DATA SH EET
Product specification
Supersedes data of 2001 Jul 13 2003 Jan 20
DISCRETE SEMICONDUCTORS
PBSS4350Z
50 V low VCEsat NPN transistor
d
book, halfpage
M3D087
2003 Jan 20 2
Philips Semiconductors Product specification
50 V low VCEsat NPN transistor PBSS4350Z
FEATURES
•Low collector-emitter saturation voltage
•High collector current capability: IC and ICM
•High collector current gain (hFE) at high IC
•Higher efficiency leading to less heat generation
•Reduced PCB area requirements compared to DPAK.
APPLICATIONS
•Power management
– DC/DC converters
– Supply line switching
– Battery charger
– Linear voltage regulation (LDO).
•Peripheral drivers
– Driver in low supply voltage applications, e.g. lamps,
LEDs
– Inductive load driver, e.g. relays, buzzers, motors.
DESCRIPTION
NPN low VCEsat transistor in a SOT223 plastic package.
PNP complement: PBSS5350Z.
MARKING
TYPE NUMBER MARKING CODE
PBSS4350Z PB4350
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
4 collector
handbook, halfpage
4
123
MAM287
Top view
3
2, 4
1
Fig.1 Simplified outline (SOT223) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
VCEO collector-emitter voltage 50 V
ICM peak collector current 5 A
RCEsat equivalent on-resistance <145 mΩ
2003 Jan 20 3
Philips Semiconductors Product specification
50 V low VCEsat NPN transistor PBSS4350Z
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
3. For other mounting conditions see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”
.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
3. For other mounting conditions see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”
.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −60 V
VCEO collector-emitter voltage open base −50 V
VEBO emitter-base voltage open collector −6V
I
Ccollector current (DC) −3A
I
CM peak collector current −5A
I
BM peak base current −1A
P
tot total power dissipation Tamb ≤25 °C; notes 1 and 3 −1.35 W
Tamb ≤25 °C; notes 2 and 3 −2W
T
stg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient in free air; notes 1 and 3 92 K/W
in free air; notes 2 and 3 62.5 K/W
2003 Jan 20 4
Philips Semiconductors Product specification
50 V low VCEsat NPN transistor PBSS4350Z
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp≤300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB = 50 V; IE=0 −−100 nA
VCB = 50 V; IE= 0; Tj= 150 °C−−50 µA
IEBO emitter-base cut-off current VEB =5V; I
C=0 −−100 nA
hFE DC current gain VCE =2V; I
C= 500 mA 200 −−
V
CE =2V; I
C= 1 A; note 1 200 −−
V
CE =2V; I
C= 2 A; note 1 100 −−
V
CEsat collector-emitter saturation
voltage IC= 500 mA; IB=50mA −−90 mV
IC= 1 A; IB=50mA −−170 mV
IC= 2 A; IB= 200 mA; note 1 −−290 mV
RCEsat equivalent on-resistance IC= 2 A; IB= 200 mA; note 1 −110 <145 mΩ
VBEsat base-emitter saturation voltage IC= 2 A; IB= 200 mA; note 1 −−1.2 V
VBEon base-emitter turn-on voltage VCE =2V; I
C= 1 A; note 1 −−1.1 V
fTtransition frequency IC= 100 mA; VCE = 5 V; f = 100 MHz 100 −−MHz
Cccollector capacitance VCB = 10 V; IE=I
e= 0; f = 1 MHz −−30 pF
2003 Jan 20 5
Philips Semiconductors Product specification
50 V low VCEsat NPN transistor PBSS4350Z
handbook, halfpage
0
hFE
IC (mA)
600
100
200
300
500
400
MGW175
10−111010
2103104
(1)
(2)
(3)
Fig.2 DC current gain as a function of collector
current; typical values.
VCE =2V.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =−55 °C.
handbook, halfpage
0
0.2
IC (mA)
VBE
(V)
1.2
0.4
0.8
0.6
1.0
MGW176
10−111010
2103104
(1)
(2)
(3)
Fig.3 Base-emitter voltage as a function of
collector-current; typical values.
