DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 PBSS4350Z 50 V low VCEsat NPN transistor Product specification Supersedes data of 2001 Jul 13 2003 Jan 20 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350Z FEATURES QUICK REFERENCE DATA * Low collector-emitter saturation voltage SYMBOL * High collector current capability: IC and ICM VCEO collector-emitter voltage 50 V ICM peak collector current 5 A RCEsat equivalent on-resistance <145 m * High collector current gain (hFE) at high IC * Higher efficiency leading to less heat generation PARAMETER MAX. UNIT * Reduced PCB area requirements compared to DPAK. PINNING APPLICATIONS PIN * Power management DESCRIPTION 1 base - DC/DC converters 2 collector - Supply line switching 3 emitter - Battery charger 4 collector - Linear voltage regulation (LDO). * Peripheral drivers - Driver in low supply voltage applications, e.g. lamps, LEDs 4 handbook, halfpage 2, 4 - Inductive load driver, e.g. relays, buzzers, motors. 1 DESCRIPTION NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5350Z. 3 1 Top view 2 3 MAM287 MARKING TYPE NUMBER PBSS4350Z 2003 Jan 20 MARKING CODE Fig.1 Simplified outline (SOT223) and symbol. PB4350 2 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350Z LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 60 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 6 V IC collector current (DC) - 3 A ICM peak collector current - 5 A IBM peak base current - 1 A Ptot total power dissipation Tamb 25 C; notes 1 and 3 - 1.35 W Tamb 25 C; notes 2 and 3 - 2 W Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. 3. For other mounting conditions see "Thermal considerations for SOT223 in the General Part of associated Handbook". THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient in free air; notes 1 and 3 in free air; notes 2 and 3 VALUE UNIT 92 K/W 62.5 K/W Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. 3. For other mounting conditions see "Thermal considerations for SOT223 in the General Part of associated Handbook". 2003 Jan 20 3 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350Z CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. VCB = 50 V; IE = 0 - - 100 nA VCB = 50 V; IE = 0; Tj = 150 C - - 50 A nA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 - - 100 hFE DC current gain VCE = 2 V; IC = 500 mA 200 - - VCE = 2 V; IC = 1 A; note 1 200 - - VCE = 2 V; IC = 2 A; note 1 100 - - VCEsat collector-emitter saturation voltage UNIT IC = 500 mA; IB = 50 mA - - 90 mV IC = 1 A; IB = 50 mA - - 170 mV IC = 2 A; IB = 200 mA; note 1 - - 290 mV RCEsat equivalent on-resistance IC = 2 A; IB = 200 mA; note 1 - 110 <145 m VBEsat base-emitter saturation voltage IC = 2 A; IB = 200 mA; note 1 - - 1.2 V VBEon base-emitter turn-on voltage VCE = 2 V; IC = 1 A; note 1 - - 1.1 V fT transition frequency IC = 100 mA; VCE = 5 V; f = 100 MHz 100 - - MHz Cc collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz - - 30 pF Note 1. Pulse test: tp 300 s; 0.02. 2003 Jan 20 4 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350Z MGW175 600 MGW176 1.2 VBE (V) 1.0 handbook, halfpage handbook, halfpage hFE 500 (1) (1) 0.8 400 (2) (2) 300 0.6 (3) 200 0.4 (3) 0.2 100 0 10 -1 1 10 102 0 10 -1 103 104 I C (mA) 1 VCE = 2 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. VCE = 2 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MGW181 103 handbook, halfpage 10 102 103 104 I C (mA) Base-emitter voltage as a function of collector-current; typical values. MGW178 1.2 VBEsat (V) 1.0 handbook, halfpage VCEsat (mV) (1) 102 0.8 (2) (1) 0.6 (2) (3) (3) 0.4 10 0.2 1 10 -1 1 10 102 0 10 -1 103 104 I C (mA) 1 IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.4 Fig.5 Collector-emitter saturation as a function of collector current; typical values. 2003 Jan 20 5 10 102 103 104 I C (mA) Base-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350Z MGW180 MGW179 1200 5 handbook, halfpage handbook, halfpage I C (mA) 1000 (2) (3) (4) (5) (1) IC (A) (1) (2) 4 (6) (7) (3) (8) (4) 800 (5) 3 (9) (6) 600 (7) (10) 2 (8) 400 (9) (10) 200 1 (11) (12) 0 0 0 0.4 0.8 1.2 2 1.6 VCE (V) VCE = 5 V. (1) (2) (3) (4) (5) IB = 2.64 nA. (6) IB = 2.31 nA. (7) IB = 1.98 nA. (8) IB = 1.65 nA. (9) IB = 1.32 nA. (10) IB = 0.99 nA. (11) IB = 0.66 nA. (12) IB = 0.33 nA. (1) (2) (3) (4) Collector current as a function of collector-emitter voltage; typical values. RCEsat () 102 10 1 (1) 10 -1 (2) (3) 1 10 102 103 104 I C (mA) IC/IB = 20. (1) Tamb = 150 C. Fig.8 (2) Tamb = 25 C. (3) Tamb = -55 C. Collector-emitter equivalent on-resistance as a function of collector current; typical values. 