MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N6036 Features * This device is designed for general purpose amplifier and low-speed switching applications. PNP Darlington Power Transistor Maximum Ratings* Symbol V CEO V CBO V EBO IC IB TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Peak Base Current Operating Junction Temperature Storage Temperature Rating 80 80 5.0 4.0 8.0 100 -55 to +150 -55 to +150 Unit V V V Max 40 0.32 1.5 0.012 3.12 83.3 Unit W W/OC W W/OC O C/W O C/W A mA O C O C A K D R E B Thermal Characteristics Symbol PD PD RJ C RJA Rating Total Device Dissipation Derate above 25OC Total Device Dissipation Derate above 25OC Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient G Parameter Min Max Units 80 --- Vdc --- 100 uAdc ----- 100 500 uA mA --- 0.5 mAdc --- 2.0 mAdc C 1 2 J 3 J OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) (IC=100mAdc, IE =0) ICEO Collector Cutoff Current (VCB=60Vdc, IE =0) ICEX Collector Cutoff Current (VCE=80Vdc, VEB(off)=1.5Vdc) (VCE=80Vdc, V EB(off)=1.5Vdc, TC=125 OC) ICBO Collector-Cutoff Current (V CB=80Vdc, IE =0) IEBO Emitter Cutoff Current (VEB =5.0Vdc, IC=0) *Indicates JEDEC Registered Data P L H Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol N M F VCEO(sus) PIN 1. PIN 2. PIN 3. Q EMITTER COLLECTOR BASE ! www.mccsemi.com Revision: 2 2003/04/30 MCC 2N6036 Symbol Parameter Min Max 500 750 100 --15000 --- --- 2.0 3.0 --- 4.0 --- 2.8 25 --- --- 200 Units DYNAMIC CHARACTERISTICS hFE DC Current Gain (V CE=3.0Vdc, IC=0.5Adc) (V CE=3.0Vdc, IC=2.0Adc) (V CE=3.0Vdc, IC=4.0Adc) Collector-Emitter Saturation Voltage (IC=2.0Adc, IB =8.0mA dc) (IC=4.0Adc, IB =40mAdc) Base-Emitter Saturation Voltage (IC=4.0Adc, IB =40mAdc) Base-Emitter On Voltage (IC=2.0Adc, VCE=3.0Vdc) VCE(sat) VBE(sat) VBE(on) --- Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Small-Signal Current-Gain (IC=0.75Adc, V CE=10Vdc, f=1.0MHz ) Output Capacitance (V CB=10Vdc, IE =0, f=0.1MHz) |hfe| Cob TC 2.0 20 1.0 10 0 TC = 25C 100 3.0 30 0 pF 200 C, CAPACITANCE (pF) PD, POWER DISSIPATION (WATTS) TA TC 4.0 40 --- 20 40 60 80 100 T, TEMPERATURE (C) 50 Cob 30 Cib 20 TA 0 70 120 140 160 10 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 Figure 2. Capacitance Figure 1. Power Derating www.mccsemi.com Revision: 2 2003/04/30 MCC 2N6036 6.0 k 6.0 k 4.0 k 3.0 k 25C 2.0 k -55C 1.0 k 800 600 400 300 0.04 0.06 0.1 0.2 1.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 3.0 k 25C 2.0 k -55C 1.0 k 800 600 400 300 0.04 0.06 4.0 2.0 VCE = 3.0 V TJ = 125C 4.0 k hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 3.0 V TC = 125C 0.1 0.2 1.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 3.4 TJ = 25C 3.0 IC = 0.5 A 2.6 1.0 A 2.2 2.0 A 4.0 A 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA) 20 100 50 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 3.4 3.0 2.6 IC = 0.5 A TJ = 25C 1.0 A 4.0 A 2.0 A 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 10 5.0 IB, BASE CURRENT (mA) 20 50 100 Figure 4. Collector Saturation Region 2.2 2.2 TJ = 25C TJ = 25C 1.4 1.8 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 0.2 0.04 0.06 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.8 1.4 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.2 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 5. "On" Voltages www.mccsemi.com Revision: 2 2003/04/30