VCE =2V.
(1) Tamb =−55 °C.
(2) Tamb =25C.
(3) Tamb = 150 °C.
handbook, halfpage
IC (mA)
103
102
10
1
MGW181
10−111010
2103104
VCEsat
(mV)
(1)
(2)
(3)
Fig.4 Collector-emitter saturation as a function of
collector current; typical values.
IC/IB= 20.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =−55 °C.
handbook, halfpage
IC (mA)
1.2
0.6
0.4
0.2
0
0.8
1.0
MGW178
10
−1
11010
2
10
3
10
4
VBEsat
(V)
(1)
(2)
(3)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
IC/IB= 20.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =−55 °C.
2003 Jan 20 6
Philips Semiconductors Product specification
50 V low VCEsat NPN transistor PBSS4350Z
handbook, halfpage
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
(12)
2
1200
1000
0
200
400
600
800
0.4 0.8 1.2 1.6
MGW179
VCE (V)
IC
(mA)
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
(1) IB= 3.96 nA.
(2) IB= 3.63 nA.
(3) IB= 3.30 nA.
(4) IB= 2.97 mA.
(5) IB= 2.64 nA.
(6) IB= 2.31 nA.
(7) IB= 1.98 nA.
(8) IB= 1.65 nA.
(9) IB= 1.32 nA.
(10) IB= 0.99 nA.
(11) IB= 0.66 nA.
(12) IB= 0.33 nA.
VCE =5V.
handbook, halfpage
0
(4)
(3)
(2)
(5)
(6)
(7)
(8)
(9)
(10)
2
5
0
1
2
3
4
0.4 0.8 1.2 1.6
MGW180
VCE (V)
IC
(A)
(1)
Fig.7 Collector current as a function of
collector-emitter voltage; typical values.
VCE =5V.
(1) IB= 150 mA.
(2) IB= 135 mA.
(3) IB= 120 mA.
(4) IB= 105 mA.
(5) IB=90mA.
(6) IB=75mA.
(7) IB=60mA.
(8) IB=45mA.
(9) IB=30mA.
(10) IB=15mA.
handbook, halfpage
IC (mA)
103
102
10−1
10−2
10
1
MGW182
10−111010
2103104
RCEsat
(Ω)
(1) (2)
(3)
Fig.8 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
IC/IB= 20.
(1) Tamb = 150 °C. (2) Tamb =25°C. (3) Tamb =−55 °C.
2003 Jan 20 7
Philips Semiconductors Product specification
50 V low VCEsat NPN transistor PBSS4350Z
PACKAGE OUTLINE
UNIT A1bpcDEe
1H
EL
pQywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.10
0.01
1.8
1.5 0.80
0.60
b1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73 97-02-28
99-09-13
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223
2003 Jan 20 8
Philips Semiconductors Product specification
50 V low VCEsat NPN transistor PBSS4350Z
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2003 Jan 20 9
Philips Semiconductors Product specification
50 V low VCEsat NPN transistor PBSS4350Z
NOTES
2003 Jan 20 10
Philips Semiconductors Product specification
50 V low VCEsat NPN transistor PBSS4350Z
NOTES
2003 Jan 20 11
Philips Semiconductors Product specification
50 V low VCEsat NPN transistor PBSS4350Z
NOTES
© Koninklijke Philips Electronics N.V. 2003 SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a worldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613514/02/pp12 Date of release: 2003 Jan 20 Document order number: 9397 750 10637
Philips Semiconductors - PIP - PBSS4350Z; 50 V low VCEsat NPN transistor
Philips Semiconductors Home
Product
catalog
Buy
online
MySemiconductors
Contact
Products
•MultiMarket
Semiconductors
•Product Selector
•Catalog by
Function
•Catalog by
System
•Cross-reference
•Packages
•End of Life
information
•Distributors Go
Here!
