DSP25-12A Standard Rectifier VRRM = 2x 1200 V I FAV = 25 A VF = 1.16 V Phase leg Part number DSP25-12A Backside: anode/cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 Planar passivated chips Very low leakage current Very low forward voltage drop Improved thermal behaviour Diode for main rectification For single and three phase bridge configurations Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20121218a DSP25-12A Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1200 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case typ. VR = 1200 V TVJ = 25C 40 A VR = 1200 V TVJ = 150C 1.5 mA TVJ = 25C 1.23 V 1.47 V 1.16 V IF = forward voltage drop min. 25 A IF = 50 A IF = 25 A IF = 50 A TVJ = 150 C TC = 135C 1.50 V T VJ = 175 C 25 A TVJ = 175 C 0.81 V 180 sine for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved 13.8 m 0.9 K/W K/W 0.25 TC = 25C 160 W t = 10 ms; (50 Hz), sine TVJ = 45C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 325 A t = 10 ms; (50 Hz), sine TVJ = 150 C 255 A t = 8,3 ms; (60 Hz), sine VR = 0 V 275 A t = 10 ms; (50 Hz), sine TVJ = 45C 450 As t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 440 As TVJ = 150 C 325 As 315 As t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 10 pF 20121218a DSP25-12A Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 70 Unit A -55 150 C -40 175 C Weight 6 MD mounting torque FC mounting force with clip g 0.8 1.2 Nm 20 120 N Product Marking Logo Part Number DateCode Assembly Code abcdef YYWWZ 000000 Assembly Line Ordering Standard Part Number DSP25-12A Similar Part DSP25-12AT DSP25-16A DSP25-16AR DSP25-16AT Equivalent Circuits for Simulation I V0 R0 Marking on Product DSP25-12A Package TO-268AA (D3Pak) (2) TO-247AD (3) ISOPLUS247 (3) TO-268AA (D3Pak) (2) * on die level Delivery Mode Tube Code No. 463604 Voltage class 1200 1600 1600 1600 T VJ = 175C Rectifier V 0 max threshold voltage 0.81 V R 0 max slope resistance * 11.2 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20121218a DSP25-12A Outlines TO-247 A E A2 O P1 OP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 b4 3x b C A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 OP Q S b b2 b4 c D1 D2 E1 O P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20121218a DSP25-12A Rectifier 60 300 10 3 50 Hz, 80% VRRM VR = 0 V 50 TVJ = 45C IFSM 40 IF 2 It TVJ = 45C 30 [A2s] [A] [A] TVJ = 150C 10 2 200 20 TVJ = 150C TVJ = 125C 10 TVJ = 25C 0 0.5 1.0 100 0.001 1.5 10 1 0.01 0.1 1 1 2 3 4 5 6 7 8 91 0 VF [V] t [s] t [ms] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I t versus time per diode 40 RthJA: 0.6 KW 0.8 KW 1 KW 2 KW 4 KW 8 KW 30 Ptot DC = 1 0.5 0.4 0.33 0.17 0.08 20 [W] 10 2 80 DC = 1 0.5 0.4 0.33 0.17 0.08 60 IF(AV)M 40 [A] 20 0 0 0 5 10 15 20 25 30 0 IF(AV)M [A] 50 100 150 200 0 50 100 150 200 TC [C] Tamb [C] Fig. 5 Max. forward current vs. case temperature Fig. 4 Power dissipation vs. direct output current and ambient temperature 1.0 0.8 ZthJ Constants for ZthJC calculation: 0.6 [K/W] i Rthi (K/W) 0.4 1 0.03 0.0004 2 0.08 0.002 3 0.2 0.003 4 0.39 0.03 5 0.2 0.29 0.2 0.0 1 10 100 1000 ti (s) 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20121218a