPACITANCE (pF) 0 2 4 6 a 0 Va REVERSE VOLTAGE (V} Figure 14. Typical Capacitance (C,) ve. Reverse Voltage ,) 3-69