2003 Jan 20 IB = 150 mA. IB = 135 mA. IB = 120 mA. IB = 105 mA. Fig.7 MGW182 103 handbook, halfpage 10 -2 10 -1 0.8 1.2 1.6 2 VCE (V) VCE = 5 V. IB = 3.96 nA. IB = 3.63 nA. IB = 3.30 nA. IB = 2.97 mA. Fig.6 0.4 0 6 (5) IB = 90 mA. (6) IB = 75 mA. (7) IB = 60 mA. (8) IB = 45 mA. (9) IB = 30 mA. (10) IB = 15 mA. Collector current as a function of collector-emitter voltage; typical values. Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350Z PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION SOT223 2003 Jan 20 REFERENCES IEC JEDEC EIAJ SC-73 7 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350Z DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Jan 20 8 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350Z NOTES 2003 Jan 20 9 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350Z NOTES 2003 Jan 20 10 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350Z NOTES 2003 Jan 20 11 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA75 (c) Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp12 Date of release: 2003 Jan 20 Document order number: 9397 750 10637 Philips Semiconductors - PIP - PBSS4350Z; 50 V low VCEsat NPN transistor Submit Query Philips Semiconductors Home ProductBuy MySemiconductors ContactProduct Information catalogonline PBSS4350Z; 50 V low VCEsat NPN transistor Products MultiMarket * Semiconductors * Product Selector Catalog by * Function Catalog by * System * Cross-reference * Packages End of Life * information Distributors Go * Here! * Models * SoC solutions General description Block diagram Products & packages Features Buy online Parametrics Information as of 2003-04-22 My.Semiconductors.COM. Your personal service from Use right mouse button to Philips Semiconductors. download datasheet Please register now ! Download datasheet Stay informed Applications Support & tools Similar products Datasheet Email/translate General description top NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5350Z. Features top Low collector-emitter saturation voltage High collector current capability: IC and ICM High collector current gain (hFE ) at high IC Higher efficiency leading to less heat generation Reduced PCB area requirements compared to DPAK. Applications top Power management DC/DC converters Supply line switching Battery charger Linear voltage regulation (LDO). Peripheral drivers Driver in low supply voltage applications, e.g. lamps, LEDs Inductive load driver, e.g. relays, buzzers, motors. AN10116_2: Breakthrough In Small Signal - Low VCEsat (BISS) Transistors and their Applications (date 05-Aug-02) file:///G|/imaging/BITTING/CPL/20030424/04232003_9/PHGL/_HTML04232003/PBSS4350Z.html (1 of 3) [May-06-2003 6:16:11 PM] Philips Semiconductors - PIP - PBSS4350Z; 50 V low VCEsat NPN transistor Datasheet top Type number Title Publication release Datasheet status date 50 V low VCEsat 1/20/2003 NPN transistor PBSS4350Z Page count Product specification 12 File size (kB) Datasheet 83 Download Download PDF File Parametrics top Type number VCEO Ptot Complement IC VCesat(mV) Package POLARITY IC (AV)(mA) max(mA) max(V) max(mW) SOT223 PBSS4350Z NPN (SC-73) 5000 50 2000 PBSS5350Z 3000 290@IC=2000mA / IB=200mA 170@IC=1000mA / IB=50mA Products, packages, availability and ordering top Type number PBSS4350Z North American type number Ordering code (12NC) PBSS4350Z /T3 Marking/Packing Package Device status Discretes packing Download info PDF File Standard Marking * SOT223 9340 565 26135 Reel Pack, SMD, (SC-73) Large Similar products Buy online Full production order this product online - top PBSS4350Z links to the similar products page containing an overview of products that are similar in Products function similar or related to the type number(s) as listed on this page. The similar products page includes products from the same catalog tree(s), relevant selection guides and products from the same functional category. to PBSS4350Z Support & tools top Breakthrough in Small-Signal; Low VCEsat (BISS) transistors(date 10-Apr-03) Letter Symbols - Transistors General(date 01-May-99) Download PDF File Email/translate this product information top Email this product information. Translate this product information page from English to: French Translate The English language is the official language used at the semiconductors.philips.com website and webpages. All translations on this website are created through the use of Google Language Tools and are provided for convenience purposes only. 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