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DATA SH EET
Product data sheet
Supersedes data of 2004 Jun 23 2004 Nov 08
DISCRETE SEMICONDUCTORS
PBSS5520X
20 V, 5 A
PNP low VCEsat (BISS) transistor
db
ook, halfpage
M3D109
2004 Nov 08 2
NXP Semiconductors Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor PBSS5520X
FEATURES
•High hFE and low VCEsat at high current operation
•High collector current IC: 5 A
•High efficiency leading to less heat generation.
APPLICATIONS
•Medium power pe ripher al driver s (e.g. fa ns and mot ors)
•Strobe flash units for digital still cameras and mobile
phones
•Power switch for LAN and ADSL systems
•Medium power DC-to-D C co nversion
•Battery chargers
•Supply line switching.
DESCRIPTION
PNP low VCEsat (BISS) transistor in a SOT89 (SC-62)
plastic pack ag e.
NPN complement: PBSS4520X.
MARKING
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
TYPE NUMBER MARKING CODE(1)
PBSS5520X *1K
PINNING
PIN DESCRIPTION
1emitter
2collector
3base
321
sym07
9
1
2
3
Fig.1 Simplified outline (SOT89 ) and symbo l .
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
VCEO collector-emitter voltage −20 V
ICcollector current (DC) −5 A
ICM peak collector current −10 A
RCEsat equivalent on-resistance 54 mΩ
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
PBSS5520X SC-62 plastic surface mounted package; collector pad for
good heat transfer; 3 leads SOT89
2004 Nov 08 3
NXP Semiconductors Pr oduct data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor PBSS5520X
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
Notes
1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2.
2. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated , standard footprint.
3. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated , mounting pad for collector 1 cm2.
4. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated , mounting pad for collector 6 cm2.
5. Device mounted o n a 7 cm2 ceramic printed-circuit board, 1 cm2 single-side d c opper, tin-plated.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − −20 V
VCEO collector-emitter voltage open base − −20 V
VEBO emitter-base voltage open collector − −5 V
ICcollector current (DC) − −5 A
ICM peak collector current tp ≤ 1 ms − −10 A
ICRP repetitive peak colle ctor current notes 1 and 2 − −6.5 A
IBbase current (DC) − −1 A
IBM peak base current tp ≤ 1 ms − −2 A
Ptot total power dissipation Tamb ≤ 25 °C
notes 1 and 2 −2.5 W
note 2 −0.55 W
note 3 −1 W
note 4 −1.4 W
note 5 −1.6 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb ambient temperature −65 +150 °C
2004 Nov 08 4
NXP Semiconductors Pr oduct data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor PBSS5520X
Tamb (°C)
−50 20015050 1000
001aaa229
800
400
1200
1600
Ptot
(mW)
0
(1)
(2)
(3)
Fig.2 Power derating curves.
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) FR4 PCB; standard footprint .
2004 Nov 08 5
NXP Semiconductors Pr oduct data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor PBSS5520X
THERMAL CHARACTE RISTICS
Notes
1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2.
2. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated , standard footprint.
3. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated , mounting pad for collector 1 cm2.
4. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated , mounting pad for collector 6 cm2.
5. Device mounted o n a 7 cm2 ceramic printed-circuit board, 1 cm2 single-side d c opper, tin-plated.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient in free air
notes 1 and 2 50 K/W
note 2 225 K/W
note 3 125 K/W
note 4 90 K/W
note 5 80 K/W
Rth(j-s) thermal resistance from junction to soldering point 16 K/W
006aaa232
10
1
102
103
Zth
(K/W)
10−1
10−51010−2
10−4102
10−1tp (s)
10−3103
1
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
Fig.3 Transient thermal impeda nc e as a function of pulse time; typical values.
(1) δ = 1.
(2) δ = 0.75. (3) δ = 0.5.
(4) δ = 0.33. (5) δ = 0.2.
(6) δ = 0.1. (7) δ = 0.05.
(8) δ = 0.02. (9) δ = 0.01.
(10) δ = 0.
Mounted on FR4 printed -circuit bo ard; standard footprint.
2004 Nov 08 6
NXP Semiconductors Pr oduct data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor PBSS5520X
006aaa233
10
1
102
103
Zth
(K/W)
10−1
10−51010−2
10−4102
10−1tp (s)
10−3103
1
(5)
(6)
(7)
(8)
(9)
(10)
(1) (2)
(3) (4)
Fig.4 Transient thermal impeda nc e as a function of pulse time; typical values.
(1) δ = 1.
(2) δ = 0.75. (3) δ = 0.5.
(4) δ = 0.33. (5) δ = 0.2.
(6) δ = 0.1. (7) δ = 0.05.
(8) δ = 0.02. (9) δ = 0.01.
(10) δ = 0.
Mounted on F R4 printed-circuit board; mounting pad for collector 1 cm 2.
006aaa234
10
1
102
103
Zth
(K/W)
10−1
10−51010−2
10−4102
10−1tp (s)
10−3103
1
(6)
(7)
(8)
(9)
(10)
(1)
(5) (4)
(3) (2)
Fig.5 Transient thermal impeda nc e as a function of pulse time; typical values.
(1) δ = 1.
(2) δ = 0.75. (3) δ = 0.5.
(4) δ = 0.33. (5) δ = 0.2.
(6) δ = 0.1. (7) δ = 0.05.
(8) δ = 0.02. (9) δ = 0.01.
(10) δ = 0.
Mounted on F R4 printed-circuit board; mounting pad for collector 6 cm 2.