•Models
•SoC solutions
Product Information
PBSS4350Z; 50 V
low VCEsat NPN
transistor
Information as of 2003-04-22
My.Semiconductors.COM.
Your personal service from
Philips Semiconductors.
Please register now !
Stay informed
Use right mouse button to
download datasheet
Download datasheet
General description Features Applications Datasheet
Block diagram Buy online Support & tools Email/translate
Products & packages Parametrics Similar products
General description
NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5350Z.
Features
● Low collector-emitter saturation voltage
● High collector current capability: IC and ICM
● High collector current gain (hFE ) at high IC
● Higher efficiency leading to less heat generation
● Reduced PCB area requirements compared to DPAK.
Applications
● Power management
❍ DC/DC converters
❍ Supply line switching
❍ Battery charger
❍ Linear voltage regulation (LDO).
● Peripheral drivers
❍ Driver in low supply voltage applications, e.g. lamps, LEDs
❍ Inductive load driver, e.g. relays, buzzers, motors.
AN10116_2: Breakthrough In Small Signal - Low VCEsat (BISS) Transistors and their Applications (date
05-Aug-02)
file:///G|/imaging/BITTING/CPL/20030424/04232003_9/PHGL/_HTML04232003/PBSS4350Z.html (1 of 3) [May-06-2003 6:16:11 PM]
Submit Query
Philips Semiconductors - PIP - PBSS4350Z; 50 V low VCEsat NPN transistor
Datasheet
Type number Title Publication release
date Datasheet status Page
count File
size
(kB)
Datasheet
PBSS4350Z 50 V low VCEsat
NPN transistor 1/20/2003 Product specification 12 83
Download
PDF
File
Download
Parametrics
Type
number Package POLARITY IC
max(mA) VCEO
max(V) Ptot
max(mW) Complement IC
(AV)(mA) VCesat(mV)
PBSS4350Z SOT223
(SC-73) NPN 5000 50 2000 PBSS5350Z 3000
290@IC=2000mA
/ IB=200mA
170@IC=1000mA
/ IB=50mA
Products, packages, availability and ordering
Type
number North
American
type
number
Ordering code
(12NC) Marking/Packing
Download
PDF
File
Discretes packing
info
Package Device status Buy online
PBSS4350Z PBSS4350Z
/T3 9340 565 26135 Standard Marking *
Reel Pack, SMD,
Large
SOT223
(SC-73) Full production
order this
product
online
-
Similar products
Products
similar
to
PBSS4350Z
PBSS4350Z links to the similar products page containing an overview of products that are similar in
function or related to the type number(s) as listed on this page. The similar products page includes products from
the same catalog tree(s), relevant selection guides and products from the same functional category.
Support & tools
Breakthrough in Small-Signal; Low VCEsat (BISS) transistors(date 10-Apr-03)
Download
PDF
File
Letter Symbols - Transistors General(date 01-May-99)
Email/translate this product information
● Email this product information.
● Translate this product information page from English to:
The English language is the official language used at the semiconductors.philips.com website and webpages. All
translations on this website are created through the use of Google Language Tools and are provided for
convenience purposes only. No rights can be derived from any translation on this website.
file:///G|/imaging/BITTING/CPL/20030424/04232003_9/PHGL/_HTML04232003/PBSS4350Z.html (2 of 3) [May-06-2003 6:16:11 PM]
French
Translate
Philips Semiconductors - PIP - PBSS4350Z; 50 V low VCEsat NPN transistor
About this Web Site
| Copyright © 2003 Koninklijke Philips N.V. All rights reserved. | Privacy Policy |
| Koninklijke Philips N.V. | Access to and use of this Web Site is subject to the following Terms of Use. |
file:///G|/imaging/BITTING/CPL/20030424/04232003_9/PHGL/_HTML04232003/PBSS4350Z.html (3 of 3) [May-06-2003 6:16:11 PM]