2004 Nov 08 7
NXP Semiconductors Pr oduct data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor PBSS5520X
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB = −20 V; IE = 0 A −−−100 nA
VCB = −20 V; IE = 0 A; Tj = 150 °C−−−50 μA
IEBO emitter-base cu t-off current VEB = −5 V; IC = 0 A −−−100 nA
ICES collector-emitter cut-off current VCE = −20 V; VBE = 0 V −−−100 nA
hFE DC current gain VCE = −2 V
IC = −0.5 A; note 1 300 430 −
IC = −1 A; note 1 275 400 −
IC = −2 A; note 1 250 360 −
IC = −5 A; note 1 150 260 −
VCEsat collector-emitter saturation voltage IC = −0.5 A; IB = −5 mA − −45 −70 mV
IC = −1 A; IB = −10 mA − −70 −110 mV
IC = −2.5 A; IB = −125 mA; note 1 − −100 −150 mV
IC = −4 A; IB = −200 mA; note 1 − −150 −230 mV
IC = −5 A; IB = −500 mA; note 1 − −170 −270 mV
RCEsat equivalent on-resistance IC = −5 A; IB = −500 mA; note 1 −34 54 mΩ
VBEsat base-emitt er saturation voltage IC = −4 A; IB = −200 mA; note 1 − −0.9 −1.05 V
IC = −5 A; IB = −500 mA; note 1 − −0.96 −1.1 V
VBEon base-emitter turn-on voltage VCE = −2 V; IC = −2 A − −0.74 −0.85 V
fTtransition frequen c y IC = −100 mA; VCE = −10 V;
f = 100 MHz 80 100 −MHz
Cccollector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz −130 150 pF
2004 Nov 08 8
NXP Semiconductors Pr oduct data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor PBSS5520X
VCE (V)
0−2.0−1.6−0.8 −1.2−0.4
001aaa772
−0.10
−0.15
−0.05
−0.20
−0.25
IC
(A)
0
(10)
(9)
(8)
(7)
(6)
(5)(4)(3)(2)(1)
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
(1) IB = −64 mA.
(2) IB = −57.6 mA.
(3) IB = −51.2 mA.
(4) IB = −44.8 mA.
(5) IB = −38.4 mA.
(6) IB = −32 mA.
(7) IB = −25.6 mA.
(8) IB = −19.2 mA.
(9) IB = −12.8 mA.
(10) IB = −6.4 mA.
001aaa773
−400
−800
−1200
VBE
(mV)
0
IC (mA)
−10−1−104
−103
−1−102
−10
(1)
(2)
(3)
Fig.7 Base-emitte r voltage as a function of
collector current; typical values.
VCE = −2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
001aaa774
400
600
200
800
1000
hFE
0
IC (mA)
−10−1−104
−103
−1−102
−10
(1)
(2)
(3)
Fig.8 DC current ga in as a function of collector
current; ty pical values.
VCE = −2 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC (mA)
−10−1−104
−103
−1−102
−10
001aaa775
10−1
10−2
10
1
102
RCEsat
(Ω)
(3)
(1)
(2)
Fig.9 Equivalent on-resistance as a function of
collector current; typical values.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
2004 Nov 08 9
NXP Semiconductors Pr oduct data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor PBSS5520X
001aaa776
−102
−10
−103
VCEsat
(mV)
−1
IC (mA)
−10−1−104
−103
−1−102
−10
(3)
(1)
(2)
Fig.10 Collec to r-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
001aaa777
−102
−10
−103
VCEsat
(mV)
−1
IC (mA)
−10−1−104
−103
−1−102
−10
(1)
(2)
(3)
Fig.11 Collec to r-emitter saturation voltage as a
function of collector current; typical values.
Tamb = 25 °C.
(1) IC/IB = 100.
(2) IC/IB = 50.
(3) IC/IB = 10.
001aaa778
−400
−800
−1200
VBEsat
(mV)
0
IC (mA)
−10−1−104
−103
−1−102
−10
(1)
(2)
(3)
Fig.12 Base- emitte r s atur ation v oltag e as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
001aaa779
−400
−800
−1200
VBEon
(mV)
0
IC (mA)
−10−1−104
−103
−1−102
−10
Fig.13 Base-emitter turn-on voltage as a function
of collector current; typical values.
Tamb = 25 °C; VCE = −2 V.
2004 Nov 08 10
NXP Semiconductors Pr oduct data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor PBSS5520X
Reference mounting conditions
001aaa234
2.5 mm
5 m
1.6 mm
0.5 mm
1 mm
3.96 mm
3 mm
2.5 mm
1 mm
40
m
32 mm
Fig.14 FR4, standard footprin t.
handbook, halfpage
MLE322
40 mm
32 mm
2.5 mm
10 mm
5 mm
1.6 mm
0.5 mm
1 mm
3.96 mm
10 mm
Fig.15 FR4, mounting pad for collector 1 cm2.
001aaa235
2.5 mm
5 m
m
1.6 mm
0.5 mm
1 mm
3.96 mm
30 mm
20
mm
40
m
m
32 mm
Fig.16 FR4, mounting pad for collector 6 cm2.
2004 Nov 08 11
NXP Semiconductors Pr oduct data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor PBSS5520X
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
DIMENSIONS (mm are the original dimensions)
SOT89 TO-243 SC-62 04-08-03
06-03-16
wM
e1
e
EHE
B
0 2 4 mm
scale
bp3
bp2
bp1
c
D
Lp
A
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8
9
123
UNIT A
mm 1.6
1.4 0.48
0.35
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
HELp
4.25
3.75
e
3.0
w
0.13
e1
1.5 1.2
0.8
bp2
bp1
0.53
0.40
bp3
1.8
1.4
2004 Nov 08 12
NXP Semiconductors Pr oduct data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor PBSS5520X
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
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NXP Semiconductors
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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/02/pp13 Date of release: 2004 Nov 08 Document orde r number: 9397 750 13892